NSPU2101MUT5G [ONSEMI]
Unidirectional ESD and Surge Protection, 10 V, 111 A Surge Capable Device;
| 型号： | NSPU2101MUT5G |
| 厂家： | 
ONSEMI |
| 描述： | Unidirectional ESD and Surge Protection, 10 V, 111 A Surge Capable Device |
| 文件： | 总7页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
ESD Protection Diode
NSPU2101
Features
• Protection for the following IEC Standards:
IEC61000−4−2 Level 4: 30 kV Contact Discharge
IEC61000−4−5 (Lightning) 111 A (8/20 ms)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
1
2
MAXIMUM RATINGS
Cathode
Anode
Rating
IEC 61000−4−2 (ESD)
Symbol
Value
Unit
Contact
Air
30
30
kV
MARKING
DIAGRAM
Operating Junction and Storage
Temperature Range
T , T
−65 to +150
°C
J
stg
AAM
UDFN2
CASE 517CZ
Maximum Peak Pulse Current
I
PP
111
A
8/20 ms @ T = 25°C
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AA
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
†
Device
NSPU2101MUT5G
Package
Shipping
UDFN2
(Pb−Free)
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
October, 2020 − Rev. 0
NSPU2101/D
NSPU2101
ELECTRICAL CHARACTERISTICS
A
I
(T = 25°C unless otherwise noted)
I
F
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
I
PP
V
C
PP
V
C
V
V
V
Working Peak Reverse Voltage
BR RWM
RWM
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V
I
RWM
V
Breakdown Voltage @ I
Test Current
BR
T
I
T
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
PP
Uni−Directional
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Symbol
Conditions
Min
11.4
30
Typ
Max
10
Unit
V
Reverse Working Voltage
Breakdown Voltage (Note 1)
Reverse Leakage Current
ESD Contact Rating
V
RWM
I/O Pin to GND
I = 1 mA, I/O Pin to GND
V
BR
12
12.6
0.1
V
T
I
R
V
RWM
= 10 V, I/O Pin to GND
0.01
mA
kV
V
ESD
Per IEC61000−4−2 Specification
Clamping Voltage TLP
(Note 2)
V
C
I
PP
= 8 A
IEC61000−4−2 Level 2 Equivalent
4 kV Contact, 8 kV Air)
12.4
12.7
118
(
I
PP
= 16 A IEC61000−4−2 Level 4 Equivalent
8 kV Contact, 16 kV Air)
(
Reverse Peak Pulse Current
(Note 3)
I
PP
IEC61000−4−5 (8x20 ms)
111
A
V
Clamping Voltage 8x20 ms
V
C
I
I
= 50 A
14.1
16.3
0.037
700
15.7
17.5
PP
(Note 3)
= 111 A
PP
Dynamic Resistance
Junction Capacitance
R
100 ns TLP Pulse
= 0 V, f = 1 MHz
W
DYN
C
V
R
800
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 W,
0
t = 100 ns, t = 1 ns, averaging window; t = 70 ns to t = 90 ns.
p
r
1
2
3. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform, See Figure 10.
A
www.onsemi.com
2
NSPU2101
50
40
30
20
10
0
30
20
10
0
−10
−20
−30
−40
−10
−20
−20
0
20 40 60 80 100 120 140 160 180
TIME (ns)
−20
0
20 40 60 80 100 120 140 160 180
TIME (ns)
Figure 1. ESD Clamping Voltage Positive 8 kV
Figure 2. ESD Clamping Voltage Negative 8 kV
Contact per IEC61000−4−2
Contact per IEC61000−4−2
20
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
0
2
0
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16
(V)
0
10 20 30 40 50 60 70 80 90 100 110 120
V
CTLP
I
PK
(A)
Figure 3. Positive TLP I−V Curve
Figure 4. Positive Clamping Voltage vs. Peak
Pulse Current (tp = 8/20 ms)
1200
1000
800
600
400
200
0
0
1
2
3
4
5
6
7
8
9
10 11
V
Bias
(V)
Figure 5. CV Characteristics
www.onsemi.com
3
NSPU2101
50 W Coax
Cable
Transmission Line Pulse (TLP) Measurement
L
Attenuator
S
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 6. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 7 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels. For more information
on TLP measurements and how to interpret them please
refer to AND9007/D.
÷
50 W Coax
Cable
I
M
V
M
10 MW
DUT
V
C
Oscilloscope
Figure 6. Simplified Schematic of a Typical TLP
System
Figure 7. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
www.onsemi.com
4
NSPU2101
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
I
peak
First Peak
Current
(A)
100%
90%
Test Volt-
age (kV)
Current at
30 ns (A)
Current at
60 ns (A)
Level
1
2
3
4
2
4
6
8
7.5
15
4
8
2
4
6
8
I @ 30 ns
22.5
30
12
16
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
Figure 8. IEC61000−4−2 Spec
Device
Under
Test
Oscilloscope
ESD Gun
50 W
Cable
50 W
Figure 9. Diagram of ESD Test Setup
ESD Voltage Clamping
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
100
t
r
PEAK VALUE I
@ 8 ms
RSM
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
P
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE I /2 @ 20 ms
RSM
t
P
10
0
0
20
40
t, TIME (ms)
60
80
Figure 10. 8 x 20 ms Pulse Waveform
www.onsemi.com
5
NSPU2101
PACKAGE DIMENSIONS
UDFN2 1.6x1.0, 1.1P
CASE 517CZ
ISSUE D
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
NSPV151M10V8X7TR15F
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 10V, 150uF, SURFACE MOUNT, 3333
NICHICON
NSPV151M20V10X10.5TR15F
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 20V, 150uF, SURFACE MOUNT, 4141
NICHICON
NSPV151M6.3V8X7TR15
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 6.3V, 150uF, SURFACE MOUNT, 3333
NICHICON
NSPV181M16V10X8TR15
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 16V, 180uF, SURFACE MOUNT, 4141
NICHICON
NSPV181M16V10X8TR15F
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 16V, 180uF, SURFACE MOUNT, 4141
NICHICON
NSPV220M25V8X7TR15
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 25V, 22uF, SURFACE MOUNT, 3333
NICHICON
©2020 ICPDF网 联系我们和版权申明