NTD5862NT4G [ONSEMI]
N-Channel Power MOSFET 60 V, 98 A, 5.7 m; N沟道功率MOSFET的60 V， 98 A， 5.7米？
| 型号： | NTD5862NT4G |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET 60 V, 98 A, 5.7 m |
| 文件： | 总8页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5862N, NTP5862N
N-Channel Power MOSFET
60 V, 98 A, 5.7 mW
Features
• Low R
DS(on)
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• High Current Capability
• 100% Avalanche Tested
V
R
MAX
I
D
MAX
(BR)DSS
DS(on)
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
60 V
5.7 mW @ 10 V
98 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
Gate−to−Source Voltage − Continuous
V
"20
"30
V
GS
GS
G
Gate−to−Source Voltage
V
V
− Non−Repetitive (t < 10 ms)
p
S
Continuous Drain Cur-
rent (R ) (Note 1)
T
= 25°C
= 100°C
= 25°C
I
98
69
A
C
D
N−CHANNEL MOSFET
q
JC
Steady
State
T
C
4
Power Dissipation
(R
T
C
P
115
W
D
)
q
JC
4
Pulsed Drain Current
t = 10 ms
p
I
335
A
DM
4
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
2
1
3
1
Source Current (Body Diode)
I
96
A
S
2
3
DPAK
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
E
AS
205
mJ
1
DPAK
CASE 369C
(Surface Mount)
STYLE 2
2
CASE 369D
(Straight Lead)
STYLE 2
3
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
TO−220AB
CASE 221A
STYLE 5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
THERMAL RESISTANCE MAXIMUM RATINGS
Drain
4
4
Parameter
Symbol
Value
1.3
Unit
Drain
Drain
Junction−to−Case (Drain)
R
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 2)
1. Limited by package to 50 A continuous.
R
37
q
JA
NTP
5862NG
AYWW
2. Surface−mounted on FR4 board using 1 in sq pad size
2
(Cu area = 1.127 in sq [2 oz] including traces.
Drain
1
3
1
Gate
3
Gate Source
Source
1
2
3
Gate Drain Source
2
Drain
A
Y
= Assembly Location
= Year
WW
= Work Week
5862N = Device Code
= Pb−Free Package
G
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 2
NTD5862N/D
NTD5862N, NTP5862N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
47
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
= 0 V,
GS
DS
V
= 60 V
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
2.0
4.0
5.7
V
mV/°C
mW
S
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
J
−9.7
4.4
18
GS(TH)
R
V
= 10 V, I = 45 A
D
DS(on)
GS
gFS
V
= 15 V, I = 10 A
D
DS
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
5050
500
300
82
6000
600
pF
nC
iss
V
GS
= 0 V, f = 1.0 MHz,
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oss
V
= 25 V
C
420
rss
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
5.2
24
G(TH)
V
GS
= 10 V, V = 48 V,
DS
I
= 45 A
D
Q
GS
Q
27
GD
R
0.6
W
G
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
t
18
70
35
60
ns
d(on)
t
r
V
= 10 V, V = 48 V,
DD
GS
D
I
= 45 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.9
0.75
38
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 45 A
T = 100°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
20
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 45 A
Discharge Time
tb
18
Reverse Recovery Charge
Q
40
nC
RR
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Order Number
NTD5862N−1G
Package
Shipping
DPAK (Straight Lead)
75 Units / Rail
(Pb−Free)
NTD5862NT4G
NTP5862NG
DPAK (Pb−Free)
2500 / Tape & Reel
50 Units / Rail
TO−220AB (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5862N, NTP5862N
TYPICAL CHARACTERISTICS
200
200
160
120
80
V
DS
≥ 5 V
T = 25°C
J
V
GS
= 10 V
180
160
140
120
100
80
6.2 V
6.0 V
5.8 V
5.6 V
T = 25°C
J
60
40
40
5.2 V
20
T = 125°C
J
T = −55°C
J
0
0
0
1
2
3
4
5
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.006
0.005
0.004
0.003
I
= 45 A
D
V
= 10 V
GS
T = 25°C
J
T = 25°C
J
4
5
6
7
8
9
10
10
20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100000
10000
1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= 0 V
I
= 45 A
= 10 V
D
V
GS
T = 150°C
J
T = 125°C
J
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTD5862N, NTP5862N
TYPICAL CHARACTERISTICS
10
6000
5000
4000
3000
2000
V
= 0 V
Q
GS
T
C
9
8
7
6
5
4
iss
T = 25°C
J
Q
Q
gd
gs
3
2
1
0
V
DS
= 48 V
C
1000
0
oss
I
D
= 45 A
T = 25°C
J
C
rss
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
100
80
V
= 0 V
V
I
= 48 V
= 45 A
= 10 V
GS
DD
T = 25°C
J
D
V
GS
t
r
60
t
d(on)
t
f
t
d(off)
40
20
0
1
1
10
R , GATE RESISTANCE (W)
100
0.50
0.60
0.70
0.80
0.90
1.00
1.10
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
225
200
175
150
125
100
75
I
D
= 37 A
10 ms
100 ms
1 ms
10 ms
dc
V
= 10 V
GS
SINGLE PULSE
= 25°C
T
C
1
50
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
25
0
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD5862N, NTP5862N
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
NTD5862N, NTP5862N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.91
4.09
2.66
4.10
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.036
0.161
0.105
0.161
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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6
NTD5862N, NTP5862N
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
L2
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
3.00
0.244
0.118
2.58
0.102
5.80
1.60
0.063
6.17
0.228
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTD5862N, NTP5862N
PACKAGE DIMENSIONS
DPAK
CASE 369D
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
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NTD5862N/D
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