NST857BDP6T5G [ONSEMI]
Dual General Purpose Transistor; 双路通用晶体管
| 型号： | NST857BDP6T5G |
| 厂家： | 
ONSEMI |
| 描述： | Dual General Purpose Transistor |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NST857BDP6T5G
Dual General Purpose
Transistor
The NST857BDP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
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Features
(3)
(2)
(1)
Q
• h , 220−475
FE
• Low V
, ≤ 0.3 V
CE(sat)
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
Q
1
2
(4)
(5)
(6)
NST857BDP6T5G
MAXIMUM RATINGS
Rating
Symbol
Value
−45
Unit
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Electrostatic Discharge
V
CEO
V
CBO
V
EBO
4
5
6
−50
Vdc
−6.0
−100
Vdc
3
I
C
mAdc
2
1
HBM
MM
ESD
Class
2
B
SOT−963
CASE 527AD
PLASTIC
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Symbol
Max
Unit
Total Device Dissipation T = 25°C
P
D
240
1.9
mW
mW/°C
MARKING DIAGRAM
A
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
520
°C/W
q
JA
K M G
G
Total Device Dissipation T = 25°C
P
280
2.2
mW
mW/°C
A
D
1
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
446
°C/W
q
JA
K
M
G
= Device Code
= Date Code
= Pb−Free Package
Characteristic (Dual Heated) (Note 3)
Symbol
Max
Unit
(Note: Microdot may be in either location)
Total Device Dissipation T = 25°C
P
350
2.8
mW
mW/°C
A
D
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
357
°C/W
q
JA
ORDERING INFORMATION
Total Device Dissipation T = 25°C
P
D
420
3.4
mW
mW/°C
A
†
Device
Package
Shipping
Derate above 25°C (Note 2)
NST857BDP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
Thermal Resistance, Junction-to-Ambient
(Note 2)
R
297
°C/W
q
JA
Junction and Storage Temperature Range
T , T
−55 to
°C
J
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
2
1. FR−4 @ 100 mm , 1 oz. copper traces, still air.
2. FR−4 @ 500 mm , 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
April, 2008 − Rev. 0
NST857BDP6/D
NST857BDP6T5G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = −10 mA)
V
−45
−50
−50
−5.0
−
−
−
−
−
−
−
−
V
V
V
V
C
(BR)CEO
Collector−Emitter Breakdown Voltage (I = −10 mA, V = 0)
V
C
EB
(BR)CES
(BR)CBO
(BR)EBO
Collector−Base Breakdown Voltage (I = −10 mA)
V
V
C
Emitter−Base Breakdown Voltage (I = −1.0 mA)
E
Collector Cutoff Current (V = −30 V)
I
−
−
−
−
−15
−4.0
nA
mA
CB
CBO
Collector Cutoff Current (V = −30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
−
V
V
V
FE
(I = −10 mA, V = −5.0 V)
−
220
150
290
−
475
C
CE
(I = −2.0 mA, V = −5.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
CE(sat)
−
−
−
−
−0.3
−0.7
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = −10 mA, I = −0.5 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
C
B
(I = −100 mA, I = −5.0 mA)
C
B
Base−Emitter On Voltage
(I = −2.0 mA, V = −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
C
CE
(I = −10 mA, V = −5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
−
−
MHz
pF
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V = −10 V, f = 1.0 MHz)
CB
C
4.5
10
10
obo
Input Capacitance
(V = −0.5 V, f = 1.0 MHz)
EB
C
−
pF
ibo
Noise Figure
NF
−
dB
(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW,
C
CE
S
f = 1.0 kHz, BW = 200 Hz)
0.18
800
700
600
500
400
300
200
I /I = 10
150°C (5.0 V)
C
B
0.16
0.14
0.12
0.10
0.08
0.06
V
= 150°C
CE(sat)
150°C (1.0 V)
25°C (5.0 V)
25°C
25°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
−55°C
0.04
0.02
100
0
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 2. DC Current Gain vs. Collector Current
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2
NST857BDP6T5G
1.0
V
1.0
0.9
0.8
0.7
0.6
0.5
= 2.0 V
I /I = 10
CE
C
B
0.9
0.8
0.7
0.6
−55°C
−55°C
25°C
25°C
0.5
0.4
0.3
0.4
0.3
150°C
150°C
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
9
I
=
C
100 mA
8
50 mA
7
6
5
4
3
30 mA
C
ib
10 mA
0
0.00001
0.0001
0.001
0.01
0
1.0
2.0
, EMITTER BASE VOLTAGE (V)
eb
3.0
4.0
5.0
I , BASE CURRENT (A)
b
V
Figure 5. Saturation Region
Figure 6. Input Capacitance
4.5
4.0
3.5
3.0
2.5
2.0
1.5
C
ob
1.0
0.5
0
5
10
15
20
25
30
V
cb
, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
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3
NST857BDP6T5G
PACKAGE DIMENSIONS
SOT−963
CASE 527AD−01
ISSUE B
NOTES:
C
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
A
B
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
L
6
5
4
3
MILLIMETERS
INCHES
NOM MAX
H
E
E
DIM MIN
NOM
0.37
0.15
0.12
1.00
MAX
MIN
1 2
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
0.40
0.20
0.17
1.05
0.85
0.004 0.006 0.008
0.003 0.005 0.007
0.037 0.039 0.041
0.03 0.032 0.034
0.014 BSC
e
C
0.80
6X
b
e
0.35 BSC
L
HE
0.05
0.95
0.10
1.00
0.15
1.05
0.002 0.004 0.006
0.037 0.039 0.041
0.08
C
A
B
SOLDERING FOOTPRINT*
0.35
0.35
0.014 0.014
0.90
0.0354
0.20
0.08
0.20
0.08
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NST857BDP6/D
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