NTHL040N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L;
| 型号： | NTHL040N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, TO-247-3L |
| 文件： | 总8页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
40 mohm, 1200ꢀV, M3S,
TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
54 mW @ 18 V
54 A
N−CHANNEL MOSFET
D
NTHL040N120M3S
Features
• Typ. R
= 40 mW @ V = 18 V
GS
DS(on)
G
• Ultra Low Gate Charge (Q
= 75 nC)
G(tot)
• High Speed Switching with Low Capacitance (C = 80 pF)
• 100% Avalanche Tested
oss
S
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• UPS (Uninterruptible Power Supplies)
• Energy Storage Systems
• SMPS (Switch Mode Power Supplies)
TO−247−3LD
CASE 340CX
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
V
DSS
MARKING DIAGRAM
Gate−to−Source Voltage
V
GS
−10/+22
−3/+18
V
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
Steady
State
T
C
Continuous Drain
Current (Notes 1, 3)
I
D
54
231
38
A
W
A
HL040N
120M3S
AYWWZZ
Power Dissipation
(Note 1)
P
D
D
Steady
State
T
C
= 100°C
Continuous Drain
Current (Notes 1, 3)
I
D
Power Dissipation
(Note 1)
P
115
134
W
A
HL040N120M3S = Specific Device Code
Pulsed Drain Current
(Note 2)
T
C
= 25°C
I
DM
A
Y
= Assembly Location
= Year
WW = Work Week
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
A
J
stg
ZZ
= Lot Traceability
Source Current (Body Diode)
I
S
45
T
C
= 25°C, V = −3 V
GS
Single Pulse Drain−to−Source Avalanche
E
143
260
mJ
°C
AS
ORDERING INFORMATION
Energy (Note 4)
Device
Package
Shipping
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
T
L
NTHL040N120M3S
TO−247−3L
30 Units /
Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. The maximum current rating is based on typical R
performance.
AS
DS(on)
4. EAS of 143 mJ is based on starting T = 25°C; L = 1 mH, I = 16.9 A,
J
V
= 100 V, V = 18 V.
GS
DD
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2023 − Rev. 0
NTHL040N120M3S/D
NTHL040N120M3S
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.65
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
q
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.3
V/°C
(BR)DSS
J
(Note 6)
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−
−
−
−
100
1
mA
mA
DSS
GS
J
V
= 1200 V
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 10 mA
2.04
−3
−
2.9
−
4.4
+18
54
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
V
GOP
Drain−to−Source On Resistance
V
= 18 V, I = 20 A, T = 25°C
40
80
mW
DS(on)
GS
D
J
V
= 18 V, I = 20 A, T = 175°C
−
−
GS
D
J
(Note 6)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 20 A (Note 6)
−
16
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
1700
80
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
(Note 6)
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
7
Q
V
= −3/18 V, V = 800 V,
D
75
nC
G(TOT)
GS
DS
I
= 20 A (Note 6)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
4.4
14
G(TH)
Q
GS
GD
Q
22
R
f = 1 MHz
3.8
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= −3/18 V, V = 800 V,
−
−
−
−
−
−
−
13
32
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 20 A, R = 4.7 W
D
G
Rise Time
t
r
Inductive load (Notes 5, 6)
Turn−Off Delay Time
t
37
d(OFF)
Fall Time
t
f
11
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
412
74
mJ
E
OFF
E
tot
486
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
= −3 V, T = 25°C (Note 6)
−
−
−
−
−
45
134
−
A
V
SD
GS
C
Current
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 20 A, T = 25°C
4.5
SD
SD
J
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2
NTHL040N120M3S
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
S
= −3/18 V, I = 20 A,
−
−
−
−
−
−
17
81
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
SD
dI /dt = 1000 A/ms, V = 800 V
DS
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
(Note 6)
E
6.7
9.3
9.5
7.7
REC
RRM
I
T
A
ns
ns
Discharge Time
T
B
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. E /E
result is with body diode.
ON OFF
6. Defined by design, not subject to production test.
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3
NTHL040N120M3S
Typical Characteristics
120
90
2.0
V
GS
= 15 V to 20 V
V
GS
= 20 V to 15 V
12 V
1.5
12 V
60
1.0
30
0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
5
5
30
60
90
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
500
400
300
200
I
D
= 20 A
I
= 20 A
= 18 V
D
V
GS
1.5
1.0
T = 25°C
J
T = 150°C
J
0.5
0
100
0
−75 −50 −25
0
25 50 75 100 125 150 175 200
10
15
20
T , JUNCTION TEMPERATURE (°C)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
J
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
80
60
40
500
400
300
200
Etot
R
= 4.7 W
V
= 10 V
G
DS
V
DD
V
GS
= 800 V
= 18/−3 V
Eon
T = 175°C
J
T = 25°C
J
20
0
Eoff
100
0
T = −55°C
J
2
6
10
14
18
10
15
20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
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NTHL040N120M3S
Typical Characteristics
500
400
300
200
300
R
= 4.7 W
= 20 A
= 18/−3 V
V
= 800 V
= 10 A
= 18/−3 V
G
DD
Etot
I
D
I
D
Etot
Eon
250
200
150
100
V
GS
V
GS
Eon
Eoff
100
0
Eoff
50
0
600
650
700
750
800
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R , GATE RESISTANCE (W)
G
Figure 7. Switching Loss vs. Drain−to−Source
Figure 8. Switching Loss vs. Gate Resistance
Voltage
400
300
200
300
100
V
GS
= −3 V
R
= 4.7 W
= 10 A
= 800 V
= 18/−3 V
G
I
D
Etot
Eon
V
DD
V
GS
T = 175°C
J
10
1
T = 25°C
J
100
0
Eoff
T = −55°C
J
25
50
75
100
125
150
175
0
2
4
6
8
10
TEMPERATURE (°C)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Switching Loss vs. Temperature
Figure 10. Reverse Drain Current vs. Body
Diode Forward Voltage
18
10K
1K
V
DD
= 400 V
V
I
D
= 20 A
C
15
12
ISS
= 800 V
DD
9
6
3
C
C
OSS
V
= 600 V
100
DD
RSS
10
1
V
= 0 V
GS
0
f = 1 MHz
−3
0
10
20
30
40
50
60
70
80
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
800
Q , GATE CHARGE (nC)
V
G
Figure 11. Gate−to−Source Voltage vs. Total
Figure 12. Capacitance vs. Drain−to−Source
Charge
Voltage
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5
NTHL040N120M3S
Typical Characteristics
100
50
40
30
20
25°C
V
GS
= 18 V
150°C
10
R
= 0.65°C/W
q
JC
10
0
1
0.0001
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
T , AVALANCHE TIME (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
20K
10K
1000
100
10
R
= 0.65°C/W
q
JC
T = Max Rated
J
Single Pulse
10 ms
T
C
= 25°C
100 ms
1 ms
1K
1
10 ms
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
100 ms/DC
0.01
100
0.00001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 15. Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
2
1
0.5 Duty Cycle
0.2
0.1
0.1
0.05
0.02
P
DM
Notes:
= 0.65°C/W
R
q
JC
0.01
Peak T = P
x Z (t) + T
q
JC C
t
1
J
DM
Duty Cycle, D = t / t
1
2
t
2
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 17. Junction−to−Case Transient Thermal Response
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NTHL040N120M3S
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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7
NTHL040N120M3S
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