NTMFS010N10GTWG [ONSEMI]
MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A;
| 型号： | NTMFS010N10GTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single, N-Channel, PQFN8, 100V, 10.8mΩ, 83A |
| 文件： | 总7页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, PQFN8
100 V, 10.8 mW, 83 A
Product Preview
NTMFS010N10G
Features
www.onsemi.com
• Wide SOA for Linear Mode Operation
• Low R
to Minimize Conduction Loss
DS(on)
• High Peak UIS Current Capability for Ruggedness
• Small Footprint (5x6 mm) for Compact Design
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
10.8 mW @ 10 V
83 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
N−Channel MOSFET
• 48 V Hot Swap System, Load Switch, Soft Start, E−Fuse
D(5,6,7,8)
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
Parameter
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
(BR)DSS
V
GS
V
Continuous Drain Cur- Steady
rent R (Note 2)
State
T
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
I
83
A
C
D
D
q
JC
T
C
I
58
A
Power Dissipation
(Note 2)
T
C
P
P
I
150
75
W
W
A
D
D
D
R
D
q
JC
T
C
D
D
Continuous Drain Cur- Steady
rent R (Note 1, 2)
State
T
C
11
D
G
S
S
S
q
JA
T
C
I
D
8
A
Pin 1
Bottom
Power Dissipation
(Note 1, 2)
T
C
P
P
3
W
W
A
D
D
R
q
JA
Top
T
C
1.5
1247
PQFN8 5x6
(Power 56)
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
p
CASE 483AE
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
125
226
A
S
Single Pulse Drain−to−Source Avalanche Ener-
E
AS
mJ
gy (I = 38.8 A, L = 0.3 mH)
AV
10N10G
AYWZZ
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8” from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. P0
NTMFS010N10G/D
NTMFS010N10G
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
1.0
50
Unit
Junction−to−Case – Steady State
Junction−to−Ambient – Steady State
°C/W
R
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
V
/ T
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
87.9
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
I
Zero Gate Voltage Drain Current
T = 25°C
1
mA
DSS
J
V
GS
= 0 V, V = 80 V
DS
T = 125°C
J
100
100
I
Gate−to−Source Leakage Current
V
DS
= 0 V, V
=
20 V
nA
GSS
GS
ON CHARACTERISTICS (Note 3)
V
Gate Threshold Voltage
V
= V , I = 164 mA
2.0
3.0
4.0
V
GS(TH)
/ T
GS
DS
D
V
Negative Threshold Temperature
Coefficient
−9.2
mV/°C
GS(TH)
J
I
D
= 164 mA, ref to 25°C
R
Drain−to−Source On Resistance
Forward Transconductance
Gate−Resistance
V
= 10 V, I = 31 A
8.6
21
10.8
mW
S
DS(on)
GS
D
g
V
= 5 V, I = 31 A
FS
DS
D
R
V
= 0 V, f = MHz
0.52
W
G
GS
CHARGES & CAPACITANCES
C
Input Capacitance
3950
430
60
pF
nC
ISS
OSS
RSS
C
C
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
= 0 V, f = 1 MHz, V = 50 V
GS
DS
Q
58.5
22
G(TOT)
Q
Gate−to−Source Charge
Gate−to−Drain Charge
Output Charge
V
GS
= 10 V, V = 50 V, I = 31 A
GS
DS
D
Q
14
GD
Q
V
GS
= 0 V, V = 50 V
41
OSS
DD
SWITCHING CHARACTERISTICS (Note 3)
t
Turn−On Delay Time
Rise Time
23
14
34
9
ns
d(ON)
t
r
V
GS
= 10 V, V = 50 V, I = 31 A,
DS D
R
= 4.7 W
G
t
Turn−Off Delay Time
Fall Time
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Forward Diode Voltage
0.83
0.7
36
1.2
V
T = 25°C
J
SD
J
V
= 0 V, I = 31 A
S
GS
T = 125°C
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
ns
RR
V
= 0 V, dI /dt = 300 A/ms,
S
GS
GS
I
= 15 A
S
Q
147
24
RR
RR
t
V
= 0 V, dI /dt = 1000 A/ms,
S
I
= 15 A
S
Q
288
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS010N10G
TYPICAL CHARACTERISTICS
150
150
140
130
120
110
100
90
V
DS
= 10 V
140
130
120
110
100
90
10 V
12 V
9 V
V
15 V
=
GS
9.5 V
8.5 V
8 V
T = 25°C
J
80
70
60
80
70
60
7.5 V
7 V
T = 150°C
J
50
40
30
20
10
0
6.5 V
6 V
5.5 V
5 V
50
40
30
20
10
0
T = −55°C
J
.
4.5 V
0
1
2
V , GATE−TO−SOURCE VOLTAGE (V)
GS
3
4
5
6
7
8
9
10
0
1
2
3
4
5
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
20
18
16
14
12
10
8
T = 25°C
I
= 31 A
45
40
35
30
25
20
15
10
5
J
D
V
GS
= 10 V
T = 25°C
J
6
0
4
10
30
50
70
90
110
130 150
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance versus Drain Current
Voltage
and Gate Voltage
2
1.8
1.6
1.4
1.2
1
100000
10000
1000
100
I
V
= 31 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.8
0.6
0.4
10
T = 25°C
J
1
5
−50 −25
0
25
50
75
100 125 150 175
15
25
, BODY DIODE FORWARD VOLTAGE (V)
SD
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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3
NTMFS010N10G
TYPICAL CHARACTERISTICS
10,000
1,000
100
10
10
C
ISS
9
8
7
6
5
4
3
2
1
0
Q
Q
GD
GS
C
OSS
C
RSS
f = 1 MHz
= 0 V
T = 25°C
J
I = 31 A
D
V
V
DS
= 50 V
GS
T = 25°C
J
1
0
0
10
20
30
40
50
60
10 20 30 40 50 60 70 80 90 100
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DS
Q , GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
V
V
= 10 V
= 50 V
= 31 A
GS
100
T = 25°C
J
DS
I
D
T = 125°C
J
t
r
t
d(off)
T = 150°C
J
t
d(on)
t
f
T = 175°C
J
T = −55°C
J
10
1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
1
10
R , GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
C
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage Versus
Current
100
1000
100
10
10 ms
T
= 25°C
J(initial)
100 ms
10
T
= 25°C
C
T
= 100°C
J(initial)
1 ms
Single Pulse
≤ 10 V
V
GS
10 ms
100 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1 s
1
0.1
1
10
100
0.000001 0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , TIME in AVALANCHE (s)
AV
Figure 11. Forward Bias Safe Operating Area
Figure 12. Maximum Drain Current Versus
Time in Avalanche
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4
NTMFS010N10G
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.001
0.0001
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
t, PULSE (s)
0.01
0.1
1
Figure 13. Transient Thermal Impedance
ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping (Qty / Packing)
NTMFS010N10GTWG
10N10G
PQFN8
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS010N10G
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
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6
NTMFS010N10G
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