NSR201MXT5G [ONSEMI]
用于混音器和检测器的肖特基势垒二极管;
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NSR201MX
Schottky Barrier Diode
for Mixer and Detector
This Schottky Barrier Diode is designed for high frequency
application. It can be used widely for power detector of C Band and
Mixer of Ku Band etc. X2DFN2 package is suitable for compact and
efficient designs.
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Features
2 V, 50 mA
C = 0.15 pF typ.
Schottky Barrier Diode
• Small Interterminal Capacitance
• Less Parasitic Components
• Small Forward Voltage
• Small−sized Package
• Pb−Free, Halogen Free and RoHS compliance
Typical Applications
X2DFN2 1.0 x 0.6, 0.65P
CASE 714AB
• Microwave and Submilliwave Mixer
• Microwave and Submilliwave Power Detector
Specifications
ELECTRICAL CONNECTION
Table 1. ABSOLUTE MAXIMUM RATINGS at T = 25°C
A
1
Parameter
Reverse Voltage
Symbol
Value
Unit
V
Cathode
Anode
V
R
2
50
Forward Current
I
F
mA
°C
MARKING DIAGRAM
Operating Junction
and Storage Temperature
T
T
−55 to +150
J, stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
RF M
RF = Specific Device Code
M
= Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2019 − Rev. 2
NSR201MX/D
NSR201MX
Table 2. ORDERING INFORMATION
Device
Marking
Package
Shipping†
NSR201MXT5G
RF
X2DFN2 1.0 x 0.65 P
(Pb−Free / Halogen Free)
8,000 / Tape & Real
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
Table 3. ELECTRICAL CHARACTERISTICS at T = 25°C (Notes 1, 2)
A
Value
Min
Typ
Max
Parameter
Reverse Voltage
Symbol
Conditions
= 10 μA
Units
V
V
R
I
2
R
Forward Voltage
V
R
I = 1 mA
320
18
mV
Ω
F
F
Series Resistance
Interterminal Capacitance
I = 10 mA
F
14
S
C
V
R
= 0 V, f = 1 MHz
0.15
0.20
pF
1. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
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2
NSR201MX
I
F
− V
F
V
F
− T
A
0.6
0.5
0.4
10
7
T = 25°C
A
5
3
2
10 mA
1.0
7
5
3
2
0.3
0.2
0.1
7
1 mA
5
3
2
100 μA
0.01
7
5
3
0.1
0
2
0.001
0
0.1
0.2
0.3
0.4
0.5
−100
−50
0
50
100
150
200
Forward Voltage, V − V
Ambient Temperature, T − °C
A
IT18041
IT18042
F
I
R
− V
I − T
R A
R
10
7
100
10
T = 25°C
A
5
3
2
1.0
7
5
1.0
3
2
0.1
7
0.1
5
3
2
0.01
0.01
7
5
3
0.001
2
0.001
0.0001
0
0.5
1.0
1.5
2.0
2.5
−100
−50
0
50
100
150
200
Reverce Voltage, V − V
Ambient Temperature, T − °C
A
IT18044
IT18043
R
C − V
R
1.0
T = 25°C
7
5
A
f = 1 MHz
3
2
0.1
7
5
3
2
0.01
0.5
1.0
1.5
2.0
0
Reverce Voltage, V − V
IT18045
R
Figure 1.
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3
NSR201MX
Table 4. S PARAMETER (Z = 50 Ω)
O
I = 0 mA
I = 0.02 mA
I = 0.05 mA
I = 0.1 mA
I = 0.2 mA
I = 0.5 mA
Freq
MAG
ANG
−4.4
MAG
0.988
0.990
0.981
0.980
0.986
0.981
0.969
0.967
0.975
0.968
0.950
0.928
0.912
0.906
0.900
0.903
0.907
0.911
0.895
0.880
0.875
0.883
0.877
0.854
0.852
0.863
ANG
−4.3
MAG
0.978
0.981
0.971
0.970
0.977
0.970
0.959
0.958
0.963
0.957
0.939
0.914
0.900
0.893
0.887
0.891
0.894
0.898
0.881
0.866
0.860
0.868
0.864
0.840
0.840
0.850
ANG
−4.3
MAG
0.963
0.966
0.956
0.956
0.960
0.953
0.942
0.942
0.946
0.938
0.919
0.893
0.881
0.871
0.868
0.873
0.873
0.875
0.859
0.845
0.840
0.846
0.843
0.821
0.822
0.832
ANG
−4.3
MAG
ANG
−4.4
MAG
ANG
−4.3
[GHz]
1
0.964
0.967
0.957
0.956
0.961
0.954
0.943
0.943
0.947
0.940
0.921
0.895
0.882
0.872
0.870
0.874
0.874
0.877
0.860
0.847
0.841
0.847
0.845
0.822
0.823
0.833
0.933
0.937
0.925
0.925
0.929
0.919
0.909
0.911
0.910
0.902
0.883
0.852
0.843
0.831
0.830
0.838
0.833
0.833
0.817
0.806
0.800
0.803
0.804
0.782
0.788
0.797
0.845
0.852
0.838
0.840
0.838
0.822
0.814
0.823
0.809
0.799
0.777
0.738
0.735
0.715
0.723
0.733
0.720
0.715
0.700
0.692
0.687
0.683
0.696
0.680
0.695
0.703
2
−9.7
−9.6
−9.6
−9.7
−9.7
−9.5
3
−15.2
−20.5
−26.0
−32.3
−39.2
−45.7
−52.8
−60.6
−69.7
−80.4
−88.8
261.9
252.7
242.8
231.6
220.8
210.3
198.7
185.5
171.1
157.2
142.0
130.3
118.3
−15.1
−20.3
−25.7
−31.9
−38.7
−45.2
−52.2
−59.9
−68.9
−79.4
−87.7
263.1
253.9
244.1
233.1
222.5
212.1
200.7
187.4
173.3
159.6
144.5
132.6
120.7
−15.2
−20.5
−25.9
−32.1
−39.0
−45.4
−52.5
−60.2
−69.3
−79.9
−88.2
262.4
253.2
243.4
232.3
221.6
211.1
199.6
186.4
172.2
158.3
143.2
131.4
119.5
−15.2
−20.5
−26.0
−32.3
−39.2
−45.7
−52.8
−60.6
−69.7
−80.4
−88.8
261.9
252.6
242.7
231.6
220.7
210.2
198.7
185.4
171.1
157.1
142.1
130.3
118.2
−15.4
−20.6
−26.2
−32.5
−39.6
−46.2
−53.3
−61.2
−70.4
−81.2
−89.6
261.0
251.6
241.6
230.4
219.3
208.7
197.2
184.0
169.3
155.1
140.1
128.6
116.5
−15.7
−20.4
−26.3
−32.5
−40.4
−47.4
−54.2
−62.6
−72.0
−83.5
267.9
258.8
249.0
238.1
227.0
215.4
204.2
192.7
179.7
164.0
149.5
134.7
123.3
111.1
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
50
0.05 mA
0.1 mA
100
25
I = 0.02 mA
0.2 mA
0.5 mA
25 GHz
250
10
10
25
50
100
250
0
1 GHz
20 GHz
−250
5 GHz
−10
−100
10 GHz
−25
15 GHz
IT18046
−50
Figure 2.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
X2DFN2 1.0x0.6, 0.65P
CASE 714AB
ISSUE B
DATE 21 NOV 2017
SCALE 8:1
NOTES:
0.10
C
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
A B
E
D
PIN 1
INDICATOR
MILLIMETERS
DIM MIN
NOM MAX
A
A1
b
D
E
0.34
−−−
0.45
0.95
0.55
0.37
0.03
0.50
1.00
0.60
0.40
0.05
0.55
1.05
0.65
0.05
C
TOP VIEW
NOTE 3
A
e
L
0.65 BSC
0.25
0.10
0.10
C
0.20
0.30
C
GENERIC
MARKING DIAGRAM*
A1
SEATING
PLANE
C
SIDE VIEW
XX M
e
b
XX = Specific Device Code
e/2
M
0.05
C A B
M
= Date Code
1
RECOMMENDED
2X
L
SOLDER FOOTPRINT*
M
0.05
C A B
1.20
2X
BOTTOM VIEW
2X
0.47
0.60
PIN 1
DIMENSIONS: MILLIMETERS
*This information is generic. Please refer to de-
vice data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
98AON98172F
ON SEMICONDUCTOR STANDARD
DOCUMENT NUMBER:
STATUS:
Electronic versions are uncontrolled except when
accessed directly from the Document Repository. Printed
versions are uncontrolled except when stamped
“CONTROLLED COPY” in red.
NEW STANDARD:
DESCRIPTION: X2DFN2 1.0X0.6, 0.65P
PAGE 1 OF 2
DOCUMENT NUMBER:
98AON98172F
PAGE 2 OF 2
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
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may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of
personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©
Semiconductor Components Industries, LLC, 2017
Case Outline Number:
November, 2017 − Rev. B
714AB
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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