NGTG12N60TF1G [ONSEMI]
IGBT, N-Channel, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L;
| 型号： | NGTG12N60TF1G |
| 厂家： | 
ONSEMI |
| 描述： | IGBT, N-Channel, 600V, 12A, VCE(sat)=1.4V, TO-3PF-3L 双极性晶体管 |
| 文件： | 总7页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA2219
NGTG12N60TF1G
N-Channel IGBT
600V, 12A, V (sat);1.4V TO-3PF-3L
CE
http://onsemi.com
Features
• V (sat)=1.4V typ. (I =12A, V =15V)
CE GE
C
• Low switching loss in higher frequency applications
• Enhansment type
• 5μs short circuit capability
• Adoption of full isolation type package
TO-3PF-3L
Applications
• Power factor correction of white goods appliance
• General purpose inverter
Specifications
Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Symbol
Conditions
Ratings
Unit
V
V
CES
600
20
V
GES
V
@ Tc=25°C *2
@ Tc=100°C *2
24
A
1
Collector Current (DC)
I
I
*
Limited by Tjmax
C
12
A
Collector Current (Pulse)
Allowable Power Dissipation
Junction Temperature
Pulse width Limited by Tjmax(Ref:ASO graph)
88
A
CP
P
Tc=25°C (Our ideal heat dissipation condition) *2
54
W
°C
°C
D
Tj
150
Storage Temperature
Tstg
- 55 to +150
Note : *1 Collector Current is calculated from the following formula.
Tjmax - Tc
I (Tc)=
C
R
th
(j-c)
×
V
(sat)max.(Tjmax, I (Tc))
CE C
*2 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C, Unless otherwise specified
Ratings
Parameter
Symbol
Conditions
Unit
min
600
typ
max
Collector to Emitter Breakdown Voltage
Collector to Emitter Cut off Current
V(
)
I
=500μA, V =0V
GE
V
μA
mA
nA
V
BR CES
C
Tc=25°C
10
I
I
V
=600V, V =0V
GE
CES
CE
Tc=125°C
1
100
6.5
1.6
Gate to Emitter Leakage Current
Gate to Emitter Threshold Voltage
V
V
= 20V, V
=0V
GES
GE
CE
V
(th)
GE
=20V, I =250μA
4.5
CE
C
Tc=25°C
1.4
V
Collector to Emitter Saturation Voltage
V
(
)
V
=15V, I =12A
C
CE sat
GE
Tc=125°C
1.6
2000
60
V
Input Capacitance
Cies
Coes
Cres
pF
pF
pF
Output Capacitance
V
=20V,f=1MHz
CE
Reverse Transfer Capacitance
50
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
Semiconductor Components Industries, LLC, 2013
October, 2013
O0213 TKIM TC-00003040 No.A2219-1/7
NGTG12N60TF1G
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
t (on)
55
ns
ns
ns
ns
ns
ns
nC
nC
nC
d
V
=300V,I =15A
C
=30Ω,L=200μH
CC
t
30
r
R
G
Turn-ON Time
ton
t (off)
330
200
110
350
84
V
GE
=0V/15V
Turn-OFF Delay Time
Fall Time
d
Vclamp=400V
t
f
See Fig.1, See Fig.2
Turn-OFF Time
toff
Total Gate Charge
Gate to Emitter Charge
Gate to Collector “Miller” Charge
Qg
Qge
Qgc
V
CE
=300V, V =15V, I =15A
GE
16
C
37
Thermal Characteristics at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Ratings
Unit
Thermal Resistance (junction- Case)
Rth(j-c)
Rth(j-a)
Tc=25
°
C (our ideal heat dissipation condition)*2
2.33
47.5
°C /W
°C /W
Thermal Resistance (junction- atmosphere)
No.A2219-2/7
NGTG12N60TF1G
No.A2219-3/7
NGTG12N60TF1G
No.A2219-4/7
NGTG12N60TF1G
No.A2219-5/7
NGTG12N60TF1G
Package Dimensions
NGTG12N60TF1G
TO-3PF-3L
CASE 340AH
ISSUE O
Unit : mm
1: Gate
2: Collector
3: Emitter
Electrical Connection
2
1
3
No.A2219-6/7
NGTG12N60TF1G
Ordering & Package Information
Marking
Shipping
note
Device
Package
TO-3PF-3L
SC-94
30
Pb-Free
NGTG12N60TF1G
pcs. / tube
GTG12N
LOT No.
60
Fig.1 Switching Time Test Circuit
Fig.2 Timing Chart
Clamp Di
V
GE
90%
10%
0
200mH
DUT
I
C
90%
90%
V
CC
R
G
10%
10%
10%
10%
V
CE
0
t
t
r
f
NGTG12N60TF1G
t (off)
d
t (on)
d
t
t
on
off
IT16383
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PS No.A2219-7/7
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