NTH4L060N065SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L;
| 型号： | NTH4L060N065SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L |
| 文件： | 总8页 (文件大小：340K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
44ꢀmohm, 650 V, M2,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
650 V
70 mꢀ @ 18 V
47 A
D
NTH4L060N065SC1
Features
G
S1: Kelvin Source
S2: Power Source
• Typ. R
= 44 mꢀ @ V = 18 V
GS
= 60 mꢀ @ V = 15 V
GS
DS(on)
Typ. R
DS(on)
S1 S2
• Ultra Low Gate Charge (Q
= 74 nC)
G(tot)
N−CHANNEL MOSFET
• Low Capacitance (C = 133 pF)
oss
• 100% Avalanche Tested
• T = 175°C
J
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
D
S2
• SMPS (Switching Mode Power Supplies)
• Solar Inverters
• UPS (Uninterruptable Power Supplies)
• Energy Storages
S1
G
TO−247−4LD
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
MARKING DIAGRAM
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
650
V
V
V
Gate−to−Source Voltage
V
GS
−8/+22
−5/+18
H4L060
065SC1
AYWWZZ
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
C
Continuous Drain
Current (Note 1)
Steady
State
T
I
D
47
176
33
A
W
A
C
Power Dissipation
(Note 1)
P
D
H4L060065SC1 = Specific Device Code
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 100°C
I
D
A
Y
= Assembly Location
= Year
Power Dissipation
(Note 1)
P
88
W
A
D
WW = Work Week
ZZ
= Lot Traceability
Pulsed Drain Current
(Note 2)
T
C
= 25°C
I
152
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
Source Current (Body Diode)
I
35
51
A
S
Device
Package
Shipping
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
NTH4L060N065SC1 TO−247−4LD 30 Units /
Energy (I
= 10.1 A, L = 1 mH) (Note 3)
L(pk)
Tube
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 51 mJ is based on starting T = 25°C; L = 1 mH, I = 10.1 A,
J
AS
V
DD
= 50 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
January, 2023 − Rev. 3
NTH4L060N065SC1/D
NTH4L060N065SC1
Table 1. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
Symbol
Max
0.85
40
Unit
°C/W
R
ꢁ
JC
R
ꢁ
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
650
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 20 mA, referenced to 25°C
D
−
0.15
V/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
10
1
ꢂ A
mA
nA
DSS
GS
DS
J
= 650 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
V
= +18/−5 V, V = 0 V
250
GSS
GS
DS
V
R
= V , I = 6.5 mA
1.8
−5
−
2.8
−
4.3
+18
−
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 20 A, T = 25°C
60
44
50
12
mꢀ
DS(on)
D
J
= 18 V, I = 20 A, T = 25°C
−
70
−
D
J
= 18 V, I = 20 A, T = 175°C
−
D
J
Forward Transconductance
g
= 10 V, I = 20 A
−
−
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 325 V
−
−
−
−
−
−
−
1473
133
13
−
−
−
−
−
−
−
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
D
= −5/18 V, V = 520 V,
74
G(TOT)
GS
DS
I
= 20 A
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
Q
20
GS
23
GD
R
f = 1 MHz
3.9
ꢀ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
D
= −5/18 V, V = 400 V,
−
−
−
−
−
−
−
11
14
24
11
45
18
63
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 20 A, R = 2.2 ꢀ
G
t
r
Inductive load
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
ꢂ
J
E
OFF
E
tot
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
V
= −5 V, T = 25°C
−
−
−
−
−
35
152
−
A
V
SD
GS
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
= −5 V, I = 20 A, T = 25°C
4.3
SD
GS
SD
J
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2
NTH4L060N065SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/18 V, I = 20 A,
−
−
−
−
−
−
17.7
90.6
8.7
−
−
−
−
−
−
ns
nC
ꢂ J
A
RR
GS
S
SD
dI /dt = 1000 A/ꢂ s
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
10.2
9.8
RRM
Ta
ns
ns
Discharge Time
Tb
7.8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTH4L060N065SC1
TYPICAL CHARACTERISTICS
5.0
60
50
40
30
20
V
= 18 V
GS
15 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
12 V
V
GS
= 12 V
10 V
9 V
15 V
18 V
8 V
7 V
10
0
1.0
0.5
0
10
20
I , DRAIN CURRENT (A)
30
40
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.7
240
140
I
V
= 20 A
D
I
D
= 20 A
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
= 18 V
GS
T = 25°C
J
T = 150°C
J
0.8
0.7
40
−75 −50 −25
0
25 50 75 100 125 150 175 200
8
9
10 11 12 13 14 15 16 17 18
V , GATE−TO−SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
100
90
80
70
60
50
40
30
20
100
V
DS
= 10 V
V
GS
= −5 V
T = 175°C
J
T = 25°C
J
T = 25°C
J
10
T = 175°C
J
T = −55°C
J
T = −55°C
J
10
0
1
2
3
4
5
6
7
8
4
6
8
10
12
14
16
18
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NTH4L060N065SC1
TYPICAL CHARACTERISTICS (CONTINUED)
10000
18
15
12
9
V = 390 V
DD
I
D
= 20 A
C
iss
V
DD
= 520 V
1000
100
V
DD
= 650 V
C
oss
6
3
C
rss
0
10
1
f = 1 MHz
= 0 V
−3
−6
V
GS
0
25
50
Q , GATE CHARGE (nC)
75
100
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
50
40
30
20
V
GS
= 18 V
T = 25°C
J
10
10
0
R
= 0.85°C/W
ꢁ
JC
1
25
50
75
100
125
150
175
0.001
0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
300
100
20000
10000
Single Pulse
Single Pulse
R
= 0.85°C/W
ꢁ
JC
R
= 0.85°C/W
ꢁ
JC
T
C
= 25°C
10 ꢂ s
T
C
= 25°C
10
100 ꢂ s
1000
100
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100
0.1
0.00001 0.0001
0.001
0.01
0.1
1
0.1
1
10
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTH4L060N065SC1
TYPICAL CHARACTERISTICS (CONTINUED)
1
0.5 Duty Cycle
0.2
0.1
0.1
0.05
0.02
P
DM
Notes:
= 0.85°C/W
R
ꢁ
JC
0.01
t
1
Peak T = P
x Z (t) + T
ꢁ
JC C
J
DM
t
Duty Cycle, D = t /t
2
1
2
Single Pulse
0.00001
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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