NGTB40N60FLWG [ONSEMI]
IGBT 600V 40A FS1 太阳能/UPS;
| 型号： | NGTB40N60FLWG |
| 厂家： | 
ONSEMI |
| 描述： | IGBT 600V 40A FS1 太阳能/UPS 栅 双极性晶体管 |
| 文件： | 总9页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
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Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
40 A, 600 V
CEsat = 1.85 V
V
C
• These are Pb−Free Devices
Typical Applications
G
• Solar Inverters
• Uninterruptable Power Supply (UPS)
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Collector−emitter voltage
V
CES
600
Collector current
@ TC = 25°C
I
C
A
80
40
@ TC = 100°C
G
TO−247
CASE 340L
STYLE 4
C
Pulsed collector current, T
I
160
A
A
pulse
CM
E
limited by T
Jmax
Diode Forward Current
I
F
@ T = 25°C
80
40
C
@ T = 100°C
C
MARKING DIAGRAM
Diode Pulsed Current
I
t
160
A
FM
T
Limited by T
pulse
Jmax
Short−circuit withstand time
5
ms
SC
V
J
= 15 V, V = 300 V,
GE
CE
T ≤ +150°C
40N60FL
AYWWG
Gate−emitter voltage
V
GE
$20
$30
V
Transient Gate Emitter Voltage
(t = 5 ms, D < 0.010)
p
Power Dissipation
@ TC = 25°C
P
W
°C
D
257
102
@ TC = 100°C
Operating junction temperature
range
T
−55 to +150
J
A
Y
= Assembly Location
= Year
Storage temperature range
T
−55 to +150
°C
°C
WW
G
= Work Week
= Pb−Free Package
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NGTB40N60FLWG
Package
Shipping
TO−247
30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
July, 2013 − Rev. 0
NGTB40N60FLW/D
NGTB40N60FLWG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.470
1.06
40
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
q
JC
q
JA
R
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
600
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 40 A
V
CEsat
1.6
−
1.85
2.3
2.1
−
GE
C
V
GE
= 15 V, I = 40 A, T = 150°C
C
J
Gate−emitter threshold voltage
V
V
= V , I = 200 mA
V
4.5
5.5
6.5
V
GE
CE
C
GE(th)
Collector−emitter cut−off current, gate−
emitter short−circuited
= 0 V, V = 600 V
I
−
−
−
−
0.2
2
mA
GE
CE
CES
V
GE
= 0 V, V = 600 V, T = 150°C
CE J
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
100
nA
pF
GE
CE
GES
DYNAMIC CHARACTERISTIC
Input capacitance
C
−
−
−
−
−
−
4200
170
110
171
36
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
Q
nC
ns
g
Gate to emitter charge
Q
V
CE
= 480 V, I = 40 A, V = 15 V
ge
gc
C
GE
Q
83
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
85
37
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
174
73
d(off)
T = 25°C
J
V
= 400 V, I = 40 A
C
CC
Fall time
t
f
R = 10 W
GE
g
V
= 0 V/ 15 V
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
0.89
0.44
1.33
82
mJ
ns
on
off
E
ts
t
t
d(on)
t
r
38
Turn−off delay time
179
95
d(off)
T = 150°C
J
V
= 400 V, I = 40 A
C
CC
Fall time
t
f
R = 10 W
GE
g
V
= 0 V/ 15 V
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
1.10
0.84
1.94
mJ
on
off
E
ts
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2
NGTB40N60FLWG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
DIODE CHARACTERISTIC
Forward voltage
Test Conditions
Symbol
Min
Typ
Max
Unit
V
= 0 V, I = 40 A
V
F
1.55
−
2.2
2.3
2.60
−
V
GE
F
V
GE
= 0 V, I = 40 A, T = 150°C
F
J
Reverse recovery time
Reverse recovery charge
Reverse recovery current
t
−
−
−
77
0.35
7
−
−
−
ns
mC
A
rr
T = 25°C
J
I = 40 A, V = 200 V
Q
rr
F
R
di /dt = 200 A/ms
F
I
rrm
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3
NGTB40N60FLWG
TYPICAL CHARACTERISTICS
200
180
180
V
GE
= 17 V to 13 V
T = 150°C
J
T = 25°C
J
V
GE
= 17 V to 13 V
160
140
120
100
80
160
140
120
100
80
11 V
11 V
10 V
9 V
60
10 V
9 V
60
40
40
20
20
8 V
7 V
7 V
6
8 V
0
0
0
1
2
3
4
5
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
140
120
100
80
180
160
140
120
100
80
V
GE
= 17 V to 13 V
T = −55°C
J
T = 25°C
J
T = 150°C
J
11 V
60
60
10 V
9 V
40
40
20
20
7 V to 8 V
0
0
0
4
8
12
16
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.0
2.5
2.0
1.5
1.0
10,000
1000
I
= 60 A
C
C
ies
I
C
= 40 A
I
C
= 20 A
I
= 5 A
C
C
oes
100
10
C
res
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
20
40
60
80
100
T , JUNCTION TEMPERATURE (°C)
J
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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4
NGTB40N60FLWG
TYPICAL CHARACTERISTICS
20
70
60
50
40
30
20
10
0
V
CE
= 480 V
15
T = 25°C
J
10
T = 150°C
J
5
0
V
V
= 400 V
= 15 V
CE
GE
I
C
= 40 A
0
0
5
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125 150
175 200
V , FORWARD VOLTAGE (V)
Q , GATE CHARGE (nC)
F
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
1.4
1.2
1
1000
100
E
on
t
d(off)
t
d(on)
E
off
t
f
0.8
0.6
0.4
0.2
0
t
r
10
1
V
CE
= 400 V
= 15 V
= 40 A
V
V
I
= 400 V
= 15 V
V
I
CE
GE
GE
C
= 40 A
Rg = 10 W
C
Rg = 10 W
20 40 60
T , JUNCTION TEMPERATURE (°C)
20
40 60
80 100 120 140 160 180 200
0
80 100 120 140 160 180 200
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
2.5
2
1000
100
V
V
= 400 V
= 15 V
T = 150°C
CE
GE
E
on
t
t
d(off)
J
Rg = 10 W
t
f
1.5
1
d(on)
E
off
t
r
10
1
V
V
= 400 V
= 15 V
CE
0.5
0
GE
T = 150°C
J
Rg = 10 W
20
35
50
65
80
5
20
35
50
65
80
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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5
NGTB40N60FLWG
TYPICAL CHARACTERISTICS
4.5
4
1000
V
V
= 400 V
= 15 V
= 40 A
CE
t
t
d(off)
GE
d(on)
I
C
3.5
3
E
on
T = 150°C
J
t
f
100
t
r
2.5
2
E
off
1.5
1
10
1
V
V
= 400 V
= 15 V
CE
GE
I
C
= 40 A
0.5
0
T = 150°C
J
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
2.4
1000
100
V
= 15 V
= 40 A
GE
I
C
Rg = 10 W
T = 150°C
J
t
d(off)
E
1.8
1.2
0.6
0
on
t
f
t
d(on)
t
r
E
off
10
1
V
GE
= 15 V
I
C
= 40 A
Rg = 10 W
T = 150°C
J
175 225
275
325
375
425
475
525
575
175 225
275
325
375 425 475
525
575
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
1000
100
100 ms
50 ms
1 ms
dc operation
10
1
Single Nonrepetitive
Pulse T = 25°C
Curves must be derated
linearly with increase
in temperature
10
1
C
0.1
V
GE
= 15 V, T = 125°C
C
0.01
1
10
100
1000
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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6
NGTB40N60FLWG
TYPICAL CHARACTERISTICS
1
0.1
R
= 0.470
q
JC
50% Duty Cycle
20%
R (°C/W)
t (sec)
i
i
0.007192 0.000139
0.000100 0.031623
0.010280 0.000973
0.010881 0.002906
0.033233
10%
5%
Duty Factor = t /t
1
2
Peak T = P
x Z
+ T
JC C
q
J
DM
0.003009
2%
R
C
R
R
n
0.015465
10.0000
0.076534
0.361892
316.228
0.020448
0.000100
0.041319
0.027633
0.000100
0.309198
0.01
Junction
C = t /R
Case
1
1
2
i
i
i
Single Pulse
C
C
n
0.323417
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
1
R
= 1.06
q
JC
50% Duty Cycle
20%
R
C
R
C
R
n
Junction
R (°C/W) t (sec)
Case
1
1
2
2
i
i
0.1
0.20043
0.42428
0.51036
0.34767
0.11135
1.48E−4
0.002
0.03
0.1
10%
5%
2%
1%
C = t /R
i
i
i
0.01
0.001
C
n
2.0
Duty Factor = t /t
1
2
Single Pulse
0.00001 0.0001
Peak T = P
x Z
+ T
JC
q
J
DM
C
0.000001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
Figure 21. Test Circuit for Switching Characteristics
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
STYLE 1:
PIN 1. GATE
STYLE 2:
PIN 1. ANODE
2. CATHODE (S)
STYLE 3:
PIN 1. BASE
2. COLLECTOR
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
A
Y
= Assembly Location
= Year
2. DRAIN
3. SOURCE
4. DRAIN
3. ANODE 2
4. CATHODES (S)
3. EMITTER
4. COLLECTOR
4. COLLECTOR
WW
G
= Work Week
= Pb−Free Package
STYLE 5:
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
4. ANODE
4. MAIN TERMINAL 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15080C
TO−247
PAGE 1 OF 1
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