NTHL033N65S3HF [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，70 A，33 mΩ，TO-247;
| 型号： | NTHL033N65S3HF |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，70 A，33 mΩ，TO-247 |
| 文件： | 总10页 (文件大小：451K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTHL033N65S3HF
MOSFET – Power,
N‐Channel, SUPERFET III,
FRFET
www.onsemi.com
650 V, 70 A, 33 mW
Description
V
R
MAX
I MAX
D
DSS
DS(ON)
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
650 V
33 mW @ 10 V
70 A
D
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
G
S
Features
• 700 V @ T = 150°C
J
• Typ. R
= 28 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 188 nC)
g
• Low Effective Output Capacitance (Typ. C
= 1568 pF)
oss(eff.)
• 100% Avalanche Tested
G
• These Devices are Pb−Free and are RoHS Compliant
D
S
Applications
TO−247 long leads
CASE 340CX
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
MARKING DIAGRAM
• UPS / Solar
$Y&Z&3&K
NTHL033
N65S3HF
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
NTHL033N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2019 − Rev. 1
NTHL033N65S3HF/D
NTHL033N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
30
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
70
A
C
− Continuous (T = 100°C)
53
C
I
Drain Current
− Pulsed (Note 1)
175
1250
12
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
AS
AS
I
E
5.0
mJ
V/ns
AR
dv/dt
100
50
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
P
(T = 25°C)
C
500
4.0
W
W/°C
°C
D
− Derate Above 25°C
T , T
Operating and Storage Temperature Range
−55 to +150
300
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 12 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 35 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.25
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
30 Units
NTHL033N65S3HF
NTHL033N65S3HF
TO−247
Tube
N/A
N/A
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2
NTHL033N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 15 mA, Referenced to 25_C
0.63
263
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
= 650 V, V = 0 V
10
mA
DSS
GS
V
= 520 V, T = 125_C
DS
C
I
Gate to Body Leakage Current
V
=
30 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 2.5 mA
3.0
5.0
33
V
mW
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
= 10 V, I = 35 A
28
49
GS
DS
D
g
FS
V
= 20 V, I = 35 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
6720
159
1568
292
188
55
pF
pF
pF
pF
nC
nC
nC
W
iss
V
= 400 V, V = 0 V, f = 1 MHz
GS
DS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
DS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
g(tot)
V
DS
= 400 V, I = 35 A, V = 10 V
D
GS
Q
gs
(Note 4)
Q
73
gd
ESR
f = 1 MHz
1.1
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
43
35
ns
ns
ns
ns
d(on)
V
= 400 V, I = 35 A,
D
t
r
DD
GS
V
= 10 V, R = 2.2 W
g
t
110
28
d(off)
(Note 4)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
Source to Drain Diode Forward
70
175
1.3
A
A
V
S
I
SM
V
SD
V
GS
= 0 V, I = 35 A
SD
Voltage
t
Reverse Recovery Time
Reverse Recovery Charge
173
ns
rr
V
DD
= 400 V, I = 35 A,
SD
F
dI /dt = 100 A/ms
Q
1003
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTHL033N65S3HF
TYPICAL CHARACTERISTICS
200
100
300
VGS = 10.0 V
VDS = 20 V
250 ms Pulse Test
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100
10
1
150oC
10
25oC
o
−55 C
250ms Pulse Test
TC = 25oC
1
2
3
4
5
6
7
0.1
1
10
20
VDS, Drain−Source Voltage[V]
V
GS, Gate-Source Voltage[V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.04
0.03
0.02
0.01
1000
100
10
TC = 25oC
VGS = 0 V
250 ms Pulse Test
VGS = 10 V
150oC
VGS = 20 V
1
25oC
0.1
o
−55 C
0.01
0.001
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
ID, Drain Current [A]
VS,DBody Diode Forward Voltage [V]
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Body Diode Forward Voltage
Current and Gate Voltage
Variation vs. Source Current and Temperature
100000
10
I
D = 35 A
Ciss
10000
1000
100
10
8
6
4
2
0
VDS = 130 V
VDS = 400 V
Coss
VGS = 0 V
f = 1 MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
1
= C + C
oss
rss
ds gd
= C
gd
0.1
0
50
100
150
200
0.1
1
10
100
1000
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTHL033N65S3HF
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
2.5
VGS = 10 V
ID = 35 A
VGS = 0 V
ID = 15 mA
2.0
1.5
1.0
0.5
0.0
−50
0
50
100
150
−50
0
50
100
150
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
500
80
70
60
50
40
30
20
10
0
30ms
100
10
1
100ms
1ms
10ms
Operation in This Area
is Limited by RDS(on)
DC
TC = 25oC
TJ = 150oC
Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
o
VDS, Drain−Source Voltage [V]
TC, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
50
40
30
20
10
0
0
130
260
390
520
650
V
DS, Drain to Source Voltage [V]
Figure 11. Eoss vs. Drain−to−Source Voltage
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5
NTHL033N65S3HF
TYPICAL CHARACTERISTICS
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
Z
R
(t) = r(t) x R
o
qJC
qJC
= 0.25 C/W
SINGLE PULSE
10−4
qJC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
J
DM
qJC C
1
2
0.001
10−5
10−3
10−2
10−1
100
101
102
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
NTHL033N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= Const.
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
V
DS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
GS
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTHL033N65S3HF
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Com-
ponents Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
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© Semiconductor Components Industries, LLC, 2018
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