NHPD660T4G [ONSEMI]
Switch Mode Power Rectifier;
| 型号： | NHPD660T4G |
| 厂家： | 
ONSEMI |
| 描述： | Switch Mode Power Rectifier |
| 文件： | 总5页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NHPD660, NRVHPD660
Switch Mode
Power Rectifier
DPAK Surface Mount Package
www.onsemi.com
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
PLANAR ULTRAFAST RECTIFIER
6.0 AMPERES, 600 VOLTS
Features
• Ultrafast 30 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• High Voltage Capability of 600 V
• Low Forward Drop
• Low Leakage Specified @ 125°C Case Temperature
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
DPAK
CASE 369C
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
4
3
Compliant
Mechanical Characteristics
MARKING DIAGRAM
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AYWW
NHP
D660T
• Lead and Mounting Surface Temperature for Soldering Purposes:
A
Y
= Assembly Location
= Year
260°C Max. for 10 Seconds
• ESD Ratings:
WW = Work Week
G
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8 kV)
= Pb−Free Package
ORDERING INFORMATION
Applications
†
• Boost Rectifier for SMPS PFC Operating in Continuous Conduction
Mode (CCM)
Device
Package
Shipping
NHPD660T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
16 mm
• LED Lighting Power Conversion
• Automotive Diesel Piezo Injection
• Thin and Ultra Thin Flat Panel Display
NRVHPD660T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
16 mm
• Output Rectification in High Frequency High Output Voltage
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Applications
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
December, 2014 − Rev. 0
NHPD660/D
NHPD660, NRVHPD660
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
600
V
RRM
V
RWM
V
R
Average Rectified Forward Current
I
A
A
F(AV)
(Rated V , T = 145°C)
6.0
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz, T = 135°C)
12.0
R
C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
I
A
FSM
60
Operating Junction and Storage Temperature Range
T , T
−65 to +175
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance − Junction−to−Case
Symbol
Value
4.2
Unit
°C/W
°C/W
R
q
JC
JA
Thermal Resistance − Junction−to−Ambient (Note 1)
R
95.7
q
1. Rating applies when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage
(Note 2)
(i = 6 A, T = 125°C)
v
1.45
2.4
1.8
3.0
V
F
C
F
(i = 6 A, T = 25°C)
F
C
Instantaneous Reverse Current
(Note 2)
(Rated DC Voltage, T = 125°C)
i
35
0.035
300
30
mA
ns
C
R
(Rated DC Voltage, T = 25°C)
C
Reverse Recovery Time
(I = 0.5 A, I = 0.25 A, I = 1 A)
t
−
−
30
50
F
rr
R
rr
(I = 1 A, dI /dt = −50 A/ms, V = 30 V)
F
F
R
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
(I = 6 A, d /d = −200 A/ms, T = 25°C)
t
30
2.3
37
2
50
3
50
−
ns
A
nC
−
F
IF
t
C
rr
I
RM
Q
S
rr
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
(I = 6 A, d /d = −200 A/ms, T = 125°C)
t
rr
45
5.5
150
0.35
−
−
−
−
ns
A
nC
−
F
IF
t
C
I
RM
Q
rr
S
Forward Recovery Time
Forward Voltage Time
(I = 6 A, d /d = 120 A/ms, T = 25°C)
t
fr
−
−
200
6
ns
V
F
IF
t
C
V
FP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NHPD660, NRVHPD660
TYPICAL CHARACTERISTICS
100
10
1
100
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 150°C
A
10
1
T = 125°C
A
T = 125°C
A
0.1
0.1
T = 25°C
A
T = 25°C
A
0.01
0.01
T = −40°C
T = −40°C
A
A
0.001
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V , INSTANTANEOUS FORWARD VOLTAGE (V)
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
T = 175°C
A
T = 125°C
A
T = 125°C
A
T = 150°C
T = 175°C
A
A
T = 150°C
A
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
1.E−11
1.E−12
0
100
200
300
400
500
600
100
200
300
400
500
600
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
12
11
10
9
1000
T = 25°C
J
DC
8
Square Wave
7
100
6
5
4
3
2
R
= 4.2°C/W
1
0
q
JC
10
0
20 40 60 80 100 120 140 160 180 200
20
40
60
80 100 120 140 160 180
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NHPD660, NRVHPD660
TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
35
35
30
25
20
15
10
I
/I
= 20
I /I = 10
PK AV
T = 175°C
PK AV
J
T
rr
30
I
/I = 5
PK AV
25
20
15
10
V = 30 V
r
d /d = 50 A/ms
i
t
dc
Q
rr
Square Wave
0.5
0
5
0
5
0
0
0.5
1.0
1.5
2.0
0
1
2
3
4
5
6
7
8
I , AVERAGE FORWARD CURRENT (A)
F(AV)
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
Figure 8. Typical Recovery Characteristics
100
50% (DUTY CYCLE)
20%
10%
5.0%
10
1
2.0%
1.0%
0.1
0.01
SINGLE PULSE
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 9. Thermal Response
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4
NHPD660, NRVHPD660
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
ROTATED 905 CW
L3 0.035 0.050
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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NHPD660/D
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