NTHL067N65S3H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 40 A, 67 mΩ, TO-247;
| 型号： | NTHL067N65S3H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 40 A, 67 mΩ, TO-247 |
| 文件： | 总11页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power,
N-Channel, SUPERFET) III,
FAST
650 V, 67 mW, 40 A
NTHL067N65S3H
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on- resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
67 mW @ 10 V
40 A
D
Consequently, SUPERFET III MOSFET FAST series helps
minimize various power systems and improve system efficiency.
Features
• 700 V @ T = 150°C
J
G
• Typ. R
= 55 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 80 nC)
g
S
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 691 pF)
oss(eff.)
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
G
D
S
TO−247 Long Leads
CASE 340CX
MARKING DIAGRAM
T067N
65S3H
AYWWZZ
T067N65S3H
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
March, 2021 − Rev. 2
NTHL067N65S3H/D
NTHL067N65S3H
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
40
A
C
− Continuous (T = 100°C)
25
C
I
Drain Current
− Pulsed (Note 1)
112
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
422
AS
AS
I
6.5
E
2.66
120
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
266
W
W/°C
°C
D
C
− Derate Above 25°C
2.13
−55 to +150
260
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 6.5 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 20 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.47
40
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NTHL067N65S3H
T067N65S3H
TO−247
Tube
N/A
30 Units
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2
NTHL067N65S3H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25_C
0.63
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
= 650 V, V = 0 V
−
−
−
−
1.6
−
2
mA
DSS
DS
GS
V
DS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
V
GS
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 3.9 mA
2.4
−
−
4.0
67
−
V
mW
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
= 10 V, I = 20 A
55
28
GS
DS
D
g
FS
V
= 20 V, I = 20 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
−
−
−
−
−
3750
60
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
= 0 V to 400 V, V = 0 V
691
107
80
oss(eff.)
DS
GS
C
V
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
V
= 400 V, I = 20 A, V = 10 V
g(tot)
DS
D
GS
(Note 4)
Q
21
gs
Q
20
gd
ESR
f = 1 MHz
0.6
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 20 A,
−
−
−
−
29
8.5
80
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
V
= 10 V, R = 4.7 W
g
t
r
(Note 4)
t
d(off)
t
f
2.6
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
40
112
1.2
A
A
V
S
I
SM
V
SD
Source to Drain Diode Forward
Voltage
V = 0 V, I = 20 A
GS SD
t
Reverse Recovery Time
V
DD
= 400 V, I = 20 A,
F
−
−
403
7.4
−
−
ns
rr
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTHL067N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1000
100
80
7.0 V
250 ms Pulse Test
250 ms Pulse Test
6.0 V
5.5 V
T
C
= 25°C
V
DS
= 20 V
100
10 V
60
5.0 V
40
10
1
4.5 V
T = 25°C
J
20
0
V
= 4.0 V
GS
T = −55°C
T = 150°C
J
J
0
5
10
15
20
2
0
0
3
4
5
6
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
= 25°C
Figure 2. Transfer Characteristics
1000
100
0.15
0.10
V
= 0 V
250 ms Pulse Test
T
GS
C
V
V
= 10 V
10
1
GS
= 20 V
GS
0.05
0
T = 150°C
J
T = 25°C
T = −55°C
J
J
0.1
0
20
40
60
80
0.2
, BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
V
D
Figure 3. On−Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Drain Current and Gate Voltage
6
10
10
8
C
C
C
= C + C (C = shorted)
gs gd ds
V
= 0 V
f = 250 KHz
iss
GS
I
D
= 20 A
5
V
= 130 V
= C + C
DD
oss
rss
ds
gd
10
= C
gd
4
10
C
iss
V
DD
= 400 V
3
6
10
2
C
oss
10
4
1
10
C
rss
2
0
0
10
−1
10
0
100
200
300
400
500
600
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTHL067N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 20 A
GS
GS
D
2.5
2.0
1.5
1.0
D
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
1000
100
10
50
40
30
20
10 ms
100 ms
Operation in this
Area is Limited
1 ms
by R
DS(on)
1
10
0
T
= 25°C
C
10 ms
100
DC
T = 150°C
J
Single Pulse
0.1
1
10
1000
25
50
75
100
125
150
V
DS
, DRAIN−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
15
10
5
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTHL067N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
Z
q
(t) = r(t) x R
q
JC
JC
0.01
R
= 0.47°C/W
q
JC
Peak T = P
Duty Cycle, D = t /t
x Z (t) + T
q
JC C
t
J
DM
1
Single Pulse
0.00001
t
1
2
2
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Impedance
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6
NTHL067N65S3H
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTHL067N65S3H
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Components
Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
8
NTHL067N65S3H
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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9
NTHL067N65S3H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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