NSR1030QMUTWG [ONSEMI]
1.0 A, 30 V, Schottky Diode Full Bridge Rectifier;
| 型号： | NSR1030QMUTWG |
| 厂家： | 
ONSEMI |
| 描述： | 1.0 A, 30 V, Schottky Diode Full Bridge Rectifier PC 二极管 |
| 文件： | 总5页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSR1030QMUTWG
Schottky Full Bridge, 1A, 30V
These full bridge Schottky barrier diodes are designed for the
rectification of the high speed signal of wireless charging. The
NSR1030QMUTWG has a very low forward voltage that will reduce
conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package
that is ideal for space constrained wireless applications.
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Features
• Extremely Fast Switching Speed
MARKING
DIAGRAM
• Low Forward Voltage − 0.49 V (Typ) @ I = 1 A
F
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
1
1030
AYWWG
G
UDFN4 3x3
CASE 517DB
Typical Applications
• Low Voltage Full Bridge Rectification & Wireless Charging
MAXIMUM RATINGS (T = 125°C unless otherwise noted) (Note 1)
J
1030
A
Y
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Rating
Symbol
Value
30
Unit
V
Reverse Voltage
V
R
WW
G
Forward Current (DC)
I
F
1.0
A
(Note: Microdot may be in either location)
Forward Current Surge Peak
(60 Hz, 1 cycle)
I
I
12
A
FSM
Non−Repetitive Peak Forward Current
A
FSM
PIN CONNECTIONS
(Square Wave, T = 25°C prior to surge)
J
t = 1 ms
t = 1 ms
t = 1 s
40
10
3.0
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. All specifications pertain to a single diode.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
1.80
W
D
DEVICE SCHEMATIC
T = 25°C
(Note 2)
A
Derate above 25°C
18
mW/°C
°C/W
Thermal Resistance Junction to Ambient
R
55.5
q
JA
(Note 2)
Total Device Dissipation
P
D
0.70
W
T = 25°C
Derate above 25°C
(Note 3)
A
7.0
mW/°C
°C/W
Thermal Resistance Junction to Ambient
R
142
q
JA
(Note 3)
Total Device Dissipation
P
0.80
W
D
ORDERING INFORMATION
T = 25°C
(Note 4)
A
Derate above 25°C
8.0
mW/°C
°C/W
Device
Package
Shipping†
Thermal Resistance Junction to Ambient
R
125
q
JA
NSR1030QMUTWG
UDFN4
(Pb−Free)
3000 / Tape &
Reel
(Note 4)
Junction Temperature
T
+125
°C
°C
J
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Storage Temperature Range
T
stg
−55 to
+150
2
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm , 1 oz. copper trace, still air.
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 1 oz. copper trace, still air.
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 2 oz. copper trace, still air.
2
2
© Semiconductor Components Industries, LLC, 2015
Publication Order Number:
May, 2017 − Rev. 1
NSR1030QMU/D
NSR1030QMUTWG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 5)
A
Characteristic
Reverse Breakdown Voltage (I = 1.0 mA)
Symbol
Min
30
−
Typ
−
Max
−
Unit
V
V
(BR)
R
Reverse Leakage (V = 30 V)
I
R
4.0
0.43
0.49
25
20
mA
V
R
Forward Voltage (I = 0.5 A)
V
V
−
0.49
0.60
−
F
F
Forward Voltage (I = 1.0 A)
−
V
F
F
Reverse Recovery Time
t
rr
−
ns
(I = I = 10 mA, I = 1.0 mA)
F
R
R(REC)
Input Capacitance (pins 1 to 3) (V = 1.0 V, f = 1.0 MHz)
C
−
70
−
pF
R
T
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. All specifications pertain to a single diode.
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
50 W INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR1030QMUTWG
TYPICAL CHARACTERISTICS
1
1.0E−01
1.0E−02
150°C
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
125°C
85°C
0.1
25°C
150°C
0.01
−55°C
125°C
0.1
85°C
0.2
−55°C
0.4
25°C
0.3
0.001
1.0E−11
0.0
0.5
0.6
0
5
10
15
20
25
30
V , FORWARD VOLTAGE (V)
F
V , REVERSE VOLTAGE (V)
R
Figure 1. Forward Voltage
Figure 2. Reverse Leakage
80
70
60
50
40
30
20
45
40
Based on square wave currents
T = 25°C
A
T = 25°C prior to surge
J
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
1000
V , REVERSE VOLTAGE (V)
R
T , PULSE ON TIME (ms)
p
Figure 3. Input Capacitance
Figure 4. Forward Surge Current
100
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.00001
0.1
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 5. Thermal Response
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN4 3.0x3.0, 1.30P
CASE 517DB
ISSUE A
DATE 17 SEP 2014
SCALE 2:1
NOTES:
D
A B
E
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.05 AND 0.15 MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PADS AS WELL AS THE TERMINALS.
5. POSITIONAL TOLERANCE APPLIES TO ALL
OF THE EXPOSED PADS.
PIN ONE
INDICATOR
2X
0.10
0.10
C
C
2X
TOP VIEW
SIDE VIEW
MILLIMETERS
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
A
A
A3
A1
0.05
0.05
C
C
A3
b
D
0.13 REF
0.35
0.45
3.00 BSC
D2 0.95
D3 1.15
1.05
1.25
SEATING
PLANE
NOTE 4
C
E
3.00 BSC
E2 1.80
E3 0.75
E4 0.65
1.90
0.85
0.75
M
0.10
D2
C A B
F
NOTE 5
e
F
F1
G
L
1.30 BSC
0.75 BSC
0.70 BSC
0.48 BSC
2X
D3
F1
1
2
1
4
2
0.35
0.55
E2
E3
GENERIC
MARKING DIAGRAM*
M
0.10
C A B
G
E4
4X
4
3
3
NOTE 5
4X b
L
e/2
1
M
0.10
0.05
C A B
e
XXXX
M
SUPPLEMENTAL
C
NOTE 3
AYWWG
BOTTOM VIEW
BOTTOM VIEW
G
XXXX = Specific Device Code
RECOMMENDED
SOLDERING FOOTPRINT*
A
Y
= Assembly Location
= Year
1.30
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PITCH
1.40
1.20
2X
4X
0.63
0.55
*This information is generic. Please refer
to device data sheet for actual part
marking.
1.17
2.02 3.30
Pb−Free indicator, “G” or microdot “ G”,
0.87
may or may not be present.
1.00
0.70
0.75
1
2X
0.50
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON91435F
UDFN4 3.0X3.0, 1.30P
PAGE 1 OF 1
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