NST3906MX2T5G [ONSEMI]
200 mA, 40 V, PNP Bipolar Transistor in SOT-883 ;
| 型号： | NST3906MX2T5G |
| 厂家： | 
ONSEMI |
| 描述： | 200 mA, 40 V, PNP Bipolar Transistor in SOT-883 |
| 文件： | 总6页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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COLLECTOR
General Purpose Transistor
PNP Silicon
3
1
NST3906MX2
BASE
Features
2
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
EMITTER
Compliant
3
MAXIMUM RATINGS
1
2
Rating
Symbol
Value
−40
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
V
CEO
X2DFN3 (1.0 x 0.6 mm)
CASE 714AC
V
−40
Vdc
CBO
EBO
Emitter−Base Voltage
V
−5.0
−200
−800
Vdc
MARKING DIAGRAM
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
I
C
mAdc
mAdc
I
CM
AF M
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
AF = Specific Device Code
M
= Date Code
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
ORDERING INFORMATION
Total Power Dissipation (Note 2)
P
D
@ T = 25°C
165
mW
A
†
Derate above 25°C
1.39
mW/°C
Device
NST3906MX2T5G
Package
Shipping
X2DFN3
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
720
°C/W
8000 / Tape &
Reel
q
JA
(Pb−Free)
Total Power Dissipation (Note 3)
P
D
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
@ T = 25°C
590
mW
A
Derate above 25°C
4.93
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 3)
R
203
°C/W
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
1. Reference SOA Curve
2
2
2. Surface−mounted on FR4 board using a 0.6 mm , 2 oz. Cu pad
3. Surface−mounted on FR4 board using a 100 mm , 2 oz. Cu pad
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2022 − Rev. 0
NST3906MX2/D
NST3906MX2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = −1.0 mAdc, I = 0)
−40
−40
−5.0
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
Vdc
(I = −10 mAdc, I = 0)
−
E
C
Base Cutoff Current
I
BL
nAdc
nAdc
(V = −30 Vdc, V = −3.0 Vdc)
−50
−50
CE
EB
Collector Cutoff Current
I
CEX
(V = −30 Vdc, V = −3.0 Vdc)
−
CE
EB
ON CHARACTERISTICS (Note 4)
DC Current Gain
H
−
FE
(I = −0.1 mAdc, V = −1.0 Vdc)
60
80
100
60
30
−
−
300
−
−
C
CE
(I = −1.0 mAdc, V = −1.0 Vdc)
C
CE
CE
CE
CE
(I = −10 mAdc, V = −1.0 Vdc)
C
(I = −50 mAdc, V = −1.0 Vdc)
C
(I = −100 mAdc, V = −1.0 Vdc)
C
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−0.25
−0.4
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −1.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
C
B
(I = −50 mAdc, I = −5.0 mAdc)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = −10 mAdc, V = −20 Vdc, f = 100 MHz)
250
−
−
C
CE
Output Capacitance
C
obo
(V = −5.0 Vdc, I = 0, f = 1.0 MHz)
4.5
10
CB
E
Input Capacitance
C
pF
ibo
(V = −0.5 Vdc, I = 0, f = 1.0 MHz)
−
EB
C
Input Impedance
h
kW
ie
re
fe
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
2.0
0.1
100
3.0
−
12
C
CE
−4
Voltage Feedback Ratio
h
h
X 10
−
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
10
CE
Small−Signal Current Gain
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
400
60
C
CE
Output Admittance
h
oe
mmhos
dB
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)
C
CE
Noise Figure
NF
(I = −100 mAdc, V = −5.0 Vdc, R = 1.0 kW, f = 1.0 kHz)
4.0
C
CE
S
SWITCHING CHARACTERISTICS
Delay Time
t
t
−
−
−
−
35
35
d
(V = −3.0 Vdc, V = 0.5 Vdc,
CC
BE
ns
ns
I
= −10 mAdc, I = −1.0 mAdc)
C
B1
Rise Time
t
r
Storage Time
225
75
s
(V = −3.0 Vdc, I = −10 mAdc,
CC
C
I
B1
= I = −1.0 mAdc)
B2
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
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2
NST3906MX2
TYPICAL CHARACTERISTICS
Turn−on
Turn−off
−3V
−3V
PW = 20 us
Duty Cycle =<2%
RC = 275 Ohms
RC = 275 Ohms
+9.1V
0V
PW = 300 ns
Duty Cycle =< 2%
RB = 10K Ohms
+0.5 V
0V
RB = 10K Ohms
Cs<15pF*
Cs<15pF*
1N916 or
equivalent
−10.9V
−10.6 V
VCC = −3V, IC = −10mA
IB1 = −1mA, IB2 = 1mA
Forced HFE = 10
VCC = −3V, IC = −10mA, IB = −1 mA
Forced HFE = 10
* Total shunt capacitance of test jig and connecto. rs
* Total shunt capacitance of test jig and connecto.rs
Figure 1. Delay and Rise Time Equivalent Test
Circuit
Figure 2. Storage and Fall Time Equivalent
Test Circuit
10
1000
I /I = 10
C
B
V
CC
= −40 V
C
V
CC
= −20 V
ibo
100
10
V
CC
= −5 V
C
obo
1
−0.1
−1
−10
−1
−10
−100
REVERSE BIAS VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Turn−On Time
1000
1000
I /I = 10
t′ = t − 1/8 x t
C
B
s
s
= I
f
I
B1
B2
V
CC
= −40 V
I /I = 10
C
B
V
= −40 V
= −5 V
V
CC
= −20 V
CC
V
CC
= −20 V
100
10
100
10
V
CC
V
CC
= −5 V
−1
−10
−100
−1
−10
−100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. Rise Time
Figure 6. Storage Time
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3
NST3906MX2
TYPICAL CHARACTERISTICS
1000
1000
I
= I
B2
V
CC
= −1 V
B1
V
CC
= −40 V
I /I = 10
C
B
T = 150°C
A
T = 25°C
A
V
CC
= −20 V
T = −55°C
A
100
10
100
10
V
CC
= −5 V
−1
−10
−100
−0.1
−1
−10
−100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. Fall Time
Figure 8. DC Current Gain
1000
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
V
CC
= −10 V
T = 150°C
A
T = 25°C
A
T = −55°C
A
100
10
I
C
= −200 mA
I
C
= −10 mA
−0.2
−0.1
0
I
C
= −100 mA
I
C
= −1 mA
−0.1
−1
−10
−100
−0.001 −0.01
−0.1
−1
−10 −100
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 9. DC Current Gain
Figure 10. Collector Saturation Region
−0.40
−0.35
−1.00
−0.95
−0.90
−0.85
I /I = 10
T = 25°C
A
I /I = 10
T = 25°C
A
C
B
C
B
−0.30
−0.25
−0.20
−0.15
−0.80
−0.75
−0.70
−0.10
−0.05
−0.65
−0.60
0
−0.001
−0.01
I , COLLECTOR CURRENT (A)
−0.1
−0.001
−0.01
I , COLLECTOR CURRENT (A)
−0.1
C
C
Figure 11. Collector−Emitter Saturation
Figure 12. Base−Emitter Saturation Voltage vs.
Voltage vs. Collector Current
Collector Current
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4
NST3906MX2
TYPICAL CHARACTERISTICS
−0.18
−0.16
−0.14
−0.12
−0.10
−0.08
−0.06
−0.04
1000
I
= −5.0 mA
−4.5 mA
−3.5 mA
B
−4.0 mA
−3.0 mA
−2.0 mA
−2.5 mA
100
−1.5 mA
−0.5 mA
−1.0 mA
10
1
V
= −2 V
CE
T = 25°C
A
−0.02
0
0
−0.5
−1.0
−1.5
−2.0
−2.5
−3.0
−1
−10
I , COLLECTOR CURRENT (mA)
−100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
C
Figure 13. Collector Current vs.
Figure 14. Current Gain Bandwidth vs.
Collector Current
Collector−Emitter Voltage
−1000
−100
1 ms
Thermal Limit
10 ms
100 ms
1 s
−10
−1
−0.1
−1
−10
−100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Safe Operating Area
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5
NST3906MX2
PACKAGE DIMENSIONS
X2DFN3 1.0x0.6, 0.35P
CASE 714AC
ISSUE A
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