NSVMUN5134T1G [ONSEMI]
PNP Bipolar Digital Transistor (BRT);型号: | NSVMUN5134T1G |
厂家: | ONSEMI |
描述: | PNP Bipolar Digital Transistor (BRT) 小信号双极晶体管 |
文件: | 总10页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MUN2134, MMUN2134L,
MUN5134, DTA124XE,
DTA124XM3
Digital Transistors (BRT)
R1 = 22 kW, R2 = 47 kW
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PIN CONNECTIONS
PNP Transistors with Monolithic Bias
Resistor Network
PIN 3
COLLECTOR
(OUTPUT)
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
Features
MARKING DIAGRAMS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SC−59
CASE 318D
STYLE 1
XX MG
G
1
SOT−23
CASE 318
STYLE 6
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XXX MG
G
1
MAXIMUM RATINGS (T = 25°C)
A
SC−70/SOT−323
CASE 419
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Symbol
Max
50
Unit
Vdc
XX MG
G
STYLE 3
V
V
CBO
CEO
1
50
Vdc
SC−75
CASE 463
STYLE 1
I
C
100
40
mAdc
Vdc
XX M
XX M
V
IN(fwd)
1
Input Reverse Voltage
V
7
Vdc
IN(rev)
SOT−723
CASE 631AA
STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
XXX
M
G
= Specific Device Code
=
=
Date Code*
Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
Septenber, 2012 − Rev. 1
DTA124X/D
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
Table 1. ORDERING INFORMATION
†
Device
Part Marking
Package
SC−59
Shipping
MUN2134T1G
6L
A6L
6L
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
8,000 / Tape & Reel
MMUN2134LT1G, SMMUN2134LT1G
MUN5134T1G
SOT−23
SC−70/SOT−323
SC−75
DTA124XET1G
6L
DTA124XM3T5G
6L
SOT−723
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
250
(1) SC−75 and SC−70/SOT−323; Minimum Pad
200
(2) SC−59; Minimum Pad
2
(1) (2)
(3) (4)
(3) SOT−1123; 100 mm , 1 oz. copper trace
(4) SOT−723; Minimum Pad
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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2
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
THERMAL CHARACTERISTICS (SC−59) (MUN2134)
Total Device Dissipation
P
D
T = 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
230
338
1.8
2.7
mW
A
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
540
370
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
R
264
287
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2134L)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
246
400
2.0
3.2
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
508
311
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
174
208
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5134)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
202
310
1.6
2.5
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
R
618
403
°C/W
°C/W
°C
q
JA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
280
332
q
JL
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA124XE)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
200
300
1.6
2.4
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
600
400
°C/W
°C
q
JA
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTA124XM3)
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
A
(Note 1)
(Note 2)
(Note 1)
(Note 2)
260
600
2.0
4.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
480
205
°C/W
°C
q
JA
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
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3
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
Table 3. ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.13
−
CB
E
Collector−Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter−Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector−Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector−Emitter Breakdown Voltage (Note 3)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 3)
h
FE
(I = 5.0 mA, V = 10 V)
80
−
130
−
−
0.25
−
C
CE
Collector *Emitter Saturation Voltage (Note 3)
(I = 10 mA, I = 1.0 mA)
VCE(sat)
Vdc
Vdc
Vdc
Vdc
Vdc
kW
C
B
Input Voltage (off)
(V = 5.0 V, I = 100 mA)
V
i(off)
V
i(on)
−
0.9
1.3
−
CE
C
Input Voltage (on)
(V = 0.2 V, I = 3.0 mA)
−
−
CE
C
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
−
0.2
CC
B
L
Output Voltage (off)
V
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
4.9
−
−
CC
B
L
Input Resistor
R1
R /R
15.4
0.38
22
28.6
0.56
Resistor Ratio
0.47
1
2
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
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4
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
TYPICAL CHARACTERISTICS
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
1
1000
I /I = 10
C
B
V
= 10 V
CE
150°C
25°C
25°C
100
−55°C
150°C
0.1
10
1
−55°C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
10
9
8
7
6
5
4
3
2
1
0
100
f = 10 kHz
= 0 A
T = 25°C
A
−55°C
I
E
10
1
25°C
0.1
0.01
150°C
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10 12 14 16 18 20 22
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
−55°C
25°C
10
1
150°C
V
= 0.2 V
O
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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5
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
NOM
3
DIM
A
A1
b
c
D
E
e
L
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
NOM
1.15
0.06
0.43
0.14
2.90
1.50
1.90
0.40
2.80
MAX
MIN
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
E
1.30
0.10
0.50
0.18
3.10
1.70
2.10
0.60
3.00
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
H
E
1
2
b
e
H
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
MILLIMETERS
INCHES
E
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
−−−
MAX
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
10°
c
1
2
b
0.25
e
q
H
A
E
q
L
STYLE 6:
A1
PIN 1. BASE
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
STYLE 3:
c
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX
0.70
A1 0.00
INCHES
NOM MAX
3
MIN
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
M
D
H
0.20 (0.008) E
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
1.60
E
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
C
A
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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9
MUN2134, MMUN2134L, MUN5134, DTA124XE, DTA124XM3
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
A
b1
−Y−
3
E
HE
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X b
3X
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H E
L
1.15
0.15
1.25
0.25
L2
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
3X
L2
BOTTOM VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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