NRVB860MFST1G [ONSEMI]
SWITCHMODE Power Rectifiers;
| 型号： | NRVB860MFST1G |
| 厂家： | 
ONSEMI |
| 描述： | SWITCHMODE Power Rectifiers 功效 瞄准线 光电二极管 |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR860MFS, NRVB860MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
http://onsemi.com
Board Mounting
• Guardring for Stress Protection
SCHOTTKY BARRIER
RECTIFIERS
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
• Wettable Flacks Option Available
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
8 AMPERES
60 VOLTS
5,6
1,2,3
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
MARKING
DIAGRAM
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
A
C
C
1
B860
AYWZZ
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Not Used
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
B860
A
= Specific Device Code
= Assembly Location
= Year
Rating
Symbol
Value
Unit
Y
W
ZZ
= Work Week
= Lot Traceability
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
60
R
Average Rectified Forward Current
I
8.0
A
A
F(AV)
(Rated V , T = 165°C)
ORDERING INFORMATION
R
C
Peak Repetitive Forward Current,
I
16
FRM
Device
Package
Shipping†
1500 /
(Rated V , Square Wave,
R
20 kHz, T = 165°C)
MBR860MFST1G
SO−8 FL
C
(Pb−Free) Tape & Reel
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
150
A
FSM
MBR860MFST3G
NRVB860MFST1G
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
Storage Temperature Range
T
−65 to +175
−55 to +175
40
°C
°C
mJ
stg
Operating Junction Temperature
T
J
NRVB860MFST3G
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 0
MBR860MFS/D
MBR860MFS, NRVB860MFS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
2.0
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 8 Amps, T = 125°C)
0.60
0.65
0.72
0.80
F
J
(i = 8 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated dc Voltage, T = 125°C)
25
0.015
75
0.150
J
(Rated dc Voltage, T = 25°C)
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100
10
100
10
T = 175°C
A
T = 175°C
A
150°C
1
1
150°C
125°C
25°C −40°C
0.4 0.5
125°C
25°C −40°C
0.1
0.1
0
0.1
0.2
0.3
0.6
0.7
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
T = 175°C
T = 150°C
A
T = 175°C
T = 150°C
A
A
A
T = 125°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
T = −40°C
A
T = −40°C
A
1.E−09
1.E−10
1.E−09
1.E−10
0
10
20
30
40
50
60
0
10
20
30
40
50
60
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
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2
MBR860MFS, NRVB860MFS
TYPICAL CHARACTERISTICS
1,000
16
T = 25°C
J
14
12
10
dc
Square Wave
100
8
6
4
R
= 2.0°C/W
q
JC
2
0
10
0
10
20
30
40
50
60
60
80
100
120
140
160
180
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
8
I /I = 20
PK AV
T = 175°C
J
7
6
5
4
3
2
I /I = 10
PK AV
I
/I = 5
PK AV
Square Wave
dc
1
0
0
1
2
3
4
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
Single Pulse
0.01
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
PULSE TIME (sec)
Figure 8. Thermal Response
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3
MBR860MFS, NRVB860MFS
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO−8FL)
CASE 488AA
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
ISSUE H
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
3. ANODE
4. NO CONNECT
5. CATHODE
DETAIL A
SOLDERING FOOTPRINT*
3X
4X
b
8X
1.270
0.750
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
E2
2X
0.495
PIN 5
(EXPOSED PAD)
M
4.530
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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MBR860MFS/D
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