NRVTS2H60ESFT3G [ONSEMI]
Schottky Rectifier, Trench-based, Very Low Forward Voltage;
| 型号： | NRVTS2H60ESFT3G |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Rectifier, Trench-based, Very Low Forward Voltage |
| 文件： | 总7页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NRVTS2H60ESF,
NRVTSM260EV2
Schottky Rectifier,
Trench-based, Very Low
Forward Voltage
www.onsemi.com
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
60 VOLTS
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SOD−123FL
CASE 498
POWERMITE
CASE 457
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Molded Epoxy
MARKING DIAGRAMs
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 11.7 mg (Approximately)
M
2H6G
2H6MG
1
2
G
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
2H6
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
Typical Applications
(Note: Microdot may be in either location)
• Switching Power Supplies including Compact Adapters and Flat
Panel Display
ORDERING INFORMATION
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
†
Device
Package
Shipping
NRVTS2H60ESFT1G SOD−123FL
(Pb−Free)
3,000 /
Tape & Reel
NRVTS2H60ESFT3G SOD−123FL
(Pb−Free)
10,000 /
Tape & Reel
NRVTSM260EV2T1G Powermite
(Pb−Free)
3,000 /
Tape & Reel
NRVTSM260EV2T3G Powermite
(Pb−Free)
12,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2018 − Rev. 2
NRVTS2H60ESF/D
NRVTS2H60ESF, NRVTSM260EV2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
60
V
RRM
V
RWM
V
R
Average Rectified Forward Current
(T = 125°C)
L
I
2.0
4.0
A
A
O
Peak Repetitive Forward Current
I
FRM
(Square Wave, 20 kHz, T = 139°C)
L
Non−Repetitive Peak Surge Current
I
50
A
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
T
stg
, T
J
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
SOD−123FL
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
POWERMITE
Y
24.4
85
°C/W
°C/W
°C/W
JCL
R
q
q
JA
JA
R
330
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
Characteristic
Y
8.6
80
°C/W
°C/W
°C/W
JCL
R
q
JA
JA
R
237
q
Symbol
Value
Unit
V
F
V
Maximum Instantaneous Forward Voltage (Note 4)
0.55
0.65
0.47
0.58
(I = 1.0 A, T = 25°C)
F
J
(I = 2.0 A, T = 25°C)
F
J
(I = 1.0 A, T = 125°C)
F
J
(I = 2.0 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 4)
I
R
(Rated dc Voltage, T = 25°C)
12
3
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
2
2. Mounted with 700 mm copper pad size (Approximately 1 in ) 1 oz FR4 Board.
2
3. Mounted with pad size approximately 20 mm copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
NRVTS2H60ESF, NRVTSM260EV2
TYPICAL CHARACTERISTICS
100
10
100
10
T = 175°C
T = 175°C
A
A
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
1
1
T = 85°C
A
T = 85°C
A
T = 25°C
A
T = 25°C
A
T = −55°C
A
T = −55°C
A
0.1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−01
1.E−02
T = 175°C
A
T = 175°C
A
T = 150°C
A
T = 150°C
A
1.E−03
1.E−04
1.E−05
T = 125°C
A
T = 125°C
A
T = 85°C
A
T = 85°C
A
1.E−05
T = 25°C
A
1.E−06
1.E−07
1.E−06
1.E−07
T = 25°C
A
10
20
30
40
50
60
10
20
30
40
50
60
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
4
3
1000
T = 25°C
J
R
= 24.4°C/W
q
JL
DC
SQUARE WAVE
100
2
1
10
0
0.1
1
10
100
110
120
130
140
150
160
170 180
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NRVTS2H60ESF, NRVTSM260EV2
TYPICAL CHARACTERISTICS
14
12
10
8
I /I = 20
PK AV
I /I = 10
PK AV
6
Square Wave
DC
I /I = 5
PK AV
4
2
0
0
1
2
3
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 8. Thermal Characteristics
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
POWERMITE
CASE 457−04
ISSUE F
DATE 14 MAY 2013
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.15 (0.006) PER SIDE.
F
0.08 (0.003)
C
−A−
M
S
S
C
T B
J
S
MILLIMETERS
DIM MIN MAX
INCHES
MIN
MAX
0.081
0.086
0.045
0.027
0.039
PIN 1
A
B
C
D
F
1.75
1.75
0.85
0.40
0.70
-0.05
0.10
3.60
0.50
1.20
2.05 0.069
2.18 0.069
1.15 0.033
0.69 0.016
1.00 0.028
−B−
K
PIN 2
H
J
+0.10 -0.002 +0.004
0.25 0.004
3.90 0.142
0.80 0.020
1.50 0.047
0.010
0.154
0.031
0.059
R
K
L
L
R
S
0.50 REF
0.019 REF
J
D
H
GENERIC
MARKING DIAGRAMS*
M
S
S
C
0.08 (0.003)
T B
−T−
STYLE 1:
PIN 1. CATHODE
2. ANODE
STYLE 2:
STYLE 3:
PIN 1. ANODE
2. CATHODE
PIN 1. ANODE OR CATHODE
2. CATHODE OR ANODE
(BI−DIRECTIONAL)
M
XXXG
M
XXXG
1
2
1
2
STYLE 1
STYLE 2
SOLDERING FOOTPRINT*
0.635
0.025
M
XXXG
1
2
2.67
0.105
0.762
0.030
STYLE 3
XXX = Specific Device Code
M
G
= Date Code
= Pb−Free Package
2.54
0.100
1.27
0.050
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB14853C
POWERMITE
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOD−123FL
CASE 498
ISSUE D
DATE 10 MAY 2013
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
q
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION
OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.
D
1
2
MILLIMETERS
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
DIM
A
A1
b
c
D
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
NOM
0.95
0.05
0.90
0.15
1.65
2.70
0.75
3.60
−
MAX
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
A1
A
0.98
0.10
1.10
0.20
1.80
2.90
0.95
3.80
8°
POLARITY INDICATOR
OPTIONAL AS NEEDED
TOP VIEW
END VIEW
E
L
q
H
E
q
GENERIC
MARKING DIAGRAM*
H
E
c
SIDE VIEW
XXXMG
2X
L
G
2X
b
XXX = Specific Device Code
M
G
= Date Code
= Pb−Free Package
BOTTOM VIEW
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
RECOMMENDED
SOLDERING FOOTPRINT*
4.20
2X
1.25
2X
1.22
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON11184D
SOD−123FL
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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