NSVMUN5234T1G [ONSEMI]
NPN 双极数字晶体管 (BRT);型号: | NSVMUN5234T1G |
厂家: | ONSEMI |
描述: | NPN 双极数字晶体管 (BRT) 小信号双极晶体管 数字晶体管 |
文件: | 总12页 (文件大小:100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT-23 package which is designed for low power surface mount
applications.
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PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 1
BASE
(INPUT)
PIN 2
EMITTER
(GROUND)
Features
• Simplifies Circuit Design
• Reduces Board Space and Component Count
• Pb−Free Packages are Available
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
A8x M G
SOT−23
CASE 318
STYLE 6
G
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
1
V
CBO
CEO
V
50
Vdc
A8x = Specific Device Code
I
C
100
mAdc
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
D
T = 25°C
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 11 of this data sheet.
Derate above 25°C
°C/W
°C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
R
508 (Note 1)
311 (Note 2)
q
JA
Preferred devices are recommended choices for future use
and best overall value.
R
174 (Note 1)
208 (Note 2)
°C/W
°C
q
JL
Junction and Storage Temperature
Range
T , T
J
−55 to +150
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ minimum pad
2. FR−4 @ 1.0 x 1.0 inch pad
© Semiconductor Components Industries, LLC, 2005
Publication Order Number:
August, 2005 − Rev. 7
MMUN2211LT1/D
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V = 50 V, I = 0)
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
I
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
4.0
0.1
EBO
EB
C
Collector-Base Breakdown Voltage (I = 10 mA, I = 0)
V
V
50
50
−
−
−
−
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (Note 3), (I = 2.0 mA, I = 0)
C
B
(BR)CEO
ON CHARACTERISTICS (Note 3)
DC Current Gain
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
h
FE
35
60
80
60
−
−
−
−
−
−
−
−
−
−
−
−
−
(V = 10 V, I = 5.0 mA)
100
140
140
350
350
5.0
15
30
200
150
350
350
CE
C
80
160
160
3.0
8.0
15
80
80
160
160
Collector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
−
−
0.25
Vdc
C
B
(I = 10 mA, I = 5 mA) MMUN2230LT1/MMUN2231LT1
C
B
(I = 10 mA, I = 1 mA) MMUN2215LT1/MMUN2216LT1
C
B
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2238LT1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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2
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS (Note 4)
Output Voltage (on)
Symbol
Min
Typ
Max
Unit
V
OL
Vdc
(V = 5.0 V, V = 2.5 V, R = 1.0 k W)
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2213LT1
MMUN2241LT1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 k W)
CC
B
L
(V = 5.0 V, V = 5.0 V, R = 1.0 k W)
CC
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k W)
V
OH
4.9
−
−
Vdc
CC
B
L
(V = 5.0 V, V = 0.050 V, R = 1.0 k W)
MMUN2230LT1
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
MMUN2238LT1
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 k W)
CC
B
L
Input Resistor
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
kW
15.4
1.54
70
28.6
2.88
130
2.2
100
Resistor Ratio
MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1
MMUN2241LT1
R1/R2
0.8
0.17
−
1.0
0.21
−
1.2
0.25
−
−
−
−
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
0.8
0.055
0.38
1.0
0.1
0.47
1.2
0.185
0.56
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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3
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
1
250
200
I /I = 10
C
B
T = −25°C
A
25°C
75°C
0.1
150
100
50
0.01
R
= 625°C/W
q
JA
0
0.001
0
20
40
60
80
−50
0
50
100
150
T , AMBIENT TEMPERATURE (5°C)
A
I , COLLECTOR CURRENT (mA)
C
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. IC
4
3
1000
100
10
V
CE
= 10 V
f = 1 MHz
= 0 A
T = 25°C
A
l
E
T = 75°C
A
25°C
−25°C
2
1
0
0
10
20
30
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 3. DC Current Gain
Figure 4. Output Capcitance
100
10
10
25°C
V
O
= 0.2 V
T = −25°C
A
75°C
25°C
T = −25°C
A
75°C
1
0.1
1
0.01
0.001
V = 5 V
O
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
V , INPUT VOLTAGE (VOLTS)
in
I , COLLECTOR CURRENT (mA)
C
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
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4
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
1000
1
T = −25°C
A
V
CE
= 10 V
I /I = 10
C
B
25°C
T = 75°C
A
75°C
0.1
−25°C
25°C
100
0.01
−
10
0.001
1
10
100
0
20
60
80
40
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
= 0 A
T = 25°C
A
T = −25°C
A
l
E
0.1
0.01
V
O
= 5 V
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
V
O
= 0.2 V
T = −25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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5
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213LT1
10
1
1000
I /I = 10
T = −25°C
V
CE
= 10 V
C
B
A
T = 75°C
A
75°C
25°C
25°C
−25°C
100
0.1
0.01
10
0
20
40
60
80
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 12. VCE(sat) vs. IC
Figure 13. DC Current Gain
1
100
10
1
25°C
75°C
f = 1 MHz
= 0 A
T = 25°C
A
l
E
0.8
T = −25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
O
= 5 V
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 14. Output Capacitance
Figure 15. Output Current vs. Input Voltage
100
V
O
= 0.2 V
T = −25°C
A
25°C
75°C
10
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage vs. Output Current
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6
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
1
0.1
300
V
CE
= 10
T = 75°C
I /I = 10
A
C
B
T = −25°C
A
250
200
150
100
25°C
25°C
−25°C
75°C
0.01
50
0
0.001
0
20
40
60
80
1
2
4
6
8 10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 17. VCE(sat) vs. IC
Figure 18. DC Current Gain
100
10
1
4
3.5
3
75°C
25°C
f = 1 MHz
= 0 A
T = 25°C
A
l
E
2.5
T = −25°C
A
2
1.5
1
0.5
0
V
O
= 5 V
20
25 30 35 40 45 50
0
2
4
6
8
10
0
2
4
6
8
10 15
V , INPUT VOLTAGE (VOLTS)
in
V , REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 20. Output Current vs. Input Voltage
Figure 19. Output Capacitance
10
T = −25°C
A
V
O
= 0.2 V
25°C
75°C
1
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage vs. Output Current
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7
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2232LT1
1
0.1
1000
V
= 10 V
I /I =10
CE
C
B
T = 75°C
A
T = 75°C
A
100
25°C
−25°C
25°C
−25°C
0.01
10
1
0.001
4
8
12
16
20
24
28
0
25
50
75
100
125
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 22. VCE(sat) vs. IC
Figure 23. DC Current Gain
6
5
4
100
10
V
O
= 5 V
75°C
f = 1 MHz
E
T = 25°C
A
25°C
I
= 0 A
1
3
2
T = −25°C
A
0.1
0.01
1
0
0
10
20
30
40
50
60
0
2
4
6
8
V
R,
REVERSE BIAS VOLTAGE (VOLTS)
V
in,
INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
Figure 25. Output Current vs. Input Voltage
10
V
O
= 0.2 V
T = −25°C
A
75°C
1
25°C
0.1
0
10
20
30
I
C,
COLLECTOR CURRENT (mA)
Figure 26. Output Voltage vs. Input Current
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8
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2233LT1
1
0.1
1000
I /I = 10
C
B
75°C
25°C
100
75°C
T = −25°C
A
25°C
T = −25°C
A
0.01
10
V
CE
= 10 V
1
0.001
1
10
100
2
7
12
17
22
27
32
60
12
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 28. DC Current Gain
Figure 27. VCE(sat) vs. IC
4
100
10
75°C
f = 1 MHz
= 0 A
T = 25°C
3.5
3
I
T = −25°C
E
A
A
2.5
2
1
1.5
1
0.1
0.01
25°C
0.5
0
V
O
= 5 V
0
10
V
20
30
40
50
0
2
4
6
8
REVERSE BIAS VOLTAGE (VOLTS)
V
INPUT VOLTAGE (VOLTS)
R,
in,
Figure 29. Output Capacitance
Figure 30. Output Current vs. Input Voltage
10
V
O
= 0.2 V
T = −25°C
A
25°C
75°C
1
0.1
0
6
18
24
30
I
C,
COLLECTOR CURRENT (mA)
Figure 31. Input Voltage vs. Output Current
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9
MMUN2211LT1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM mP OR
OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 33. Open Collector Inverter: Inverts
the Input Signal
Figure 34. Inexpensive, Unregulated
Current Source
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10
MMUN2211LT1 Series
ORDERING INFORMATION
Device
†
Marking
R1(k)
10
R2(k)
10
Package
Shipping
MMUN2211LT1
SOT−23
3000 / Tape & Reel
10,000 / Tape & Reel
MMUN2211LT1G
10
10
SOT−23
(Pb−Free)
A8A
MMUN2211LT3
10
10
10
10
SOT−23
MMUN2211LT3G
SOT−23
(Pb−Free)
MMUN2112LT1
22
22
22
22
SOT−23
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
MMUN2212LT1G
SOT−23
(Pb−Free)
MMUN2213LT1
47
47
47
47
SOT−23
MMUN2213LT1G
SOT−23
(Pb−Free)
MMUN2214LT1
10
10
47
47
SOT−23
MMUN2214LT1G
SOT−23
(Pb−Free)
MMUN2215LT1
10
10
∞
∞
SOT−23
MMUN2215LT1G
SOT−23
(Pb−Free)
MMUN2216LT1
4.7
4.7
∞
∞
SOT−23
MMUN2216LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMUN2230LT1
1.0
1.0
1.0
1.0
SOT−23
MMUN2230LT1G
SOT−23
(Pb−Free)
MMUN2231LT1
2.2
2.2
2.2
2.2
SOT−23
MMUN2231LT1G
SOT−23
(Pb−Free)
MMUN2232LT1
4.7
4.7
4.7
4.7
SOT−23
MMUN2232LT1G
SOT−23
(Pb−Free)
MMUN2233LT1
4.7
4.7
47
47
SOT−23
A8K
MMUN2233LT1G
SOT−23
(Pb−Free)
MMUN2234LT1
22
22
47
47
SOT−23
MMUN2234LT1G
SOT−23
(Pb−Free)
A8L
MMUN2234LT3
22
22
47
47
SOT−23
10,000 / Tape & Reel
3000 / Tape & Reel
MMUN2234LT3G
SOT−23
(Pb−Free)
MMUN2238LT1
MMUN2238LT1G
MMUN2241LT1
MMUN2241LT1G
2.2
2.2
∞
∞
∞
∞
SOT−23
A8R
A8U
SOT−23
(Pb−Free)
100
100
SOT−23
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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11
MMUN2211LT1 Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
D
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
E
H
A
E
1
2
MILLIMETERS
INCHES
NOM
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.69
2.64
MIN
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
e
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.021
0.094
C
A1
b
L
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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