NTF6P02 [ONSEMI]
Power MOSFET -10 Amps, -20 Volts; 功率MOSFET -10安培，伏特-20
| 型号： | NTF6P02 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -10 Amps, -20 Volts |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTF6P02, NVF6P02
Power MOSFET
-10 Amps, -20 Volts
P−Channel SOT−223
http://onsemi.com
Features
• Low R
DS(on)
−10 AMPERES
−20 VOLTS
RDS(on) = 44 mW (Typ.)
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free and are RoHS Compliant
S
G
Typical Applications
• Power Management in Portables and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
D
P−Channel MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
& PIN ASSIGNMENT
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current (Note 1)
Symbol
V
Value
−20
Unit
Vdc
Vdc
DSS
Drain
4
4
V
GS
8.0
1
2
3
AYW
6P02G
G
− Continuous @ T = 25°C
I
−10
−8.4
−35
Adc
A
D
D
SOT−223
CASE 318E
STYLE 3
− Continuous @ T = 70°C
I
A
− Single Pulse (t = 10 ms)
I
Apk
W
p
DM
Total Power Dissipation @ T = 25°C
P
D
8.3
A
1
2
3
Operating and Storage Temperature Range T , T
−55 to
+150
°C
J
stg
Gate Drain Source
A
Y
W
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
Single Pulse Drain−to−Source Avalanche
Energy − Starting T = 25°C
E
150
mJ
°C/W
°C
AS
J
(V = −20 Vdc, V = −5.0 Vdc,
DD
L(pk)
GS
6P02
G
I
= −10 A, L = 3.0 mH, R = 25W)
G
Thermal Resistance
(Note: Microdot may be in either location)
− Junction to Lead (Note 1)
− Junction to Ambient (Note 2)
− Junction to Ambient (Note 3)
R
R
15
71.4
160
q
JL
JA
JA
q
q
R
ORDERING INFORMATION
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
260
L
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Steady State.
2. When surface mounted to an FR4 board using 1” pad size,
(Cu. Area 1.127 sq in), Steady State.
4000 / Tape &
Reel
SOT−223
(Pb−Free)
NTF6P02T3G
4000 / Tape &
Reel
SOT−223
(Pb−Free)
NVF6P02T3G*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu. Area 0.412 sq in), Steady State.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
August, 2013 − Rev. 6
NTF6P02T3/D
NTF6P02, NVF6P02
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(V = 0 Vdc, I = −250 mAdc)
Temperature Coefficient (Positive)
V
Vdc
mV/°C
mAdc
(BR)DSS
−20
−25
−11
−
−
GS
D
−
Zero Gate Voltage Drain Current
I
DSS
(V = −20 Vdc, V = 0 Vdc)
−
−
−
−
−1.0
−10
DS
GS
(V = −20 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate−Body Leakage Current
(V 8.0 Vdc, V = 0 Vdc)
I
−
−
100
nAdc
GSS
=
GS
DS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
V
Vdc
mV/°C
mW
GS(th)
(V = V , I = −250 mAdc)
−0.4
−0.7
−1.0
DS
GS D
−
2.6
−
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
R
DS(on)
(V = −4.5 Vdc, I = −6.0 Adc)
−
−
−
44
57
57
50
70
−
GS
D
(V = −2.5 Vdc, I = −4.0 Adc)
GS
D
(V = −2.5 Vdc, I = −3.0 Adc)
GS
D
g
−
12
−
Mhos
pF
Forward Transconductance (Note 4)
(V = −10 Vdc, I = −6.0 Adc)
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
−
−
−
−
−
−
900
350
90
1200
500
150
−
(V = −16 Vdc, V = 0 V,
DS
GS
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
Input Capacitance
C
rss
C
iss
940
410
110
(V = −10 Vdc, V = 0 V,
pF
DS
GS
f = 1.0 MHz)
Output Capacitance
C
oss
−
Transfer Capacitance
C
rss
−
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
−
−
−
−
−
−
−
−
−
−
−
7.0
25
75
50
8.0
30
60
60
15
1.7
6.0
12
45
125
85
−
(V = −5.0 Vdc, I = −1.0 Adc,
ns
ns
d(on)
DD
D
V
= −4.5 Vdc,
GS
G
t
r
R
= 6.0 W)
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn−On Delay Time
Rise Time
(V = −16 Vdc, I = −6.0 Adc,
d(on)
DD
D
V
GS
R
= −4.5 Vdc,
G
t
r
−
= 2.5 W)
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
−
Q
20
−
Gate Charge
(V = −16 Vdc, I = −6.0 Adc,
nC
T
DS
GS
D
V
= −4.5 Vdc) (Note 4)
Q
gs
gd
Q
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = −3.0 Adc, V = 0 Vdc) (Note 4)
V
−
−
−
−0.82
−0.74
−0.68
−1.2
−
Vdc
ns
S
GS
SD
(I = −2.1 Adc, V = 0 Vdc)
S
GS
(I = −3.0 Adc, V = 0 Vdc, T = 125°C)
−
S
GS
J
t
−
−
−
−
42
17
−
−
−
−
Reverse Recovery Time
(I = −3.0 Adc, V = 0 Vdc,
S GS
rr
dI /dt = 100 A/ms) (Note 4)
S
t
a
t
25
b
Reverse Recovery Stored Charge
Q
0.036
mC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
12
−10 V
−7.0 V
−5.0 V
9
12
−2.2 V
T = 25°C
J
V
DS
≥ −10 V
−2.0 V
−1.8 V
10
8
−2.4 V
−3.2 V
−4.4 V
6
6
3
−1.6 V
−1.4 V
4
T = −55°C
J
2
0
T = 25°C
J
V
5
= −1.2 V
T = 100°C
J
GS
0
0
1
2
3
4
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.2
T = 25°C
J
0.07
0.06
0.05
0.04
I
= −6.0 A
D
0.15
0.1
V
= −2.5 V
= −4.5 V
GS
T = 25°C
J
V
GS
0.05
0
0.03
0.02
0
1
2
3
4
5
6
2
4
6
8
10
12
14
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I DRAIN CURRENT (AMPS)
D,
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.4
1.2
10,000
1000
100
I
V
= −6.0 A
D
V
GS
= 0 V
T = 150°C
J
= −4.5 V
GS
1.0
0.8
0.6
T = 100°C
J
−50 −25
0
25
50
75
100 125
150
2
4
6
8
10
12
14
16
18
20
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Drain−to−Source Leakage Current
Figure 5. On−Resistance Variation with
versus Voltage
Temperature
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3
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
3000
2400
1800
1200
5
20
V
DS
= 0 V
V
GS
= 0 V
Q
T
T = 25°C
J
C
iss
−V
DS
4
3
2
16
12
8
−V
GS
C
rss
Q
gs
Q
gd
C
iss
I
= −6.0 A
D
C
oss
600
0
4
0
1
0
T = 25°C
J
C
rss
−V
GS
−V
DS
10
5
0
5
10
15
20
0
4
8
12
16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
Q , TOTAL GATE CHARGE (nC)
g
(VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
7
1000
100
V
= −16 V
= −3.0 A
= −4.5 V
DD
V
GS
= 0 V
I
D
6
5
4
3
2
T = 25°C
J
V
GS
t
t
d(off)
t
f
t
r
10
1
d(on)
1
0
1
10
R , GATE RESISTANCE (W)
100
0.3
0.6
0.9
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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4
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1″ PAD)
q
JA
0.05
0.1
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
0.02
CHIP
JUNCTION
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 11. FET Thermal Response
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5
NTF6P02, NVF6P02
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
ꢀꢁ2. CONTROLLING DIMENSION: INCH.
D
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
4
2
H
E
E
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10°
H
E
q
C
q
STYLE 3:
PIN 1. GATE
2. DRAIN
A
0.08 (0003)
3. SOURCE
4. DRAIN
A1
L
L1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTF6P02T3/D
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