NTMFD4901NFT3G [ONSEMI]
Dual N-Channel Power MOSFET;
| 型号： | NTMFD4901NFT3G |
| 厂家： | 
ONSEMI |
| 描述： | Dual N-Channel Power MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFD4901NF
Dual N-Channel Power
MOSFET with Integrated
Schottky
30 V, High Side 18 A / Low Side 30 A, Dual
N−Channel SO8FL
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V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Features
6.5 mW @ 10 V
10 mW @ 4.5 V
2.35 mW @ 10 V
3.5 mW @ 4.5 V
Q1 Top FET
30 V
• Co−Packaged Power Stage Solution to Minimize Board Space
• Low Side MOSFET with Integrated Schottky
• Minimized Parasitic Inductances
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
18 A
30 A
Q2 Bottom
FET
30 V
D1
(2, 3, 4, 9)
Applications
• DC−DC Converters
• System Voltage Rails
• Point of Load
(1) G1
S1/D2 (10)
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
5 S2
6 S2
7 S2
8 G2
D1 3
D1 2
G1 1
9
D1
10
S1/D2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
CASE 506BX
4901NF
AYWZZ
1
4901NF = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2014 − Rev. 6
NTMFD4901NF/D
NTMFD4901NF
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage
Gate−to−Source Voltage
Gate−to−Source Voltage
Q1
Q2
Q1
Q2
Q1
V
30
V
DSS
V
20
V
GS
Continuous Drain Current R
(Note 1)
T = 25°C
I
D
13.5
9.7
q
JA
A
T = 85°C
A
A
T = 25°C
A
Q2
23.4
16.9
1.90
2.07
18.2
13.1
30.3
21.8
3.45
3.45
10.3
7.4
T = 85°C
A
Power Dissipation R
(Note 1)
T = 25°C
A
Q1
Q2
Q1
P
W
q
D
D
D
JA
Continuous Drain Current R
≤ 10 s (Note 1)
T = 25°C
A
I
D
q
JA
T = 85°C
A
A
T = 25°C
A
Q2
Steady
State
T = 85°C
A
Power Dissipation R
≤ 10 s (Note 1)
T = 25°C
A
Q1
Q2
Q1
P
I
W
q
JA
Continuous Drain Current R
(Note 2)
T = 25°C
A
q
D
JA
T = 85°C
A
A
T = 25°C
A
Q2
17.9
12.9
1.10
1.20
60
T = 85°C
A
Power Dissipation R
(Note 2)
T = 25 °C
A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
P
W
A
q
JA
Pulsed Drain Current
T = 25°C
I
DM
A
t = 10 ms
p
100
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T , T
J
−55 to +150
°C
A
STG
I
S
3.4
4.9
6
dV/dt
EAS
EAS
V/ns
mJ
Single Pulse Drain−to−Source Avalanche Energy (T = 25C, V
24 A
48 A
Q1
Q2
28.8
115
260
J
DD
= 50 V, V = 10 V, I = XX A , L = 0.1 mH, R = 25 W)
GS
L
pk
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
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2
NTMFD4901NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
FET
Q1
Q2
Q1
Q2
Q1
Q2
Symbol
Value
65.9
60.5
113.2
104
Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
q
q
JA
JA
JA
Junction−to−Ambient – Steady State (Note 4)
R
R
°C/W
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
36.2
36.2
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Break-
down Voltage
Q1
Q2
Q1
Q2
Q1
V
30
30
V
V
= 0 V, I = 250 mA
(BR)DSS
GS
D
V
= 0 V, I = 1 mA
D
GS
Drain−to−Source Break-
down Voltage Temperature
Coefficient
V
18
15
mV /
°C
(BR)DSS
/ T
J
Zero Gate Voltage Drain
Current
I
V
V
= 0 V,
= 24 V
T = 25°C
J
1
mA
DSS
GS
DS
T = 125°C
J
10
Q2
V
V
= 0 V,
= 24 V
T = 25°C
J
500
GS
DS
Gate−to−Source Leakage
Current
Q1
Q2
I
V
= 0 V, VDS = 20 V
100
100
nA
V
GSS
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Q1
V
V
= V , I = 250 mA
1.2
1.2
2.2
2.2
GS(TH)
GS
DS
D
Q2
Q1
Q2
Q1
Negative Threshold Temper-
ature Coefficient
V
/
4.5
4.0
5.2
8.0
1.9
2.8
28
mV /
°C
GS(TH)
T
J
Drain−to−Source On Resist-
ance
R
V
= 10 V
= 4.5 V
= 10 V
= 4.5 V
I
D
I
D
I
D
I
D
= 10 A
= 10 A
= 20 A
= 20 A
6.5
10
DS(on)
GS
V
GS
mW
Q2
V
2.35
3.5
GS
GS
V
Forward Transconductance
Q1
Q2
g
V
= 1.5 V, I = 10 A
S
FS
DS
D
45
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFD4901NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
1150
2950
360
1100
105
82
Input Capacitance
C
ISS
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Output Capacitance
Reverse Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 15 V
pF
GS
DS
9.7
Q
G(TOT)
20
1.1
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
2.7
V
GS
= 4.5 V, V = 15 V; I = 10 A
nC
nC
DS
D
3.3
Q
GS
GD
7.3
3.7
Q
5.3
19.1
42.7
Q
V
= 10 V, V = 15 V; I = 10 A
G(TOT)
GS DS D
SWITCHING CHARACTERISTICS (Note 6)
Q1
9.0
14
15
16
14
25
4.0
7.0
Turn−On Delay Time
Rise Time
t
d(ON)
Q2
Q1
Q2
Q1
Q2
Q1
Q2
t
r
V
= 4.5 V, V = 15 V,
DS
GS
ns
I
D
= 10 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SWITCHING CHARACTERISTICS (Note 6)
Q1
6.0
10
14
15
17
32
3.0
5.0
Turn−On Delay Time
Rise Time
t
d(ON)
Q2
Q1
Q2
Q1
Q2
Q1
Q2
t
r
V
= 10 V, V = 15 V,
DS
GS
ns
I
D
= 10 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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4
NTMFD4901NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
1.0
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
T = 25°C
J
0.75
0.62
0.45
0.37
23
V
I
= 0 V,
GS
S
Q1
= 3 A
T = 125°C
J
Forward Voltage
V
SD
V
T = 25°C
0.70
J
V
GS
= 0 V,
= 2 A
Q2
I
S
T = 125°C
J
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Reverse Recovery Time
Charge Time
t
RR
40
12
ta
ns
21
V
= 0 V, d /d = 100 A/ms, I = 3 A
IS t S
GS
11
Discharge Time
tb
19
12
Reverse Recovery Charge
Q
nC
RR
40
PACKAGE PARASITIC VALUES
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.38
0.65
0.054
0.007
1.5
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
L
nH
nH
nH
W
S
D
G
L
T = 25°C
A
L
1.5
0.8
R
G
0.8
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
NTMFD4901NFT1G
Package
Shipping
DFN8
(Pb−Free)
1500 / Tape & Reel
5000 / Tape & Reel
NTMFD4901NFT3G
DFN8
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFD4901NF
TYPICAL CHARACTERISTICS − Q1
40
35
30
25
20
15
10
5
50
3.8 V
3.6 V
3.4 V
3.2 V
V
DS
≥ 5 V
45
40
35
30
25
20
15
10
5
4.5 V
10 V
T = 25°C
J
T = 125°C
J
3.0 V
2.8 V
T = 25°C
J
T = −55°C
J
V
GS
= 2.4 V
0
0
0
1
2
3
4
5
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.010
0.009
0.008
0.007
I
= 10 A
D
T = 25°C
T = 25°C
J
V
V
= 4.5 V
= 10 V
GS
0.006
0.005
0.004
0.003
GS
0.004
0.002
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Resistance
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1,000
1.8
1.6
I
V
= 10 A
D
T = 150°C
J
= 10 V
GS
1.4
1.2
T = 125°C
J
1.0
0.8
0.6
100
10
V
= 0 V
GS
−50 −25
0
25
50
75
100 125
150
0
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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6
NTMFD4901NF
TYPICAL CHARACTERISTICS − Q1
1600
1400
1200
1000
800
11
QT
T = 25°C
GS
J
V
10
9
= 0 V
C
iss
8
7
6
5
C
oss
600
4
Qgs
Qgd
3
2
1
0
400
C
rss
I
= 10 A
200
0
D
T = 25°C
J
0
5
10
15
20
25
30
0
2
4
6
8
10
12 14 16 18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9
1000
100
V
V
= 10 V
= 15 V
= 10 A
V
GS
= 0 V
GS
DD
8
I
D
t
d(off)
7
6
t
r
5
4
10
1
t
d(on)
3
T = 25°C
J
2
t
f
1
0
1
10
R , GATE RESISTANCE (W)
100
0.0 0.1
0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
10 ms
100 ms
1 ms
0 V ≤ V ≤ 20 V
GS
1
0.1
SINGLE PULSE
10 ms
T = 25°C
A
Single Pulse
R
LIMIT
DS(on)
dc
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NTMFD4901NF
TYPICAL CHARACTERISTICS − Q1
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 12. Thermal Response
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8
NTMFD4901NF
TYPICAL CHARACTERISTICS − Q2
50
45
40
35
30
25
20
15
10
5
60
3.4 V
3.2 V
T = 25°C
J
V
DS
≥ 5 V
3.0 V
50
40
30
20
4.5 V
10 V
T = 125°C
J
2.8 V
T = 25°C
J
10
0
V
= 2.4 V
GS
T = −55°C
J
0
0
1
2
3
4
5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 13. On−Region Characteristics
Figure 14. Transfer Characteristics
0.020
0.015
0.0040
0.0035
I
D
= 10 A
T = 25°C
J
0.0030
V
V
= 4.5 V
GS
0.0025
0.0020
0.0015
0.0010
0.010
0.005
0
= 10 V
GS
2
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40
I , DRAIN CURRENT (A)
45 50
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 15. On−Resistance vs. Gate−to−Source
Resistance
Figure 16. On−Resistance vs. Drain Current
and Gate Voltage
1E−2
1E−3
1E−4
1.8
1.6
I
V
= 20 A
= 10 V
D
GS
T = 150°C
J
T = 125°C
J
1.4
1.2
1.0
0.8
0.6
1E−5
1E−6
T = 25°C
J
V
GS
= 0 V
−50 −25
0
25
50
75
100 125
150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 17. On−Resistance Variation with
Temperature
Figure 18. Drain−to−Source Leakage Current
vs. Voltage
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NTMFD4901NF
TYPICAL CHARACTERISTICS − Q2
4000
3500
3000
2500
2000
1500
1000
11
QT
T = 25°C
GS
J
V
10
9
= 0 V
C
iss
8
7
6
5
C
oss
Qgd
10
4
Qgs
3
2
1
0
I
D
= 10 A
500
0
C
rss
T = 25°C
J
0
5
10
15
20
25
30
0
5
15
20
25
30
35
40
45
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 19. Capacitance Variation
Figure 20. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9
1000
100
V
V
I
= 10 V
= 15 V
= 10 A
V
= 0 V
GS
GS
DD
T = 25°C
J
t
8
d(off)
D
7
6
t
r
5
t
4
d(on)
10
1
3
t
f
2
1
0
0.0
1
10
R , GATE RESISTANCE (W)
100
0.1
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.3
0.4
0.5
0.6
0.7
V
G
Figure 21. Resistive Switching Time Variation
vs. Gate Resistance
Figure 22. Diode Forward Voltage vs. Current
1000
100
10
10 ms
100 ms
1 ms
0 V ≤ V ≤ 20 V
GS
1
0.1
SINGLE PULSE
10 ms
T = 25°C
A
Single Pulse
R
LIMIT
DS(on)
dc
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 23. Maximum Rated Forward Biased
Safe Operating Area
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NTMFD4901NF
TYPICAL CHARACTERISTICS − Q2
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 24. Thermal Response
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NTMFD4901NF
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical)
CASE 506BX
ISSUE C
2X
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b AND b1 APPLY TO PLATED FEATURES AND ARE
MEASURED BETWEEN 0.15 AND 0.25 MM FROM TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
D
A
B
E
2X
D1
0.20
C
8
7
6
5
MILLIMETERS
4X
h
E1
PIN ONE
IDENTIFIER
DIM
A
A1
b
b1
c
MIN
0.90
0.00
0.41
0.41
0.23
MAX
1.10
0.05
0.61
0.61
0.33
c
A1
1
2
3
4
D
5.15 BSC
TOP VIEW
D1
D2
E
4.50
3.50
5.10
4.22
0.10
0.10
C
6.15 BSC
E1
E2
E3
e
G
G1
h
5.50
2.27
0.82
1.27 BSC
0.63 BSC
1.72 BSC
6.10
2.67
1.22
DETAIL A
A
C
SEATING
PLANE
NOTE 6
C
NOTE 4
SIDE VIEW
e
DETAIL A
−−−
0.35
12
0.55
_
L
b
8X
DETAIL B
e/2
L
0.10
0.05
C
C
A
B
1
4
E3
NOTE 3
RECOMMENDED
SOLDERING FOOTPRINT*
0.10
REF
DETAIL B
5.35
4X
0.69
E2
PACKAGE
OUTLINE
G1
8X
G
0.64
0.10 C
A
B
8
5
DETAIL C
6X b1
D2
1.97
2.23
NOTE 3
2.68
0.10
C A B
6.48
0.69
DETAIL C
BOTTOM VIEW
1.22
1.27
PITCH
4X
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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