NLSX4378ABFCT1G [ONSEMI]

Level Translator, 4-Bit, 24 Mbps, Dual-Supply;
NLSX4378ABFCT1G
型号: NLSX4378ABFCT1G
厂家: ONSEMI    ONSEMI
描述:

Level Translator, 4-Bit, 24 Mbps, Dual-Supply

PC 驱动 逻辑集成电路
文件: 总10页 (文件大小:150K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NLSX4378A  
4-Bit 24 Mb/s Dual-Supply  
Level Translator  
The NLSX4378A is a 4−bit configurable dual−supply bidirectional  
auto sensing translator that does not require a directional control pin.  
The V I/O and V I/O ports are designed to track two different  
CC  
L
www.onsemi.com  
MARKING  
power supply rails, V and V respectively. The V and V supply  
CC  
L
CC  
L
rails are configurable from 1.65 V to 5.5 V. This allows voltage logic  
signals on the V side to be translated into lower, higher or equal  
L
DIAGRAM  
value voltage logic signals on the V side, and vice−versa.  
CC  
The NLSX4378A translator has open−drain outputs with  
integrated 10 kW pullup resistors on the I/O lines. The integrated  
S4378AB  
AYWW  
G
mBump12  
FC SUFFIX  
CASE 499AU  
pullup resistors are used to pullup the I/O lines to either V or V  
.
L
CC  
The NLSX4378A is an excellent match for open−drain applications  
2
such as the I C communication bus.  
A
Y
= Assembly Location  
= Year  
Features  
WW = Work Week  
G
= Pb−Free Package  
V can be Less than, Greater than or Equal to V  
L
CC  
Wide V Operating Range: 1.65 V to 5.5 V  
CC  
LOGIC DIAGRAM  
Wide V Operating Range: 1.65 V to 5.5 V  
L
High−Speed with 24 Mb/s Guaranteed Date Rate  
Low Bit−to−Bit Skew  
V
L
V
CC  
GND  
EN  
Enable Input is Overvoltage Tolerant (OVT) to 5.5 V  
Nonpreferential Powerup Sequencing  
I/O V 1  
I/O V  
1
2
3
4
L
CC  
CC  
CC  
CC  
Integrated 10 kW Pullup Resistors  
ESD Protection: >7 kV HBM for all pins  
Small Space Saving Package − 2.02 x 1.54 mm mBump12  
I/O V 2  
I/O V  
I/O V  
I/O V  
L
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
I/O V 3  
L
Typical Applications  
2
I C, SMBus, PMBus  
I/O V 4  
L
Low Voltage ASIC Level Translation  
Mobile Phones, PDAs, Cameras  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2018 − Rev. 0  
NLSX4378A/D  
NLSX4378A  
V
L
V
CC  
One−Shot  
Block  
One−Shot  
Block  
PU1  
PU2  
Gate  
Bias  
R
10 kW  
R
Pullup  
10 kW  
Pullup  
EN  
EN  
I/O V  
I/O V  
CC  
L
N
Figure 1. Block Diagram (1 I/O Line)  
PIN ASSIGNMENT  
Pins  
PIN LOCATION  
Description  
Pin  
A1  
A2  
A3  
A4  
Pin Name  
I/O V 1  
V
V
Input Voltage  
CC  
L
CC  
L
V
V Input Voltage  
L
I/O V 2  
L
GND  
EN  
Ground  
I/O V 3  
L
Output Enable  
I/O VL4  
I/O V  
n
V
I/O Port, Referenced to V  
B1  
B2  
B3  
B4  
C1  
C2  
C3  
C4  
V
CC  
CC  
CC  
CC  
I/O V n  
V I/O Port, Referenced to V  
L
V
L
L
L
EN  
FUNCTION TABLE  
GND  
EN  
L
Operating Mode  
Hi−Z  
I/O V  
1
2
3
4
CC  
CC  
CC  
CC  
I/O V  
I/O V  
I/O V  
H
I/O Buses Connected  
mBump12  
(2.02 x 1.54 mm)  
A
B
C
1
I/O V 1  
V
I/O V  
I/O V  
I/O V  
1
2
L
CC  
CC  
2
3
4
I/O V 2  
V
L
L
CC  
I/O V 3  
EN  
3
4
L
CC  
I/O V 4 GND I/O V  
L
CC  
(Bottom View)  
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2
NLSX4378A  
MAXIMUM RATINGS  
Symbol  
Parameter  
Condition  
Value  
Unit  
V
V
DC Supply Voltage  
DC Supply Voltage  
−0.3 to +7.0  
−0.3 to +7.0  
CC  
L
V
V
I/O V  
I/O V  
V
−Referenced DC Input/Output Voltage  
−0.3 to (V + 0.3)  
V
CC  
CC  
CC  
V −Referenced DC Input/Output Voltage  
L
−0.3 to (V + 0.3)  
V
L
L
V
Enable Control Pin DC Input Voltage  
−0.3 to +7.0  
40  
V
EN  
I
Short−Circuit Duration (I/O V and I/O V to GND)  
Continuous  
mA  
°C  
mA  
V
I/O_SC  
L
CC  
T
STG  
Storage Temperature  
Latch−up Current  
−65 to +150  
100  
I
LU  
ESD Rating  
Human Body Model  
Charged Device Model  
7000  
2000  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
1.65  
1.65  
GND  
GND  
−55  
Max  
5.5  
5.5  
5.5  
Unit  
V
V
CC  
DC Supply Voltage  
V
L
DC Supply Voltage  
V
V
EN  
Enable Control Pin Voltage  
I/O Pin Voltage  
V
V
IO  
V
or V  
L
V
CC  
T
A
Operating Temperature Range  
+125  
°C  
Functionaloperation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the  
RecommendedOperating Ranges limits may affect device reliability.  
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3
NLSX4378A  
DC ELECTRICAL CHARACTERISTICS (V = 1.65 V to 5.5 V and V = 1.65 V to 5.5 V, unless otherwise specified)  
CC  
L
−405C to +855C  
−555C to +1255C  
Typ  
(Notes 1, 2)  
Min  
Max  
Min  
V − 0.4  
CC  
Max  
Symbol  
Parameter  
I/O V Input HIGH Voltage  
Test Conditions  
Unit  
V
V
IHC  
V
− 0.4  
CC  
CC  
V
V
I/O V Input LOW Voltage  
0.15  
0.15  
V
ILC  
CC  
I/O V Input HIGH Voltage  
V − 0.4  
L
V − 0.4  
L
V
IHL  
L
V
ILL  
I/O V Input LOW Voltage  
0.15  
0.15  
V
L
V
IH  
Control Pin Input HIGH  
Voltage  
0.65 * V  
0.65 * V  
V
L
L
V
Control Pin Input LOW  
Voltage  
0.35 * V  
0.35 * V  
V
V
IL  
L
L
V
OHC  
I/O V Output HIGH Voltage I/O V Source Current = 0.8 * V  
0.8 * V  
CC  
CC  
CC  
CC  
20 mA  
V
I/O V Output LOW Voltage  
I/O V Sink Current =  
0.4  
0.4  
V
OLC  
OHL  
CC  
CC  
1.0 mA, I/O_V 0.15 V  
L
V
I/O V Output HIGH Voltage  
I/O V Source Current =  
0.8 * V  
0.8 * V  
L
V
L
L
L
20 mA  
V
I/O V Output LOW Voltage  
I/O V Sink Current =  
0.4  
2.0  
1.0  
1.0  
1.0  
1.0  
0.4  
3.0  
3.0  
1.5  
1.5  
1.0  
V
OLL  
L
L
1.0 mA, I/O_V 0.15 V  
CC  
I
V
CC  
Supply Current  
I/O V and I/O V  
L
0.5  
0.3  
0.1  
0.1  
0.1  
10  
mA  
mA  
mA  
mA  
mA  
kW  
QVCC  
CC  
Unconnected, V = V  
EN  
L
I
V Supply Current  
L
I/O V and I/O V  
CC L  
QVL  
Unconnected, V = V  
EN  
L
I
V
CC  
Tristate Output Mode  
I/O V and I/O V  
CC L  
TS−VCC  
Supply Current  
Unconnected, V = GND  
EN  
I
V Tristate Output Mode  
I/O V and I/O V  
CC L  
TS−VL  
L
Supply Current  
Unconnected, V = GND  
EN  
I
I/O Tristate Output Mode  
Leakage Current  
T = +25°C  
A
OZ  
R
Pullup Resistor I/O V and  
T = +25°C  
A
PU  
L
V
CC  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performancemay not be indicated by the Electrical Characteristics if operated under different conditions.  
1. Typical values are for V = +2.8 V, V = +1.8 V and T = +25°C.  
CC  
L
A
2. All units are production tested at T = +25°C. Limits over the operating temperature range are guaranteed by design.  
A
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4
 
NLSX4378A  
TIMING CHARACTERISTICS − RAIL−TO−RAIL DRIVING CONFIGURATIONS  
(I/O test circuit of Figures 2 and 3, C  
= 15 pF, driver output impedance v 50 W, R  
= 1 MW)  
LOAD  
LOAD  
−405C to +855C  
−555C to +1255C  
(Note 3)  
(Note 3)  
Min  
Typ  
Max  
Min  
Max  
Symbol  
V = 1.65 V, V = 5.5 V  
Parameter  
Test Conditions  
Unit  
L
CC  
t
I/O V Risetime  
15  
30  
30  
10  
20  
20  
5
15  
30  
30  
10  
20  
20  
5
ns  
ns  
RVCC  
CC  
t
I/O V Falltime  
CC  
FVCC  
t
I/O V Risetime  
ns  
RVL  
L
t
I/O V Falltime  
ns  
FVL  
L
t
t
Propagation Delay (Driving I/O V )  
ns  
PDVL−VCC  
PDVCC−VL  
L
Propagation Delay (Driving I/O V  
Channel−to−Channel Skew  
Maximum Data Rate  
)
ns  
CC  
t
nS  
Mb/s  
SKEW  
MDR  
24  
24  
V = 1.8 V, V = 2.8 V  
L
CC  
t
I/O V Risetime  
15  
15  
25  
10  
15  
15  
5
15  
15  
25  
10  
15  
15  
5
ns  
ns  
RVCC  
CC  
t
I/O V Falltime  
CC  
FVCC  
t
I/O V Risetime  
ns  
RVL  
L
t
I/O V Falltime  
ns  
FVL  
L
t
t
Propagation Delay (Driving I/O V )  
ns  
PDVL−VCC  
PDVCC−VL  
L
Propagation Delay (Driving I/O V  
Channel−to−Channel Skew  
Maximum Data Rate  
)
ns  
CC  
t
nS  
Mb/s  
SKEW  
MDR  
24  
24  
24  
24  
V = 2.5 V, V = 3.6 V  
L
CC  
t
I/O V Risetime  
15  
10  
15  
10  
15  
15  
5
15  
10  
15  
10  
15  
15  
5
ns  
ns  
RVCC  
CC  
t
I/O V Falltime  
CC  
FVCC  
t
I/O V Risetime  
ns  
RVL  
L
t
I/O V Falltime  
ns  
FVL  
L
t
t
Propagation Delay (Driving I/O V )  
ns  
PDVL−VCC  
PDVCC−VL  
L
Propagation Delay (Driving I/O V  
Channel−to−Channel Skew  
Maximum Data Rate  
)
ns  
CC  
t
nS  
Mb/s  
SKEW  
MDR  
24  
V = 2.8 V, V = 1.8 V  
L
CC  
t
I/O V Risetime  
25  
10  
15  
15  
15  
15  
5
25  
10  
15  
15  
15  
15  
5
ns  
ns  
RVCC  
CC  
t
I/O V Falltime  
CC  
FVCC  
t
I/O V Risetime  
ns  
RVL  
L
t
I/O V Falltime  
ns  
FVL  
L
t
t
Propagation Delay (Driving I/O V )  
ns  
PDVL−VCC  
PDVCC−VL  
L
Propagation Delay (Driving I/O V  
Channel−to−Channel Skew  
Maximum Data Rate  
)
ns  
CC  
t
nS  
Mb/s  
SKEW  
MDR  
24  
3. Limits over the operating temperature range are guaranteed by design.  
www.onsemi.com  
5
NLSX4378A  
TIMING CHARACTERISTICS − RAIL−TO−RAIL DRIVING CONFIGURATIONS  
(I/O test circuit of Figures 2 and 3, C  
= 15 pF, driver output impedance v 50 W, R  
= 1 MW)  
LOAD  
LOAD  
−405C to +855C  
−555C to +1255C  
(Note 3)  
(Note 3)  
Min  
Typ  
Max  
Min  
Max  
Symbol  
V = 3.6 V, V = 2.5 V  
Parameter  
Test Conditions  
Unit  
L
CC  
t
I/O V Risetime  
15  
10  
15  
10  
15  
15  
5
15  
10  
15  
10  
15  
15  
5
ns  
ns  
RVCC  
CC  
t
I/O V Falltime  
CC  
FVCC  
t
I/O V Risetime  
ns  
RVL  
L
t
I/O V Falltime  
ns  
FVL  
L
t
t
Propagation Delay (Driving I/O V )  
ns  
PDVL−VCC  
PDVCC−VL  
L
Propagation Delay (Driving I/O V  
Channel−to−Channel Skew  
Maximum Data Rate  
)
ns  
CC  
t
nS  
Mb/s  
SKEW  
MDR  
24  
24  
V = 5.5 V, V = 1.65 V  
L
CC  
t
I/O V Risetime  
30  
10  
15  
30  
20  
20  
5
30  
10  
15  
30  
20  
20  
5
ns  
ns  
RVCC  
CC  
t
I/O V Falltime  
CC  
FVCC  
t
I/O V Risetime  
ns  
RVL  
L
t
I/O V Falltime  
ns  
FVL  
L
t
t
Propagation Delay (Driving I/O V )  
ns  
PDVL−VCC  
PDVCC−VL  
L
Propagation Delay (Driving I/O V  
Channel−to−Channel Skew  
Maximum Data Rate  
)
ns  
CC  
t
nS  
Mb/s  
SKEW  
MDR  
24  
24  
3. Limits over the operating temperature range are guaranteed by design.  
TIMING CHARACTERISTICS − OPEN DRAIN DRIVING CONFIGURATIONS  
(I/O test circuit of Figures 4 and 5, C  
= 15 pF, driver output impedance v 50 W, R  
= 1 MW)  
LOAD  
LOAD  
−405C to +855C  
−555C to +1255C  
(Note 4)  
(Note 4)  
Min  
Typ  
Max  
Min  
Max  
Symbol  
Parameter  
Test Conditions  
Unit  
+1.65 v V , V v +5.5 V  
L
CC  
t
I/O V Risetime  
400  
50  
400  
50  
ns  
ns  
RVCC  
CC  
t
I/O V Falltime  
CC  
FVCC  
t
I/O V Risetime  
400  
60  
400  
60  
ns  
RVL  
L
t
I/O V Falltime  
ns  
FVL  
L
t
t
Propagation Delay (Driving I/O V )  
1000  
1000  
50  
1000  
1000  
50  
ns  
PDVL−VCC  
PDVCC−VL  
L
Propagation Delay (Driving I/O V  
Channel−to−Channel Skew  
Maximum Data Rate  
)
ns  
CC  
t
nS  
Mb/s  
SKEW  
MDR  
2
2
4. Limits over the operating temperature range are guaranteed by design.  
www.onsemi.com  
6
 
NLSX4378A  
TEST SETUPS  
NLSX4378A  
NLSX4378A  
V
L
V
CC  
V
L
V
CC  
EN  
EN  
I/O V  
I/O V  
L
I/O V  
L
I/O V  
CC  
CC  
Source  
C
LOAD  
C
LOAD  
Source  
R
LOAD  
R
LOAD  
Figure 2. Rail−to−Rail Driving I/O VL  
Figure 3. Rail−to−Rail Driving I/O VCC  
NLSX4378A  
NLSX4378A  
V
L
V
L
V
CC  
V
CC  
EN  
EN  
I/O V  
CC  
I/O V  
L
I/O V  
CC  
V
CC  
C
LOAD  
C
LOAD  
R
LOAD  
R
LOAD  
Figure 4. Open−Drain Driving I/O VL  
Figure 5. Open−Drain Driving I/O VCC  
t
v
I/O V  
t
RISE/FALL  
v 3 ns  
RISE/FALL  
I/O V  
CC  
L
3 ns  
90%  
50%  
10%  
90%  
50%  
10%  
t
L
t
t
t
PD_VCC−VL  
PD_VCC−VL  
PD_VL−VCC  
PD_VL−VCC  
I/O V  
I/O V  
CC  
90%  
50%  
10%  
90%  
50%  
10%  
t
t
R−VCC  
t
t
R−VL  
F−VCC  
F−VL  
Figure 6. Definition of Timing Specification Parameters  
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7
NLSX4378A  
APPLICATIONS INFORMATION  
Level Translator Architecture  
parameters listed in the data sheet assume that the output  
impedance of the drivers connected to the translator is less  
than 50 W.  
The NLSX4378A auto sense translator provides  
bi−directional voltage level shifting to transfer data in  
multiple supply voltage systems. This device has two  
Enable Input (EN)  
supply voltages, V and V , which set the logic levels on  
L
CC  
The NLSX4378A has an Enable pin (EN) that provides  
tri−state operation at the I/O pins. Driving the Enable pin  
to a low logic level minimizes the power consumption of  
the input and output sides of the translator. When used to  
transfer data from the V to the V ports, input signals  
L
CC  
referenced to the V supply are translated to output signals  
L
the device and drives the I/O V and I/O V pins to a high  
CC  
L
with a logic level matched to V . In a similar manner, the  
CC  
impedance state. Normal translation operation occurs  
when the EN pin is equal to a logic high signal. The EN pin  
V
CC  
to V translation shifts input signals with a logic level  
L
compatible to V to an output signal matched to V .  
CC  
L
is referenced to the V supply and has Overvoltage  
L
The NLSX4378A consists of four bi−directional  
channels that independently determine the direction of the  
data flow without requiring a directional pin. The one−shot  
circuits are used to detect the rising input signals. In  
addition, the one shots decrease the rise time of the output  
signal for low−to−high transitions.  
Each input/output pin has an internal 10 kW pull−up  
resistor. The magnitude of the pull−up resistors can be  
reduced by connecting external resistors in parallel to the  
internal 10 kW resistors.  
Tolerant (OVT) protection.  
Power Supply Guidelines  
During normal operation, supply voltage V can be  
L
greater than, less than or equal to V . The sequencing of  
CC  
the power supplies will not damage the device during the  
power up operation.  
For optimal performance, 0.01 mF to 0.1 mF decoupling  
capacitors should be used on the V and V power supply  
L
CC  
pins. Ceramic capacitors are a good design choice to filter  
and bypass any noise signals on the voltage lines to the  
ground plane of the PCB. The noise immunity will be  
maximized by placing the capacitors as close as possible to  
the supply and ground pins, along with minimizing the  
PCB connection traces.  
Input Driver Requirements  
The rise (t ) and fall (t ) timing parameters of the open  
R
F
drain outputs depend on the magnitude of the pull−up  
resistors. In addition, the propagation times (t ), skew  
PD  
(t  
) and maximum data rate depend on the impedance  
SKEW  
of the device that is connected to the translator. The timing  
ORDERING INFORMATION  
Device  
NLSX4378ABFCT1G  
Package  
mBump12  
Shipping  
3000 / Tape & Reel  
(Backside Laminate Coating)  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
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8
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
12 PIN FLIPCHIP, 2.02x1.54, 0.5P  
CASE 499AU01  
ISSUE O  
DATE 19 MAR 2007  
SCALE 4:1  
NOTES:  
D
A
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
B
E
PIN A1  
REFERENCE  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. COPLANARITY APPLIES TO SPHERICAL  
CROWNS OF SOLDER BALLS.  
2X  
MILLIMETERS  
0.10  
C
DIM MIN  
MAX  
0.66  
0.27  
0.39  
0.34  
A
A1  
A2  
b
−−−  
0.21  
0.33  
0.29  
2X  
0.10  
C
TOP VIEW  
D
D1  
E
E1  
e
2.02 BSC  
A
1.50 BSC  
1.54 BSC  
1.00 BSC  
0.50 BSC  
A2  
0.10  
C
C
A1  
0.05  
12X  
SEATING  
PLANE  
C
NOTE 3  
SIDE VIEW  
D1  
e/2  
e
12X  
b
C
B
A
0.05  
0.03  
C
C
A B  
E1  
1
2
3
4
BOTTOM VIEW  
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON24295D  
12 PIN FLIPCHIP, 2.02 X 1.54, 0.5P  
PAGE 1 OF 1  
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