NTHL065N65S3F [ONSEMI]
功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，46 A，65 mΩ，TO-247;
| 型号： | NTHL065N65S3F |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，N 沟道，SUPERFET® III，FRFET®，650 V，46 A，65 mΩ，TO-247 |
| 文件： | 总10页 (文件大小：431K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTHL065N65S3F
MOSFET – Power, N-Channel,
SUPERFET III, FRFET
650 V, 46 A, 65 mW
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional component and
improve system reliability.
V
R
MAX
I MAX
D
DSS
DS(on)
650 V
65 mΩ @ 10 V
46 A
D
G
Features
S
• 700 V @ T = 150°C
J
• Typ. R
= 54 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 98 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 876 pF)
oss(eff.)
• This Device is Pb−Free and is RoHS Compliant
G
D
S
Applications
TO−247−3LD
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
CASE 340CH
MARKING DIAGRAM
• USP / Solar
$Y&Z&3&K
NTHL
065N65S3F
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
&Z
&3
&K
NTHL065N65S3F = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
August, 2019 − Rev. 4
NTHL065N65S3F/D
NTHL065N65S3F
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
NTHL065N65S3F
Unit
V
V
DSS
GSS
Drain to Source Voltage
Gate to Source Voltage
650
30
V
DC
V
AC (f > 1 Hz)
30
I
D
Drain Current
Continuous (T = 25°C)
46
A
C
Continuous (T = 100°C)
30
C
I
Drain Current
Pulsed (Note 1)
115
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
635
5.3
AS
I
AS
E
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
3.37
100
50
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
P
D
Power Dissipation
T
= 25°C
337
2.7
W
C
Derate Above 25°C
W/°C
T , T
Operating and Storage Temperature Range
−55 to +150
J
STG
°C
°C
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
T
L
300
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 5.3 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 23 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
NTHL065N65S3F
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.37
40
_C/W
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
Packing Method
Reel Size
N/A
Tape Width
Quantity
NTHL065N65S3F
NTHL065N65S3F
TO−247
Tube
N/A
30 Units
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2
NTHL065N65S3F
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
V
= 0 V, I = 1 mA, T = 25°C
650
700
−
−
−
−
−
V
V
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150°C
GS
D
J
DBV
/ DT Breakdown Voltage Temperature Coefficient
I = 15 mA, Referenced to 25°C
D
0.63
−
−
V/°C
mA
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
10
−
DSS
GS
= 520 V, T = 125°C
−
153
−
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
−
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 1.3 mA
3.0
−
−
5.0
65
−
V
mW
S
GS(th)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 23 A
54
31
DS(on)
D
= 20 V, I = 23 A
g
FS
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
−
−
−
−
−
−
−
−
4075
95
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
V
= 400 V, V = 0 V, f = 1 MHz
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V = 0 V
876
160
98
oss(eff.)
DS
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
g(tot)
V
DS
= 400 V, I = 23 A, V = 10 V
D GS
(Note 4)
Q
30
gs
gd
Q
38
ESR
f = 1 MHz
1.5
SWITCHING CHARACTERISTICS
V
V
= 400 V, I = 23 A,
D
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
−
−
−
−
34
31
78
16
−
−
−
−
ns
ns
ns
ns
DD
GS
d(on)
= 10 V, R = 2.7 Ω
g
t
r
(Note 4)
t
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
46
115
1.3
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 23 A
−
V
GS
SD
t
rr
116
488
ns
nC
V
GS
= 0 V, I = 23 A,
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3
NTHL065N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS
200
100
300
Notes:
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1. V = 20 V
DS
2. 250 ms Pulse Test
100
10
1
10
1
5.5 V
150°C
25°C
Notes:
1. 250 ms Pulse Test
−55°C
2. T = 25°C
C
0.1
2
4
6
8
10
0.2
1
10
20
V
DS,
Drain−Source Voltage [V]
V
GS,
Gate−Source Voltage [V]
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.07
0.06
0.05
0.04
1000
100
10
Notes:
Note: T = 25°C
C
1. V = 0 V
GS
2. 250 ms Pulse Test
150°C
V
= 10 V
GS
1
25°C
V
GS
= 20 V
0.1
−55°C
0.01
0.001
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
I
D,
Drain Current [A]
V
SD,
Body Diode Forward Voltage [V]
Figure 3. On−Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Drain Current and Gate Voltage
10
100000
10000
1000
100
Note: I = 23 A
D
C
iss
8
6
V
DS
= 130 V
V
DS
= 400 V
C
oss
Notes:
4
2
1. V = 0 V
2. f = 1 MHz
GS
10
c
c
c
= c + c (c = shorted)
gs gd ds
iss
C
rss
1
= c + c
oss
rss
ds
gd
= c
gd
0
0.1
0
20
40
60
80
100
0.1
1
10
100
1000
V
DS,
Drain−Source Voltage [V]
Q
g,
Total Gate Charge [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTHL065N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
2.5
Notes:
Notes:
1. V = 10 V
1. V = 0 V
GS
GS
2. I = 23 A
D
2. I = 15 mA
D
2.0
1.5
1.0
0.5
0.0
−50
0
50
100
150
−50
0
50
100
150
T , Junction Temperature [5C]
J
T , Junction Temperature [5C]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation vs.
Temperature
50
40
30
20
10
0
500
30 ms
100
10
1
100 ms
1 ms
10 ms
Operation in This Area
DC
is Limited by R
Notes:
DS(on)
1. T = 25°C
C
2. T = 150°C
J
3. Single Pulse
0.1
1
10
100
1000
25
50
75
100
125
150
V , Drain−Source Voltage
DS
T , Case Temperature [5C]
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs.
Case Temperature
25
20
15
10
5
0
0
130
260
390
520
650
V , Drain to Source Voltage
DS
Figure 11. Eoss vs. Drain to Source Voltage
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5
NTHL065N65S3F
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
Notes:
(t) = r(t) × R
Z
q
q
JC
JC
R
q
= 0.37°C/W
JC
Peak T = P
Duty Cycle, D = t / t
× Z (t) + T
q
JC C
J
DM
SINGLE PULSE
1
2
0.001
−5
10
−4
10
−3
10
−2
10
−1
10
100
101
102
t, Rectangular Pulse Duration (sec)
Figure 12. Transient Thermal Response Curve
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6
NTHL065N65S3F
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTHL065N65S3F
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CH
ISSUE A
DATE 09 OCT 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13853G
TO−247−3LD
PAGE 1 OF 1
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