NRVB0530T1G [ONSEMI]
Surface Mount Schottky Power Rectifier; 表面贴装肖特基整流电源
| 型号： | NRVB0530T1G |
| 厂家： | 
ONSEMI |
| 描述： | Surface Mount Schottky Power Rectifier |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR0530, NRVB0530
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
The MBR0530 uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. These state−of−the−art
devices have the following features:
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SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES
30 VOLTS
Features
• Guardring for Stress Protection
• Low Forward Voltage
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94, V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
• These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics
• Polarity Designator: Cathode Band
• Weight: 11.7 mg (approximately)
B3 MG
1
G
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
B3
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MBR0530T1G
SMB
(Pb−Free)
3,000 /
Tape & Reel **
NRVB0530T1G
MBR0530T3G
NRVB0530T3G
SMB
(Pb−Free)
3,000 /
Tape & Reel **
SMB
(Pb−Free)
10.000 /
Tape & Reel ***
SMB
(Pb−Free)
10.000 /
Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 7
MBR0530T1/D
MBR0530, NRVB0530
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
30
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
F(AV)
(Rated V , T = 100°C)
0.5
R
L
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
5.5
Storage Temperature Range
T
−65 to +150
−65 to +125
1000
°C
°C
stg
Operating Junction Temperature
T
J
Voltage Rate of Change (Rated V )
dv/dt
V/ms
V
R
ESD Rating:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Lead
Symbol
Value
206
Unit
°C/W
°C/W
R
q
JA
R
150
q
JL
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
v
V
F
(i = 0.1 Amps, T = 25°C)
0.375
0.43
F
J
(i = 0.5 Amps, T = 25°C)
F
J
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T = 25°C)
I
R
mA
130
20
C
(V = 15 V, T = 25°C)
R
C
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
4
10
1
T = 125°C
J
1000
100
10
T = 125°C
J
75°C
25°C
-ꢀ40°C
75°C
0.1
25°C
1
0.01
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0
5
10
15
20
25
30
35
40
v , INSTANTANEOUS VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
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2
MBR0530, NRVB0530
180
160
140
120
100
80
TYPICAL CAPACITANCE AT 0 V = 170 pF
60
40
20
0
5
10
15
20
25
30
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Capacitance
1
0.875
DC
0.75
0.625
0.5
SQUARE WAVE
= p
0.375
0.25
0.125
0
= 5
= 10
I /I = 20
pk av
60 67
74
81
88
95
102 109 116 123 130
LEAD TEMPERATURE (°C)
Figure 4. Current Derating (Lead)
0.35
0.315
0.28
0.245
0.21
0.175
0.14
0.105
0.07
0.035
0
T = 125°C
J
SQUARE WAVE
DC
= p
= 5
= 10
I /I = 20
pk av
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
I , AVERAGE FORWARD CURRENT (AMP)
F(AV)
Figure 5. Power Dissipation
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3
MBR0530, NRVB0530
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
---
MAX
1.35
0.10
0.71
0.15
1.80
2.84
3.86
---
MIN
0.037
0.000
0.020
---
NOM
0.046
0.002
0.024
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
A
A1
b
0.94
0.00
0.51
---
H
E
E
c
D
1.40
2.54
3.56
1.60
2.69
3.68
---
0.055
0.100
0.140
0.010
0°
0.063
0.106
0.145
---
E
H
E
L
0.25
0°
---
---
10
10
q
°
°
2
STYLE 1:
PIN 1. CATHODE
2. ANODE
q
L
b
C
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBR0530T1/D
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