NSVMUN5211DW1T2G [ONSEMI]
Dual NPN Bias Resistor Transistors;
| 型号： | NSVMUN5211DW1T2G |
| 厂家： | 
ONSEMI |
| 描述： | Dual NPN Bias Resistor Transistors |
| 文件： | 总8页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUN5211DW1,
NSBC114EDXV6,
NSBC114EDP6
Dual NPN Bias Resistor
Transistors
R1 = 10 kW, R2 = 10 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
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PIN CONNECTIONS
(2)
(3)
(1)
R
1
R
2
Q
1
Q
2
R
2
Features
R
1
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
(4)
(5)
(6)
MARKING DIAGRAMS
6
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
SOT−363
CASE 419B
7A M G
Compliant
G
MAXIMUM RATINGS
A
1
(T = 25°C, common for Q and Q , unless otherwise noted)
1
2
Rating
Symbol
Max
50
Unit
Vdc
SOT−563
CASE 463A
1
7A M G
Collector-Base Voltage
Collector-Emitter Voltage
V
CBO
CEO
G
V
50
Vdc
Collector Current − Continuous
Input Forward Voltage
I
100
40
mAdc
Vdc
C
V
IN(fwd)
SOT−963
CASE 527AD
M G
Input Reverse Voltage
V
10
Vdc
IN(rev)
G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
7A/A
M
G
=
=
=
Specific Device Code
Date Code*
Pb-Free Package
ORDERING INFORMATION
†
Device
Package
Shipping
(Note: Microdot may be in either location)
MUN5211DW1T1G,
SMUN5211DW1T1G*
SOT−363
3,000 / Tape & Reel
*Date Code orientation may vary depending up-
on manufacturing location.
NSVMUN5211DW1T2G*
NSVMUN5211DW1T3G*
SOT−363
SOT−363
SOT−563
3,000 / Tape & Reel
10,000 / Tape & Reel
4,000 / Tape & Reel
NSBC114EDXV6T1G,
NSVBC114EDXV6T1G*
NSBC114EDXV6T5G
NSBC114EDP6T5G
SOT−563
SOT−963
8,000 / Tape & Reel
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2016 − Rev. 4
DTC114ED/D
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MUN5211DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
P
D
T = 25°C
(Note 1)
187
256
1.5
2.0
mW
A
(Note 2)
Derate above 25°C
(Note 1)
mW/°C
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
R
670
490
°C/W
q
JA
MUN5211DW1 (SOT−363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P
D
T = 25°C
(Note 1)
250
385
2.0
3.0
mW
A
(Note 2)
Derate above 25°C
(Note 1)
(Note 1)
mW/°C
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 2)
R
°C/W
°C/W
°C
q
JA
493
325
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
R
q
JL
188
208
Junction and Storage Temperature Range
NSBC114EDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
T , T
J
−55 to +150
stg
P
D
T = 25°C
(Note 1)
357
2.9
mW
mW/°C
A
Derate above 25°C
(Note 1)
Thermal Resistance,
Junction to Ambient
R
°C/W
q
JA
D
(Note 1)
350
NSBC114EDXV6 (SOT−563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P
T = 25°C
(Note 1)
500
4.0
mW
mW/°C
A
Derate above 25°C
(Note 1)
(Note 1)
Thermal Resistance,
Junction to Ambient
R
°C/W
q
JA
250
Junction and Storage Temperature Range
NSBC114EDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
T , T
−55 to +150
°C
J
stg
P
D
T = 25°C
(Note 4)
231
269
1.9
2.2
MW
A
(Note 5)
Derate above 25°C
(Note 4)
(Note 4)
mW/°C
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
R
°C/W
q
JA
540
464
NSBC114EDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
P
D
T = 25°C
(Note 4)
339
408
2.7
3.3
MW
A
(Note 5)
Derate above 25°C
(Note 4)
(Note 4)
mW/°C
(Note 5)
Thermal Resistance,
Junction to Ambient
(Note 5)
R
°C/W
°C
q
JA
369
306
Junction and Storage Temperature Range
T , T
J
−55 to +150
stg
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 × 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
2
2
4. FR−4 @ 100 mm , 1 oz. copper traces, still air.
5. FR−4 @ 500 mm , 1 oz. copper traces, still air.
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2
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
ELECTRICAL CHARACTERISTICS (T = 25°C, common for Q and Q , unless otherwise noted)
A
1
2
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
I
nAdc
nAdc
mAdc
Vdc
CBO
(V = 50 V, I = 0)
−
−
−
−
−
−
−
100
500
0.5
−
CB
E
Collector-Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CE
B
Emitter-Base Cutoff Current
(V = 6.0 V, I = 0)
I
EBO
−
EB
C
Collector-Base Breakdown Voltage
(I = 10 mA, I = 0)
V
V
(BR)CBO
(BR)CEO
50
50
C
E
Collector-Emitter Breakdown Voltage (Note 6)
(I = 2.0 mA, I = 0)
Vdc
−
C
B
ON CHARACTERISTICS
DC Current Gain (Note 6)
h
FE
(I = 5.0 mA, V = 10 V)
35
−
60
−
−
0.25
−
C
CE
Collector-Emitter Saturation Voltage (Note 6)
(I = 10 mA, I = 0.3 mA)
V
V
CE(sat)
C
B
Input Voltage (Off)
(V = 5.0 V, I = 100 mA)
V
Vdc
Vdc
Vdc
Vdc
kW
i(off)
i(on)
−
1.2
2.0
−
CE
C
Input Voltage (On)
(V = 0.2 V, I = 10 mA)
V
−
−
CE
C
Output Voltage (On)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
−
0.2
CC
B
L
Output Voltage (Off)
V
OH
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
4.9
7.0
0.8
−
−
CC
B
L
Input Resistor
Resistor Ratio
R1
R /R
10
1.0
13
1.2
1
2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
400
350
300
250
(1) SOT−363; 1.0 × 1.0 Inch Pad
200
(2) SOT−563; Minimum Pad
(1) (2) (3)
2
(3) SOT−963; 100 mm , 1 oz. Copper Trace
150
100
50
0
−50 −25
0
25
50
75
100
125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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3
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
TYPICAL CHARACTERISTICS
MUN5211DW1, NSBC114EDXV6
1
1000
I /I = 10
C
B
V
CE
= 10 V
25°C
T = −25°C
A
T = 75°C
A
25°C
0.1
75°C
−25°C
100
10
0.01
0.001
0
20
40
50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) vs. IC
Figure 3. DC Current Gain
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
100
10
T = 75°C
A
−25°C
25°C
f = 10 kHz
= 0 A
T = 25°C
A
I
E
1
0.1
0.01
V
= 5 V
9
0.4
0
O
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
10
−25°C
25°C
T = 75°C
A
1
V
O
= 0.2 V
40
0.1
0
10
20
30
50
I , COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage vs. Output Current
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4
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
TYPICAL CHARACTERISTICS
NSBC114EDP6
1
1000
25°C
V
CE
= 10 V
I /I = 10
C
B
150°C
100
−55°C
150°C
25°C
0.1
10
1
−55°C
0.01
0
10
20
30
40
50
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. VCE(sat) vs. IC
Figure 8. DC Current Gain
2.4
2.0
100
10
1
f = 10 kHz
= 0 A
T = 25°C
A
150°C
I
E
−55°C
25°C
1.6
1.2
0.8
0.1
V
5
= 5 V
6
O
0.4
0
0.01
0
10
20
30
40
50
0
1
2
3
4
7
V , REVERSE VOLTAGE (V)
R
V , INPUT VOLTAGE (V)
in
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10
25°C
−55°C
150°C
1
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage vs. Output Current
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5
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
NOTES:
D
H
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
A
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
D
GAGE
PLANE
6
1
5
2
4
3
L
L2
E1
E
DETAIL A
aaa C
2X
2X 3 TIPS
bbb H D
e
MILLIMETERS
DIM MIN NOM MAX
−−−
INCHES
MIN
−−−
NOM MAX
−−− 0.043
−−− 0.004
6X b
B
TOP VIEW
A
−−−
−−−
1.10
A1 0.00
A2 0.70
0.10 0.000
M
ddd
C A-B D
0.90
0.20
0.15
2.00
2.10
1.25
0.65 BSC
0.36
1.00 0.027 0.035 0.039
0.25 0.006 0.008 0.010
0.22 0.003 0.006 0.009
2.20 0.070 0.078 0.086
2.20 0.078 0.082 0.086
1.35 0.045 0.049 0.053
0.026 BSC
b
C
D
E
0.15
0.08
1.80
2.00
A2
DETAIL A
A
E1 1.15
e
L
0.26
0.46 0.010 0.014 0.018
0.006 BSC
L2
0.15 BSC
0.15
aaa
bbb
ccc
ddd
0.006
0.012
0.004
0.004
0.30
0.10
0.10
6X
ccc C
A1
SEATING
PLANE
c
C
SIDE VIEW
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.30
6X
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
D
−X−
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
L
6
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
E
−Y−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
1.70 0.059 0.062 0.066
H
1.60
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6
PACKAGE DIMENSIONS
SOT−963
CASE 527AD
ISSUE E
NOTES:
D
X
Y
1. DIMENSIONING AND TOLERANCING PER ASME
A
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
6
5
4
3
H
E
E
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
0.80
0.35 BSC
1.00
0.19 REF
0.10
MAX
0.40
0.20
0.17
1.05
0.85
C
TOP VIEW
e
A
b
C
D
E
0.34
0.10
0.07
0.95
0.75
SIDE VIEW
6X
L
e
HE
0.95
0.05
1.05
0.15
L
L2
6X
b
6X
L2
0.08
X Y
BOTTOM VIEW
RECOMMENDED
MOUNTING FOOTPRINT*
6X
6X
0.35
0.20
PACKAGE
OUTLINE
1.20
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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DTC114ED/D
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