NTLJD4150P [ONSEMI]
Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package; 功率MOSFET -30 V， -3.4 A， uCool TM双P沟道， 2×2毫米的WDFN封装
| 型号： | NTLJD4150P |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -30 V, -3.4 A, uCool TM Dual P-Channel,2x2 mm WDFN Package |
| 文件： | 总7页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLJD4150P
Power MOSFET
−30 V, −3.4 A, mCoolt Dual P−Channel,
2x2 mm WDFN Package
Features
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• WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
R
DS(on)
Max
I
Max (Note 1)
D
V
(BR)DSS
• Footprint Same as SC−88 Package
135 mW @ 10 V
200 mW @ 4.5 V
−30 V
−3.4 A
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• Bidirectional Current Flow with Common Source Configuration
• This is a Pb−Free Device
S1
S2
Applications
• Li−Ion Battery Charging and Protection Circuits
• LED Backlight, Flashlight
• Dual−High Side Load Switch
G1
G2
D1
D2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
P−CHANNEL MOSFET P−CHANNEL MOSFET
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
−30
20
V
V
A
DSS
MARKING
DIAGRAM
D2
D1
Gate−to−Source Voltage
V
GS
Continuous Drain Current
(Note 1)
I
D
T = 25°C
−2.7
−2.0
−3.4
1.5
A
Steady
State
1
2
3
6
5
4
JE M G
T = 85°C
A
WDFN6
G
CASE 506AN
Pin 1
t ≤ 5 s
T = 25°C
A
Power Dissipation
(Note 1)
P
W
Steady
State
D
D
JE
M
G
= Specific Device Code
= Date Code
T = 25°C
A
t ≤ 5 s
2.3
−1.8
−1.4
0.7
= Pb−Free Package
Continuous Drain Current
(Note 2)
I
A
T = 25°C
A
D
(Note: Microdot may be in either location)
T = 85°C
A
Steady
State
Power Dissipation
(Note 2)
P
W
PIN CONNECTIONS
D1
T = 25°C
A
Pulsed Drain Current
t = 10 ms
p
I
−14
A
DM
S1
G1
D2
D1
G2
S2
1
2
3
6
5
4
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
T
STG
Source Current (Body Diode) (Note 2)
I
−1.8
260
A
S
D2
Lead Temperature for Soldering Purposes
T
°C
L
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Top View)
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
ORDERING INFORMATION
†
Device
NTLJD4150PTBG
Package
Shipping
WDFN6
3000 / Tape &
Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
©
Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
January, 2007 − Rev. 0
NTLJD4150P/D
NTLJD4150P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
SINGLE OPERATION (SELF−HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
83
177
54
q
JA
q
JA
q
JA
R
R
°C/W
DUAL OPERATION (EQUALLY HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
q
JA
R
q
JA
R
q
JA
58
133
40
°C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = −250 mA
−30.0
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
(BR)DSS
I
= −250 mA, Ref to 25°C
1.9
mV/°C
J
D
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
−5.0
100
mA
DSS
J
V
= −24 V, V = 0 V
GS
DS
T = 85°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V =
GS
20 V
nA
GSS
DS
V
V
= V , I = −250 mA
−1.0
−1.5
0.4
−2.0
V
GS(TH)
GS
DS
D
Gate Threshold
Temperature Coefficient
V
/T
mV/°C
GS(TH)
J
Drain−to−Source On−Resistance
Forward Transconductance
R
V
= −10 V, I = −4.0 A
95
156
1.5
135
200
mW
mW
S
DS(on)
GS
GS
D
V
= −4.5 V, I = −3.0 A
D
g
FS
V
= −10 V, I = −1.0 A
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
300
50
pF
nC
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = −15 V
DS
GS
30
Q
3.6
4.5
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
0.44
0.79
1.54
10.6
G(TH)
V
=−4.5 V, V = −15 V, I = −2.0 A
DS D
GS
Q
GS
GD
Q
R
G
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
7.0
16.2
11.8
8.8
ns
d(ON)
Rise Time
t
r
V
= −4.5 V, V = −24 V,
DD
GS
I
= −3.0 A, R = 2 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTLJD4150P
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
T = 25°C
−0.85
−0.77
8.9
−1.0
SD
J
V
= 0 V,
= −2.0 A
GS
V
I
S
T = 85°C
J
Reverse Recovery Time
Charge Time
t
RR
t
6.2
ns
a
V
= 0 V, d /d = 100 A/ms,
ISD t
GS
I = −2.0 A
S
Discharge Time
t
2.9
b
Reverse Recovery Time
Q
3.0
nC
RR
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTLJD4150P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
10
8
−6 V
−4.8 V
T = 25°C
−10V
to
−7V
J
V
≥ 10 V
DS
9
8
7
6
5
4
3
7
6
5
4
3
2
−4.6 V
−4.2 V
−3.8 V
−3.4 V
T = 125°C
J
−3.0 V
−2.6 V
T = 85°C
J
2
1
T = 25°C
J
1
0
T = −55°C
J
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8
1
2
3
4
5
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.20
0.18
0.16
0.14
0.12
0.10
0.08
1.0
0.9
0.8
0.7
0.6
0.5
0.4
V
= −10 V
T = 25°C
GS
J
T = 125°C
J
T = 85°C
J
V
= −4.5 V
GS
0.3
0.2
0.1
0
T = 25°C
J
V
= −10 V
9
GS
0.06
0.04
T = −55°C
J
1.0
2.0
3.0
4.0
1
2
3
4
5
6
7
8
10
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1000
100
V = 0 V
GS
I
V
= −3.0 A
D
= −10 V
GS
T = 125°C
J
T = 100°C
J
10
1
T = 85°C
J
0.8
0.7
0.1
−50
−25
0
25
50
75
100 125
150
0
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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4
NTLJD4150P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
500
400
300
200
6
20
16
12
8
V
= 0 V
GS
QT
T = 25°C
V
J
DS
5
4
C
iss
Q
Q
V
GS
GD
GS
3
2
C
oss
100
0
4
0
1
0
I
= −3.0 A
D
T = 25°C
J
C
rss
0
5
10
15
20
25
30
0 0.20.40.60.8 1 1.21.41.61.8 2 2.22.42.62.8 3 3.23.43.6
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
100
10
1
4
3
2
V
I
V
= −24 V
= −3.0 A
= −4.5 V
V
= 0 V
GS
DD
T = 25°C
D
J
GS
t
r
t
d(off)
t
f
t
d(on)
1
0
1
10
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
R , GATE RESISTANCE (OHMS)
G
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
10
10 ms
100 ms
1 ms
1
10 ms
*See Note 2 on Page 1
= 25°C
T
C
T = 150°C
J
0.1
SINGLE PULSE
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
NTLJD4150P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1000
100
D = 0.5
0.2
0.1
*See Note 2 on Page 1
10
P
(pk)
0.05
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
1
t
1
T
− T = P
R (t)
q
JA
J(pk)
A
(pk)
t
2
SINGLE PULSE
0.00001 0.0001
DUTY CYCLE, D = t /t
1
2
0.1
0.000001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 12. Thermal Response
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6
NTLJD4150P
PACKAGE DIMENSIONS
WDFN6 2x2
CASE 506AN−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
E
MILLIMETERS
PIN ONE
REFERENCE
DIM
A
MIN
0.70
0.00
MAX
0.80
0.05
A1
A3
b
0.20 REF
2X
0.10
C
0.25
0.35
D
2.00 BSC
D2
E
0.57
2.00 BSC
0.77
2X
0.10
C
E2
e
0.90
1.10
0.65 BSC
0.25 REF
0.20 0.30
0.15 REF
K
A3
L
0.10
C
J
A
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
6X
0.08
C
A1
D2
SEATING
C
PLANE
6X
2.30
D2
6X
0.35
0.43
4X
e
6X
L
1
3
1
0.65
PITCH
2XE2
6
4
6X
0.25
K
b
6X
0.10
0.05
C
C
A
B
6X J
2X
NOTE 3
BOTTOM VIEW
0.72
1.05
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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NTLJD4150P/D
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