NRVFES6D [ONSEMI]

Ultrafast 整流器;
NRVFES6D
型号: NRVFES6D
厂家: ONSEMI    ONSEMI
描述:

Ultrafast 整流器

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中文:  中文翻译
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Ultrafast Rectifiers,  
Surface Mount,  
6 A, 200 V - 600 V  
FES6, NRVFES6 Series  
Features  
www.onsemi.com  
Very Low Profile: Typical Height of 1.1 mm  
Ultrafast Recovery Time  
Low Forward Voltage Drop  
Low Thermal Resistance  
Very Stable Operation at Industrial Temperature, 150°C  
RoHS Compliant  
3
2
Green Molding Compound as per IEC61249 Standard  
Lead Free in Compliance with EU RoHS 2011/65/EU Directive  
With DAP Option Only  
1
TO−277−3LD  
CASE 340BQ  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
Anode 1  
Anode 2  
3
Cathode  
MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Repetitive Peak Reverse Voltage  
V
V
RRM  
MARKING DIAGRAM  
FES6D  
FES6G  
FES6J  
200  
400  
600  
$Y&Z&3  
*
Average Forward Rectified Current  
I
6
A
A
F(AV)  
Peak Forward Surge Current: 8.3 ms  
Single Half Sine−Wave Superimposed  
on Rated Load  
I
80  
FSM  
$Y  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Date Code (Year & Week)  
= Specific Device Code  
FES6D, FES6G, FES6J  
&Z  
&3  
*
Operating Junction Temperature Range  
T
J
−55 to  
+175  
°C  
°C  
Storage Temperature Range  
T
−55 to  
+175  
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
Part Number  
FES6D  
Top Mark  
Package  
Shipping  
FES6D  
NRVFES6D*  
FES6G  
FES6G  
FES6J  
TO−277 3L (with DAP Option only)  
5000 / Tape & Reel  
NRVFES6G*  
FES6J  
NRVFES6J*  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP  
Capable.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
April, 2020 − Rev. 4  
FES6D/D  
FES6, NRVFES6 Series  
THERMAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted) (Note 1)  
A
Parameter  
Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode  
Thermal Resistance, Junction−to−Ambient  
Symbol  
Value  
6
Unit  
°C/W  
°C/W  
Y
JL  
R
100  
q
JA  
1. Per JESD51−3 Recommended Thermal Test Board.  
ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted)  
A
Value  
FES6G  
1.20  
1.00  
2
FES6D  
1.05  
FES6J  
2.2  
Symbol  
Parameter  
Conditions  
Unit  
V
F
Maximum Instantaneous Forward  
Voltage (Note 2)  
I = 6 A  
F
V
I = 6 A, T = 125°C  
0.90  
1.80  
F
J
I
R
Maximum Reverse Current  
T = 25°C  
J
mA  
at Rated V  
R
T = 125°C  
J
200  
500  
C
Typical Junction Capacitance  
Typical Reverse Recovery Time  
V
= 4 V, f = 1 MHz  
60  
45  
pF  
ns  
J
R
T
rr  
I = 0.5 A, I = 1 A, I = 0.25 A  
25  
45  
F
R
RR  
I = 1 A, di/dt = 50 A/ms, V = 30 V  
F
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
2. Pulse test with PW = 300 ms, 1% duty cycle  
www.onsemi.com  
2
 
FES6, NRVFES6 Series  
TYPICAL CHARACTERISTICS  
10  
1
10  
FES6D  
FES6G  
1
o
o
TA = −55C  
TA = −55C  
TA = 25oC  
0.1  
0.1  
0.01  
TA = 25oC  
TA = 75oC  
TA = 75oC  
TA = 125oC  
0.01  
0.001  
TA = 125oC  
TA = 150oC  
1.2  
TA = 150oC  
1.0 1.2  
0.001  
0.0  
0.2  
0.4  
0.6  
0.8  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.4  
VF − FORWARD VOLTAGE (V)  
VF − FORWARD VOLTAGE (V)  
Fig 2. Typical Forward Characteristics for FES6G  
Fig 1. Typical Forward Characteristics for FES6D  
100  
10  
TA = 150oC  
TA = 125oC  
FES6D  
FES6J  
TA = 75oC  
10  
1
1
o
TA = −55C  
0.1  
0.1  
TA = 25oC  
0.01  
0.001  
1E−4  
TA = 75oC  
0.01  
TA = 125oC  
o
TA = 25oC  
TA = 150oC  
TA = −55C  
0.001  
0
50  
100  
150  
200  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
VR − REVERSE VOLTAGE (V)  
VF − FORWARD VOLTAGE (V)  
Fig 4. Typical Reverse Characteristics for FES6D  
Fig 3. Typical Forward Characteristics for FES6J  
100  
100  
TA = 150oC  
TA = 125oC  
FES6G  
TA = 150oC  
TA = 125oC  
FES6J  
10  
1
10  
1
TA = 75oC  
TA = 75oC  
0.1  
0.1  
0.01  
0.001  
0.01  
0.001  
o
TA = 25oC  
o
TA = 25oC  
TA = −55C  
TA = −55C  
0
50 100 150 200 250 300 350 400 450 500 550 600  
VR − REVERSE VOLTAGE (V)  
0
50 100 150 200 250 300 350 400 450 500 550 600  
VR − REVERSE VOLTAGE (V)  
Fig 5. Typical Reverse Characteristics for FES6G  
Fig 6. Typical Reverse Characteristics for FES6J  
www.onsemi.com  
3
FES6, NRVFES6 Series  
TYPICAL CHARACTERISTICS  
1000  
8
7
6
5
4
3
2
1
0
f=1MHz  
TL (Cathode)  
100  
FESD6J  
10  
FESD6D & FESD6G  
TA  
1
0.1  
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
TEMPERATURE (oC)  
VR − REVERSE BIAS VOLTAGE (V)  
Fig 8. Typical Junction Capacitance  
Fig 7. Forward Current Derating Curve  
www.onsemi.com  
4
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO2773LD  
CASE 340BQ  
ISSUE O  
DATE 30 SEP 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13861G  
TO2773LD  
PAGE 1 OF 1  
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