NSS12500UW3T2G_07 [ONSEMI]
12 V, 8.0 A, Low VCE(sat) PNP Transistor; 12 V ， 8.0 A ，低VCE （ sat）的PNP晶体管
| 型号： | NSS12500UW3T2G_07 |
| 厂家： | 
ONSEMI |
| 描述： | 12 V, 8.0 A, Low VCE(sat) PNP Transistor |
| 文件： | 总5页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NSS12500UW3T2G
12 V, 8.0 A, Low VCE(sat)
PNP Transistor
2
ON Semiconductor’s e PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V ) and high current gain capability. These
CE(sat)
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are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
12 VOLTS
8.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 55 mW
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
COLLECTOR
3
2
cluster. The high current gain allows e PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
1
• This is a Pb−Free Device
BASE
2
MAXIMUM RATINGS (T = 25°C)
A
EMITTER
Rating
Symbol
Max
−12
Unit
Vdc
Vdc
Vdc
Adc
A
3
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
V
CEO
V
CBO
V
EBO
WDFN3
2
CASE 506AU
−12
1
−7.0
−5.0
−8.0
MARKING DIAGRAM
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
I
C
I
VE M
CM
G
ESD
HBM Class 3B
MM Class C
1
VE = Specific Device Code
THERMAL CHARACTERISTICS
Characteristic
M
= Date Code
Symbol
Max
Unit
G
= Pb−Free Package
Total Device Dissipation, T = 25°C
P
(Note 1)
875
7.0
mW
mW/°C
A
D
ORDERING INFORMATION
Derate above 25°C
†
Device
NSS12500UW3T2G
Package
Shipping
Thermal Resistance,
R
(Note 1)
143
°C/W
q
JA
Junction−to−Ambient
WDFN3
(Pb−Free)
3000/
Tape & Reel
Total Device Dissipation, T = 25°C
Derate above 25°C
P
(Note 2)
(Note 2)
1.5
11.8
W
mW/°C
A
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Thermal Resistance,
Junction−to−Ambient
R
85
°C/W
°C/W
W
q
JA
Thermal Resistance,
Junction−to−Lead #3
R
(Note 2)
23
q
JL
Total Device Dissipation
(Single Pulse < 10 sec)
P
3.0
Dsingle
(Notes 2 & 3)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
2
1. FR−4 @ 100 mm , 1 oz copper traces.
2. FR−4 @ 500 mm , 1 oz copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
March, 2007 − Rev. 1
NSS12500UW3/D
NSS12500UW3T2G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −10 mAdc, I = 0)
−12
−12
−7.0
−
−
−
−
−
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = −0.1 mAdc, I = 0)
Vdc
−
E
C
Collector Cutoff Current
(V = 12 Vdc, I = 0)
I
mAdc
mAdc
CBO
−0.1
−0.1
CB
E
Emitter Cutoff Current
I
EBO
(V = −7.0 Vdc)
−
EB
ON CHARACTERISTICS
DC Current Gain (Note 4)
h
FE
(I = −10 mA, V = −2.0 V)
250
250
250
200
180
−
−
−
−
−
−
C
CE
(I = −500 mA, V = −2.0 V)
−
C
CE
(I = −1.0 A, V = −2.0 V)
300
300
250
C
CE
(I = −2.0 A, V = −2.0 V)
C
CE
(I = −3.0 A, V = −2.0 V)
C
CE
Collector−Emitter Saturation Voltage (Note 4)
(I = −0.1 A, I = −0.010 A) (Note 5)
V
V
CE(sat)
−
−
−
−
−
−
−0.008
−0.055
−0.080
−0.135
−0.190
−0.200
−0.012
−0.070
−0.100
−0.170
−0.240
−0.260
C
B
(I = −1.0 A, I = −0.100 A)
C
B
(I = −1.0 A, I = −0.010 A)
C
B
(I = −2.0 A, I = −0.020 A)
C
B
(I = −3.0 A, I = −0.030 A)
C
B
(I = −4.0 A, I = −0.400 A)
C
B
Base−Emitter Saturation Voltage (Note 4)
(I = −1.0 A, I = −0.01 A)
V
V
V
BE(sat)
−
−
0.760
0.800
−
−0.900
−0.900
C
B
Base−Emitter Turn−on Voltage (Note 4)
(I = −2.0 A, V = −3.0 V)
V
BE(on)
C
CE
Cutoff Frequency
(I = −100 mA, V = −5.0 V, f = 100 MHz)
f
T
MHz
100
−
−
C
CE
Input Capacitance (V = −0.5 V, f = 1.0 MHz)
Cibo
650
210
pF
pF
EB
Output Capacitance (V = −3.0 V, f = 1.0 MHz)
Cobo
−
CB
SWITCHING CHARACTERISTICS
Delay (V = −10 V, I = 750 mA, I = 15 mA)
t
t
−
−
−
−
−
−
−
−
100
150
325
200
ns
ns
ns
ns
CC
C
B1
d
Rise (V = −10 V, I = 750 mA, I = 15 mA)
t
r
CC
C
B1
Storage (V = −10 V, I = 750 mA, I = 15 mA)
CC
C
B1
s
Fall (V = −10 V, I = 750 mA, I = 15 mA)
t
f
CC
C
B1
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
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2
NSS12500UW3T2G
0.5
0.4
0.3
0.2
3.0
I /I = 100
C B
I /I = 10
C
B
2.5
2.0
1.5
1.0
V
= 150°C
CE(sat)
V
= −55°C
CE(sat)
−55°C
150°C
0.1
0
0.5
0
25°C
25°C
10
0.001
0.01
0.1
1.0
10
0.001
0.01
0.1
1.0
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
700
1.4
150°C (5 V)
150°C (2 V)
1.2
1.0
0.8
0.6
0.4
600
500
400
300
200
−55°C
25°C (5 V)
25°C
25°C (2 V)
−55°C (5 V)
150°C
−55°C (2 V)
100
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1.0
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs.
Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
10 mA
100 mA 300 mA
I
C
= 500 mA
V
CE
= −1.0 V
−55°C
25°C
150°C
0.2
0
0.2
0
0.001
0.01
0.1
1.0
10
0.01
0.1
1.0
10
100
I , COLLECTOR CURRENT (A)
C
I , BASE CURRENT (mA)
B
Figure 5. Base Emitter Turn−On Voltage vs.
Figure 6. Saturation Region
Collector Current
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3
NSS12500UW3T2G
350
650
600
550
500
450
400
350
300
C
(pF)
ibo
C
(pF)
300
250
200
150
100
obo
50
0
250
200
0
1.0
2.0
3.0
4.0
5.0
6.0
0
2.0
4.0
6.0
8.0
10
12
14
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Input Capacitance
Figure 8. Output Capacitance
10
1.0 mS
1
10 mS
100 mS
1.0 S
Thermal
Limit
0.1
0.01
0.1
1
10
100
V
CE
(V
dc
)
Figure 9. PNP Safe Operating Area
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4
NSS12500UW3T2G
PACKAGE DIMENSIONS
WDFN3
CASE 506AU−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .
D
A
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS
THE TERMINALS.
B
PIN ONE
MILLIMETERS
INCHES
NOM
0.030
REFERENCE
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
MIN
0.70
0.00
NOM
0.75
MAX
0.80
0.05
MIN
0.028
0.000
MAX
0.031
0.002
0.20 REF
0.30
2.00 BSC
1.50
2.00 BSC
1.00
0.008 REF
0.012
0.079 BSC
0.059
0.079 BSC
0.039
0.051 BSC
0.014 REF
0.016
E
0.25
1.40
0.90
0.35
1.60
1.10
0.010
0.055
0.035
0.014
0.063
0.043
2 X
0.10
C
1.30 BSC
0.35 REF
0.40
2 X
0.35
0.45
0.014
0.018
0.10
C
TOP VIEW
SIDE VIEW
SOLDERING FOOTPRINT*
A
0.10
0.08
C
C
1.300
2X
8 X
0.400
(A3)
0.600
A1
SEATING
PLANE
C
0.250
D2
e
1.100
0.300
e/2
2
1
2X L
0.400
K
0.275
1.600
E2
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
3
0.10
0.05
C
C
A
B
3X b
NOTE 3
BOTTOM VIEW
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSS12500UW3/D
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