NSVT5401MR6T1G [ONSEMI]
PNP General-Purpose Amplifier;
| 型号： | NSVT5401MR6T1G |
| 厂家： | 
ONSEMI |
| 描述： | PNP General-Purpose Amplifier |
| 文件： | 总6页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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PNP General-Purpose
Amplifier
ELECTRICAL CONNECTION
Collector
4, 6
NSVT5401MR6
Base
1, 3
Features
• This Device Has Matched Dies
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Emitter
2, 5
C2
E1
C1
B2
E2
ABSOLUTE MAXIMUM RATINGS (Notes 1, 2)
A
Pin 1
B1
(T = 25°C, unless otherwise noted)
TSOT23 6−Lead
CASE 419BL
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
−150
Unit
V
V
CEO
V
CBO
V
EBO
−160
V
MARKING DIAGRAM
−5.0
V
Collector Current − Continuous
I
−600
mA
°C
C
4S2 M
Operating and Storage Junction
Temperature Range
T ,
STG
−55 to +150
J
T
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. onsemi should be consulted on applications
involving pulsed or low−duty−cycle operations.
4S2
M
= Specific Device Code
= Date Code
PIN ASSIGNMENT
THERMAL CHARACTERISTICS (Note 3)
A
(T = 25°C, unless otherwise noted)
4 C2
5 E1
6 C1
B2 3
E2 2
B1 1
Characteristic
Symbol
Max
700
180
Unit
mW
Total Device Dissipation
P
D
Thermal Resistance,
Junction−to−Ambient, Total
R
°C/W
q
JA
3. Device mounted on a 1 in 2 pad of 2 oz copper.
ORDERING INFORMATION
†
Device
Shipping
Package
NSVT5401MR6T1G TSOT23−6
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
March, 2022 − Rev. 0
NSVT5401MR6/D
NSVT5401MR6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Parameter
Symbol
Test Condition
= −1.0 mA, I = 0
Min
−150
−160
−5.0
−
Max
−
Unit
V
Collector−Emitter Breakdown Voltage (Note 4)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
BV
BV
BV
I
I
I
CEO
CBO
EBO
C
C
E
B
= −100 mA, I = 0
−
V
E
= −10 mA, I = 0
−
V
C
I
V
V
V
V
= −120 V, I = 0
−50
−50
−50
−
nA
mA
nA
−
CBO
CB
CB
EB
E
= −120 V, I = 0, T = 100°C
−
E
A
Emitter Cut−Off Current
I
= −3 V, I = 0
−
EBO
C
DC Current Gain (Note 4)
h
FE1
= −5 V, I = −1 mA
50
CE
FE1
C
Variation Ratio of h
DIVID1
h
(Die1) / h (Die2)
0.9
1.1
−
FE1
FE1
Between Die 1 and Die 2
DC Current Gain (Note 4)
h
V
= −5 V, I = −10 mA
60
240
−
−
FE2
CE
C
Variation Ratio of h
DIVID2
h
FE2
(Die1) / h (Die2)
0.95
1.05
FE2
FE2
Between Die 1 and Die 2
DC Current Gain (Note 4)
h
V
= −5 V, I = −50 mA
50
−
−
−
FE3
CE
C
Variation Ratio of h
DIVID3
h
FE3
(Die1) / h (Die2)
0.9
1.1
FE3
FE3
Between Die 1 and Die 2
Collector−Emitter Saturation Voltage (Note 4)
V
(sat)
I
C
I
C
I
C
I
C
= −10 mA, I = −1 mA
−
−
−0.2
−0.5
−1
V
V
CE
BE
B
= −50 mA, I = −5 mA
B
Base−Emitter Saturation Voltage
(Note 4)
V
(sat)
= −10 mA, I = −1 mA
−
B
= −50 mA, I = −5 mA
−
−1
B
Base−Emitter On Voltage (Note 4)
V
(on)
V
CE
V
BE
= −5 V, I = −10 mA
−
−1
V
BE
C
Difference of V (on)
DEL
(on)(Die) − V (on)(Die2)
−8
8
mV
BE
BE
Between Die1 and Die 2
Current Gain Bandwidth Product
f
T
V
= −10 V, I = −10 mA,
100
300
MHz
CE
C
f = 100 MHz
Output Capacitance
Noise Figure
C
V
V
= −10 V, I = 0, f = 1 MHz
−
−
6.0
8.0
pF
dB
ob
CB
E
NF
= −5.0 V, I = −250 mA,
CE
C
R
= 1.0 kW
S
f = 10 Hz to 15.7 kHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse test: Pulse width ≤ 300 ms, duty cycle ≤ 2%
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2
NSVT5401MR6
TYPICAL PERFORMANCE CHARACTERISTICS
200
150
T = 125°C
J
100
25°C
70
50
−55°C
V
V
= −1.0 V
= −5.0 V
CE
CE
30
20
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
0.20
0.18
0.15
0.13
0.10
0.08
0.05
1.0
I /I = 10
C
B
−55°C
25°C
0.9
0.8
0.7
0.6
0.5
0.4
I /I = 10
C
B
150°C
150°C
25°C
−55°C
0.03
0
0.3
0.2
0.0001
0.001
0.01
0.1
0.0001
0.001
0.01
0.1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
3
10
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
CE
= 30 V
V
CE
= 10 V
2
1
0
10
10
10
I
C
= I
CES
−55°C
25°C
T = 125°C
J
75°C
−1
10
150°C
REVERSE
FORWARD
−2
10
25°C
0.3
0.2
−3
10
0.0001
0.001
0.01
0.1
0.3 0.2 0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
I , COLLECTOR CURRENT (A)
C
V
BE
, BASE−EMITTER VOLTAGE (V)
Figure 5. Collector Cut−Off Region
Figure 4. Base Emitter Voltage vs. Collector
Current
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3
NSVT5401MR6
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
100
70
50
T = 25°C
J
30
20
C
ibo
10
7.0
5.0
C
obo
3.0
2.0
1.0
0.2
1.0
2.0 3.0 5.0 7.0
0.3
0.5 0.7
10
20
V , REVERSE VOLTAGE (V)
R
Figure 6. Capacitances
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6−Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX MG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6−Lead
PAGE 1 OF 1
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