NSVF6001SB6T1G [ONSEMI]
射频晶体管，NPN 单，12 V，100 mA，fT = 6.7 GHz;
| 型号： | NSVF6001SB6T1G |
| 厂家： | 
ONSEMI |
| 描述： | 射频晶体管，NPN 单，12 V，100 mA，fT = 6.7 GHz 射频 晶体管 |
| 文件： | 总7页 (文件大小：864K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF Transistor
12 V, 100 mA, fT = 6.7 GHz,
NPN Single
NSVF6001SB6
This RF transistor is designed for low noise amplifier applications.
CPH package is suitable for use under high temperature environment
because it has superior heat radiation characteristics. This RF
transistor is AEC−Q101 qualified and PPAP capable for automotive
applications.
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6
5
4
1
2
3
Features
• Input Voltage Operation: up to 32 V
CPH6
CASE 318DB
2
• High Gain: |S21e| = 11 dB typ (f = 1 GHz)
• High Cut−off Frequency: f = 6.7 GHz Typ
T
ELECTRICAL CONNECTION
NPN
• Miniature and Thin 6 Pin Package
• High Collector Dissipation (800 mW)
1, 2, 5, 6
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
1: Collector
2: Collector
3: Base
4: Emitter
5: Collector
6: Collector
Typical Applications
3
• Low Noise Amplifier for FM Radio
• Low Noise Amplifier for TV
4
ABSOLUTE MAXIMUM RATINGS (T = 25°C)
A
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
Unit
V
MARKING DIAGRAM
V
CBO
V
CEO
V
EBO
20
12
V
HGA MG
2
100
V
G
I
C
mA
mW
_C
Collector Dissipation (Note 1)
P
C
800
Operating Junction and Storage
Temperature
T , T
−55 to +150
j
stg
HGA = Specific Device Code
M
= One Digit Data Code
G
= Pb−Free Marking
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on ceramic substrate (250 mm × 0.8 mm).
ORDERING INFORMATION
Device
Package
Shipping
†
NSVF6001SB6T1G
CPH6
3,000 /
(Pb−Free /
Tape & Reel
Halogen Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
December, 2020 − Rev. 0
NSVF6001SB6/D
NSVF6001SB6
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Conditions
= 10 V, I = 0 A
Min
−
Typ
−
Max
1.0
10
180
−
Unit
mA
I
V
CBO
CB
EB
CE
CE
CE
E
I
V
V
V
V
= 1 V, I = 0 A
−
−
mA
EBO
C
h
h
1
2
= 5 V, I = 30 mA
90
70
5
−
FE
C
DC Current Gain
= 5 V, I = 70 mA
−
FE
C
Gain−Bandwidth Product
Output Capacitance
f
T
= 5 V, I = 30 mA
6.7
0.95
0.6
11
1.1
−
GHz
pF
C
Cob
Cre
−
1.5
−
V
CB
= 5 V, f = 1 MHz
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
−
pF
2
|S21e|
NF
V
V
= 5 V, I = 30 mA, f = 1 GHz
9
−
dB
CE
C
= 5 V, I = 7 mA, f = 1 GHz
−
2.0
dB
CE
C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
TYPICAL CHARACTERISTICS
Figure 1. ICE − VCE
Figure 2. IC − VBE
Figure 3. hFE − IC
Figure 4. fT − IC
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2
NSVF6001SB6
TYPICAL CHARACTERISTICS (Continued)
Figure 5. Cob − VCB
Figure 6. Cre − VCB
Figure 7. |S21E|2 − IC
Figure 8. NF − IC
Figure 9. PC − TA
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3
NSVF6001SB6
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4
NSVF6001SB6
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
CPH6
CASE 318BD
ISSUE O
DATE 30 NOV 2011
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON65440E
CPH6
PAGE 1 OF 1
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