NSR05T304MXT5G [ONSEMI]
肖特基势垒整流器，500 mA，30 V;
| 型号： | NSR05T304MXT5G |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒整流器，500 mA，30 V |
| 文件： | 总6页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diode,
500 mA, 30 V
NSR05T304MX
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
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Features
MARKING
DIAGRAM
• Low Forward Voltage Drop − 410 mV (Typ.) @ I = 500 mA
F
• Low Reverse Current − 35 mA (Typ.) @ V = 30 V
R
• 500 mA of Continuous Forward Current
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
M
X2DFN2
CASE 714AB
G
Y
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
1
CATHODE
2
ANODE
ORDERING INFORMATION
MAXIMUM RATINGS
†
Device
NSR05T304MXT5G
Package
Shipping
Rating
Symbol
Value
30
Unit
V
Reverse Voltage
V
R
X2DFN2
(Pb−Free)
2 mm Pitch
8000/Tape &
Reel
Forward Current (DC)
I
F
500
2.2
mA
A
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
1.4
A
FRM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
November, 2020 − Rev. 0
NSR05T304MX/D
NSR05T304MX
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
R
310
480
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Thermal Resistance
Junction−to−Ambient (Note 2)
R
150
1000
°C/W
mW
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
Junction and Storage Temperature Range
T , T
−55 to +85
°C
J
stg
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
1000
D = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
1000
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
SINGLE PULSE
0.000001 0.00001
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
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2
NSR05T304MX
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
I
R
mA
(V = 10 V)
20
35
50
75
R
(V = 30 V)
R
Forward Voltage
V
F
mV
(I = 10 mA)
215
295
330
410
245
320
355
435
F
(I = 100 mA)
F
(I = 200 mA)
F
(I = 500 mA)
F
Total Capacitance
C
30
pF
ns
T
(V = 1.0 V, f = 1.0 MHz)
R
Reverse Recovery Time
t
rr
15
(I = I = 10 mA, I = 1.0 mA, Figure 3)
F
R
R(REC)
Peak Forward Recovery Voltage
(I = 100 mA, t = 20 ns, Figure 4)
V
FRM
430
mV
F
r
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 3. Recovery Time Equivalent Test Circuit
I
F
V
F
t
r
V
FRM
V
F
Time
Time
Figure 4. Peak Forward Recovery Voltage Definition
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3
NSR05T304MX
TYPICAL CHARACTERISTICS
1000
100
10
100
10
150°C
125°C
100°C
150°C
125°C
1
100°C
85°C
85°C
25°C
0.1
0.01
0.001
−25°C
−40°C
−40°C
1
0.0001
−55°C
0.00001
25°C
0.1
−25°C
−55°C
0.3
0.1
0.000001
0
0.2
0.4
0.5
0
5
10
15
20
25
30
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 5. Forward Voltage
Figure 6. Leakage Current
1M
10K
1.0
0.1
100K
10K
1K
1K
100
10
1.0
0.2 0.5
0.8
0.1
0.2 0.5
0.8
100
1
10
1
0.1
0
50 100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
I , FORWARD CURRENT (mA)
F
V , REVERSE VOLTAGE (V)
R
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
90
80
70
16
14
12
10
8
Based on square wave currents
T = 25°C prior to surge
J
f = 1.0 MHz
60
50
40
30
20
6
4
2
0
10
0
0
5
10
15
20
25
30
0.001 0.01
0.1
1
10
100 1000
V , REVERSE VOLTAGE (V)
R
t , PULSE ON TIME (ms)
P
Figure 10. Forward Surge Current
Figure 9. Total Capacitance
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
0.10
C
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A B
E
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
PIN 1
INDICATOR
MILLIMETERS
DIM MIN
NOM MAX
A
A1
b
D
E
e
L
0.34
−−−
0.45
0.95
0.55
0.37
0.03
0.50
1.00
0.60
0.65 BSC
0.25
0.40
0.05
0.55
1.05
0.65
0.05
C
TOP VIEW
NOTE 3
A
0.10
0.10
C
0.20
0.30
C
GENERIC
MARKING DIAGRAM*
A1
SEATING
PLANE
C
SIDE VIEW
XX M
e
b
XX = Specific Device Code
e/2
M
0.05
C A B
M
= Date Code
1
RECOMMENDED
2X
L
0.05
SOLDER FOOTPRINT*
M
C A B
1.20
2X
BOTTOM VIEW
2X
0.47
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON98172F
X2DFN2 1.0X0.6, 0.65P
PAGE 1 OF 1
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