NTHL1000N170M1 [ONSEMI]
Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L;
| 型号： | NTHL1000N170M1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L |
| 文件： | 总8页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
MOSFET - EliteSiC,
960 mohm, 1700 V, M1,
TO-247-3L
V
R
TYP
I MAX
D
(BR)DSS
DS(ON)
1700 V
960 mW @ 20 V
4.2 A
D
NTHL1000N170M1
Features
Typ. R
G
(pin 1)
= 960 mW
DS(on)
Ultra Low Gate Charge (typ. Q
Low Effective Output Capacitance (typ. C = 11 pF)
100% Avalanche Tested
RoHS Compliant
= 14 nC)
G(tot)
S
oss
N−CHANNEL MOSFET
Typical Applications
Solar Inverters
Electric Vehicle Charging Stations
Electric Storing Systems
SMPS (Switch Mode Power Supplies)
UPS (Uninterruptible Power Supplies)
G
D
S
TO−247−3LD
CASE 340CX
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1700
Unit
V
V
DSS
MARKING DIAGRAM
Gate−to−Source Voltage
V
GS
−15/+25
−5/+20
V
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175C
= 25C
V
GSop
V
C
Continuous Drain
Current (Note 1)
Steady
State
T
I
D
4.2
48
3
A
W
A
C
AYWWZZ
HL1000
N170M1
Power Dissipation
(Note 1)
P
D
Continuous Drain
Current (Note 1)
Steady
State
T
C
= 100C
I
D
Power Dissipation
(Note 1)
P
24
14
W
A
D
A
Y
= Assembly Location
= Year
Pulsed Drain Current
(Note 2)
T
C
= 25C
I
DM
WW = Work Week
ZZ = Lot Traceability
HL1000N170M1 = Specific Device Code
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
C
stg
Source Current (Body Diode)
I
9.5
24
A
S
Single Pulse Drain−to−Source Avalanche
Energy (Note 3)
E
AS
mJ
ORDERING INFORMATION
Maximum Lead Temperature for Soldering
T
270
C
Device
Package
Shipping
L
(1/25 from case for 10 s)
NTHL1000N170M1
TO−247−3L
30 Units /
Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 24 mJ is based on starting T = 25C; L = 1 mH, I = 6.9 A,
AS
DD
J
AS
V
= 120 V, V = 20 V.
GS
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2023 − Rev. 3
NTHL1000N170M1/D
NTHL1000N170M1
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Case − Steady State (Note 1)
R
3.1
C/W
q
JC
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
1700
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, referenced to 25C
D
0.5
V/C
(BR)DSS
(Note 4)
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25C
100
1
mA
mA
mA
DSS
GS
J
V
= 1700 V
T = 175C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
GS
= +25/−15 V, V = 0 V
1
GSS
DS
V
R
V
= V , I = 640 mA
1.8
3.2
4.3
+20
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−5
GOP
V
= 20 V, I = 2 A, T = 25C
960
1430
mW
DS(on)
GS
D
J
V
GS
= 20 V, I = 2 A, T = 175C
1800
D
J
(Note 4)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 2 A (Note 4)
0.6
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE (Note 4)
Input Capacitance
C
V
GS
= 0 V, f = 1 MHz, V = 1000 V
150
11
pF
ISS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
0.6
14
Q
V
GS
= −5/20 V, V = 800 V,
nC
G(TOT)
DS
I
= 2 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
1.5
2.6
7.5
5.7
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS (Notes 4, 5)
Turn−On Delay Time
t
V
= −5/20 V,
5.6
30
ns
d(ON)
GS
V
= 800 V,
= 2 A,
= 25 W
DS
D
G
Rise Time
t
r
I
R
Turn−Off Delay Time
t
11
d(OFF)
inductive load
Fall Time
t
f
84
L = 300 mH
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
120
11
mJ
ON
E
OFF
E
131
tot
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
= −5 V, T = 25C
9.5
48
A
SD
J
Current (Note 1)
Pulsed Drain−Source Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= −5 V, I = 2 A, T = 25C
4.2
5.9
11
V
SD
SD
J
t
V
= −5/20 V, I = 2 A,
ns
nC
RR
GS
SD
dI /dt = 1000 A/ms (Note 4)
S
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Defined by design, not subject to production test.
5. E /E
result is with body diode.
ON OFF
www.onsemi.com
2
NTHL1000N170M1
TYPICAL CHARACTERISTICS
8
7
8
V
GS
= 20 V
18 V
16 V
V
GS
= 20 V
7
6
5
4
3
2
18 V
16 V
6
5
4
3
2
14 V
14 V
10 V
T
C
= 25C
T
C
= −55C
10 V
1
0
1
0
0
2
4
6
8
10 12 14
16 18 20
0
2
4
6
8
10 12 14
16 18 20
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
2.5
2.0
1.5
8
7
V
= 20 V
GS
V
GS
= 10 V
14 V
18 V
6
5
4
3
2
16 V
14 V
10 V
16 V
18 V
20 V
1.0
0.5
T
C
= 175C
1
0
0
2
4
6
8
10 12 14
16 18 20
0
2
4
6
8
I , DRAIN CURRENT (A)
D
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 3. On−Region Characteristics
Figure 4. Normalized On−Resistance vs. Drain
Current and Gate Voltage
5
4
3
2
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
T = 25C
I = 2 A
D
J
I
V
= 2 A
D
= 20 V
GS
T = 150C
J
1
0
0.9
0.8
0.7
−75 −50 −25
0
25 50 75 100 125 150 175
8
9
10 11 12 13 14 15 16 17 18 19 20
V , GATE−TO−SOURCE VOLTAGE (V)
GS
T , JUNCTION TEMPERATURE (C)
J
Figure 5. Normalized On−Resistance Variation
Figure 6. On−Resistance vs. Gate−to−Source
with Temperature
Voltage
www.onsemi.com
3
NTHL1000N170M1
TYPICAL CHARACTERISTICS
240
8
6
4
V
R
= 800 V
= 25 W
= −5 V/20 V
= 25C
V
= 20 V
DD
DS
Etot
Eon
G
200
160
120
80
V
T
GS
C
T = 175C
J
T = 25C
J
2
0
40
0
T = −55C
J
Eoff
2
3
4
5
2
4
6
8
10
12
14
16
18
20
I , DRAIN CURRENT (A)
D
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 8. Switching Loss vs. Drain Current
Figure 7. Transfer Characteristics
240
200
160
120
80
160
120
80
Etot
Eon
V
R
= 800 V
= 25 W
= −5 V/20 V
= 125C
Etot
DD
G
V
GS
Eon
T
C
V
= 800 V
= 2 A
= −5 V/20 V
= 25C
DD
I
D
V
GS
T
C
40
0
40
0
Eoff
Eoff
2
3
4
5
25
30
35
40
45
50
I , DRAIN CURRENT (A)
D
R , GATE RESISTANCE (W)
G
Figure 9. Switching Loss vs. Drain Current
Figure 10. Switching Loss vs. Gate Resistance
50
10
20
15
10
5
V
DD
= 400 V
I
D
= 2 A
V
GS
= −5 V
175C
V
DD
= 800 V
25C
−55C
V
DD
= 600 V
1
0
0.1
−5
0
1
2
3
4
5
6
7
8
9
10 11 12
0
3
6
9
12
15
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 11. Reverse Drain Current vs. Body
Diode Forward Voltage
Figure 12. Gate−to−Source Voltage vs. Total
Charge
www.onsemi.com
4
NTHL1000N170M1
TYPICAL CHARACTERISTICS
1000
100
10
C
ISS
T = 25C
J
C
OSS
10
1
V
= 0 V
GS
f = 1 MHz
C
RSS
1
0.001
0.01
0.1
0.1
1
10
100
1000
T , TIME IN AVALANCHE (ms)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Capacitance vs. Drain−to−Source
Figure 14. Unclamped Inductive Switching
Capability
Voltage
50
10
5
4
3
2
This Area is Limited
by R
DS(on)
10 ms
R
= 3.1C/W
q
JC
V
GS
= 20 V
Single Pulse
100 ms
T
C
= 25C
1
1 ms
R
= 3.1C/W
q
JC
0.1
1
0
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms/DC
0.01
25
50
75
100
125
150
175
0.1
1
10
100
1000 5000
T , CASE TEMPERATURE (C)
C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 15. Maximum Continuous Drain
Current vs. Case Temperature
Figure 16. Maximum Rated Forward Biased
Safe Operating Area
10K
R
= 3.1C/W
q
JC
Single Pulse
T
C
= 25C
1K
100
10
0.00001 0.0001 0.001
0.01
0.1
1
t, PULSE WIDTH (s)
Figure 17. Single Pulse Maximum Power
Dissipation
www.onsemi.com
5
NTHL1000N170M1
5
1
50% Duty Cycle
20%
10%
5%
2%
0.1
P
DM
Notes:
= 3.1C/W
1%
R
q
JC
Single Pulse
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
J
DM
t
1
1
2
t
2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 18. Transient Thermal Impedance
ESD RATINGS
ESD Test
Classification
Standard
ESD−HBM
0B (125 V to <250 V)
C3 (>1000 V)
ANSI/ESDA/JEDEC JS−001
ANSI/ESDA/JEDEC JS−002
ESD−CDM
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明