NJW21193G [ONSEMI]
Silicon Power Transistors; 硅功率晶体管
| 型号： | NJW21193G |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Power Transistors |
| 文件： | 总7页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NJW21193G (PNP)
NJW21194G (NPN)
Preferred Devices
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
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Features
•ꢀTotal Harmonic Distortion Characterized
•ꢀHigh DC Current Gain -
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
h
= 20 Min @ I = 8 Adc
C
FE
•ꢀExcellent Gain Linearity
•ꢀHigh SOA: 2.25 A, 80 V, 1 Second
•ꢀThese are Pb-Free Devices
MARKING
DIAGRAM
MAXIMUM RATINGS
Rating
Symbol
Value
250
400
5.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage - 1.5 V
V
CEO
V
CBO
NJW2119xG
AYWW
TO-3P
CASE 340AB
V
EBO
V
CEX
400
Collector Current - Continuous
Collector Current - Peak (Note 1)
I
C
16
30
Base Current - Continuous
I
B
5.0
Adc
Total Power Dissipation @ T = 25°C
Derate Above 25°C
P
D
200
1.6
W
W/°C
C
x
= 3 or 4
G
= Pb-Free Package
= Assembly Location
= Year
Operating and Storage Junction
Temperature Range
T , T
J
-ā 65 to
+150
°C
stg
A
Y
WW
THERMAL CHARACTERISTICS
Characteristic
= Work Week
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Case
R
q
JC
0.625
°C/W
ORDERING INFORMATION
Device
Package
Shipping
Thermal Resistance,
Junction-to-Ambient
R
40
°C/W
q
JA
NJW21193G
TO-3P
(Pb-Free)
30 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
NJW21194G
TO-3P
(Pb-Free)
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
©ꢀ Semiconductor Components Industries, LLC, 2008
January, 2008 - Rev. 0
1
Publication Order Number:
NJW21193/D
NJW21193G (PNP) NJW21194G (NPN)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(I = 100 mAdc, I = 0)
V
250
-
-
-
-
-
-
Vdc
CEO(sus)
C
B
Collector Cutoff Current
(V = 200 Vdc, I = 0)
I
100
100
100
mAdc
mAdc
mAdc
CEO
CE
B
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
I
-
EBO
CE
C
Collector Cutoff Current
(V = 250 Vdc, V
I
-
CEX
= 1.5 Vdc)
BE(off)
CE
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V = 50 Vdc, t = 1 s (non-repetitive)
I
Adc
S/b
4.0
ꢀꢀ2.25
-
-
-
-
CE
(V = 80 Vdc, t = 1 s (non-repetitive)
CE
ON CHARACTERISTICS
DC Current Gain
(I = 8 Adc, V = 5 Vdc)
h
FE
20
8
-
-
80
-
C
CE
(I = 16 Adc, I = 5 Adc)
C
B
Base-Emitter On Voltage
(I = 8 Adc, V = 5 Vdc)
V
-
-
2.2
Vdc
Vdc
BE(on)
C
CE
Collector-Emitter Saturation Voltage
(I = 8 Adc, I = 0.8 Adc)
(I = 16 Adc, I = 3.2 Adc)
V
CE(sat)
-
-
-
-
1.4
4
C
B
C
B
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
ꢁV = 28.3 V, f = 1 kHz, P
T
%
HD
= 100 W
h
FE
unmatched
RMS
LOAD
RMS
-
0.8
-
ꢁ(Matched pair h = 50 @ 5 A/5 V)
FE
h
FE
matched
-
4
0.08
-
-
-
Current Gain Bandwidth Product
f
MHz
pF
T
(I = 1 Adc, V = 10 Vdc, f = 1 MHz)
test
C
CE
Output Capacitance
(V = 10 Vdc, I = 0, f = 1 MHz)
test
C
-
-
500
ob
CB
E
PNP NJW21193G
NPN NJW21194G
6.5
8.0
V
CE
= 10 V
6.0
5.5
5.0
4.5
7.0
6.0
5.0
4.0
10 V
5 V
V
CE
= 5 V
3.0
2.0
1.0
4.0
3.5
T = 25°C
test
T = 25°C
J
test
J
f
= 1 MHz
f
= 1 MHz
3.0
0
0.1
1.0
10
0.1
1.0
I COLLECTOR CURRENT (AMPS)
10
I COLLECTOR CURRENT (AMPS)
C
C
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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2
NJW21193G (PNP) NJW21194G (NPN)
TYPICAL CHARACTERISTICS
PNP NJW21193G
NPN NJW21194G
1000
100
10
1000
100
10
T = 100°C
J
T = 100°C
J
25°C
25°C
-ꢁ25°C
-ꢁ25°C
V
CE
= 20 V
V
CE
= 20 V
0.1
1.0
10
100
0.1
1.0
10
100
I COLLECTOR CURRENT (AMPS)
C
I COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain, VCE = 20 V
PNP NJW21193G
Figure 4. DC Current Gain, VCE = 20 V
NPN NJW21194G
1000
100
10
1000
100
10
T = 100°C
J
T = 100°C
J
25°C
25°C
-ꢁ25°C
-ꢁ25°C
V
CE
= 5 V
V
CE
= 20 V
0.1
1.0
10
100
0.1
1.0
10
100
I COLLECTOR CURRENT (AMPS)
C
I COLLECTOR CURRENT (AMPS)
C
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
NPN NJW21194G
PNP NJW21193G
30
35
I = 2 A
B
1.5 A
I = 2 A
B
30
25
20
25
20
1.5 A
1 A
1 A
15
10
0.5 A
15
10
0.5 A
5.0
0
5.0
T = 25°C
J
T = 25°C
J
0
0
5.0
10
15
20
25
0
5.0
10
15
20
25
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
CE
Figure 7. Typical Output Characteristics
Figure 8. Typical Output Characteristics
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3
NJW21193G (PNP) NJW21194G (NPN)
TYPICAL CHARACTERISTICS
PNP NJW21193G
NPN NJW21194G
3.0
2.5
1.4
1.2
T = 25°C
J
I /I = 10
T = 25°C
J
I /I = 10
C
B
C
B
1.0
0.8
2.0
1.5
1.0
V
BE(sat)
0.6
0.4
V
BE(sat)
0.5
0
0.2
0
V
CE(sat)
V
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 9. Typical Saturation Voltages
PNP NJW21193G
Figure 10. Typical Saturation Voltages
NPN NJW21194G
10
10
1.0
0.1
T = 25°C
J
T = 25°C
J
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
100
0.1
1.0
10
100
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base-Emitter Voltage
PNP NJW21193G
Figure 12. Typical Base-Emitter Voltage
NPN NJW21194G
100
10
100
10
10 mSec
10 mSec
100 mSec
100 mSec
1 Sec
1 Sec
1.0
0.1
1.0
0.1
1.0
10
100
1000
1.0
10
V , COLLECTOR EMITTER (VOLTS)
CE
100
1000
V
CE
, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
Figure 14. Active Region Safe Operating Area
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4
NJW21193G (PNP) NJW21194G (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I - V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on T
= 150°C; T is
J(pk)
C
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
C
CE
10000
10000
T = 25°C
C
T = 25°C
C
C
ib
C
ib
1000
1000
100
C
ob
C
ob
f
= 1 MHz)
(test)
f
= 1 MHz)
(test)
100
0.1
1.0
10
100
0.1
1.0
10
100
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. NJW21193G Typical Capacitance
Figure 16. NJW21194G Typical Capacitance
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 17. Typical Total Harmonic Distortion
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5
NJW21193G (PNP) NJW21194G (NPN)
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
50 W
SOURCE
AMPLIFIER
DUT
ANALYZER
0.5 W
0.5 W
8.0 W
DUT
-50 V
Figure 18. Total Harmonic Distortion Test Circuit
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6
NJW21193G (PNP) NJW21194G (NPN)
PACKAGE DIMENSIONS
TO-3P-3LD
CASE 340AB-01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND 0.30mm
FROM THE TERMINAL TIP.
SEATING
PLANE
A
B
B
C
U
Q
E
4
4. DIMENSION A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
A
K
L
MILLIMETERS
DIM MIN
NOM
MAX
A
B
C
D
E
F
19.70
15.40
4.60
0.80
1.45
1.80
19.90 20.10
15.60 15.80
4.80
1.00
5.00
1.20
1.65
2.20
1.50
2.00
(3°)
P
G
H
J
5.45 BSC
1.40
0.60
1.20
0.55
1.60
0.75
K
L
19.80
18.50
3.30
20.00 20.20
18.70 18.90
1
2
3
F
H
J
P
Q
U
W
3.50
3.20
3.70
3.50
3X D
3.10
W
M
S
A B
0.25
5.00 REF
3.00
2.80
3.20
G
G
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NJW21193/D
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