NTMFS034N15MC [ONSEMI]
Power MOSFET, 150V Single N channel 31A, 31m Ohm in Power56 package;
| 型号： | NTMFS034N15MC |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, 150V Single N channel 31A, 31m Ohm in Power56 package |
| 文件： | 总9页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - N-Channel
Shielded Gate PowerTrench[
150 V, 31 mW, 31 A
NTMFS034N15MC
Features
www.onsemi.com
• Small Footprint (5 x 6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low QG and Capacitance to Minimize Driver Losses
• 100% UIL Tested
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
150 V
31 mW @ 10 V
31 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D
Typical Applications
• Synchronous Rectification
• AC−DC and DC−DC Power Supplies
• AC−DC Adapters (USB PD) SR
• Load Switch
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
N−CHANNEL MOSFET
Parameter
Drain−to−Source Voltage
Symbol
Value
150
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
I
31
A
D
Current R
(Note 2)
q
JC
Pin 1
Steady
State
T
= 25°C
C
Power Dissipation
(Note 2)
P
62.5
6.1
W
A
Top
Bottom
D
Power 56
(PQFN8)
R
q
JC
Continuous Drain
Current R
I
D
CASE 483AE
q
JA
Steady
State
(Notes 1, 2)
T = 25°C
A
MARKING DIAGRAM
Power Dissipation
P
2.5
W
D
R
(Notes 1, 2)
q
JA
S
D
D
Pulsed Drain Current
T
= 25°C, t = 100 ms
I
DM
131
A
C
p
S
S
G
3415MC
AYWZZ
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
D
D
Single Pulse Drain−to−Source Avalanche
E
AS
54
mJ
Energy (I = 6 A , L = 3 mH)
L
pk
3415MC = Specific Device Code
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad.
ORDERING INFORMATION
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
†
Device
Package
Power 56 3000 / Tape
(PQFN8) & Reel
Shipping
NTMFS034N15MC
(Pb−Free/Halogen Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2020 − Rev. 0
NTMFS034N15MC/D
NTMFS034N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.0
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Notes 1, 2)
R
°C/W
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
150
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
86
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1.0
DSS
GSS
GS
J
mA
V
= 120 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V
=
20 V
100
nA
DS
GS
Gate Threshold Voltage
V
V
= V , I = 70 mA
2.5
4.5
V
mV/°C
mW
mW
S
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
V
/T
I = 70 mA, ref to 25°C
D
−7.7
25
GS(TH)
J
R
R
V
= 10 V, I = 13 A
31
DS(on)
DS(on)
GS
D
V
= 8 V, I = 6 A
27
36.5
GS
D
g
FS
V
= 10 V, I = 13 A
27
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
905
270
5
ISS
Output Capacitance
C
V
GS
= 0 V, f = 1 MHz, V = 75 V
pF
OSS
RSS
DS
Reverse Transfer Capacitance
Gate−Resistance
C
R
0.6
12
1.2
W
G
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
3.1
4.8
1.8
5.4
32
G(TH)
nC
Q
V
GS
= 10 V, V = 75 V; I = 13 A
GS
GD
GP
DS
D
Q
V
V
Output Charge
Q
V
DD
= 75 V, V = 0 V
nC
OSS
GS
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
12
2.2
14
d(ON)
Rise Time
t
r
V
= 10 V, V = 75 V,
DD
GS
D
ns
I
= 13 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
2.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 13 A
T = 25°C
0.87
41
1.2
V
SD
S
J
t
ns
nC
ns
nC
RR
V
S
= 0 V, V = 75 V
DD
GS
dI /dt = 300 A/ms, I = 13 A
S
Q
126
22
RR
RR
t
RR
V
S
= 0 V, V = 75 V
DD
GS
dI /dt = 1000 A/ms, I = 13 A
S
Q
164
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NTMFS034N15MC
NOTES:
3. Switching characteristics are independent of operating junction temperatures.
2
4. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 50°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
www.onsemi.com
3
NTMFS034N15MC
TYPICAL CHARACTERISTICS
6
50
40
30
20
8.0 V
V
GS
= 6.0 V
10 V
5.5 V
7.0 V
5
6.0 V
4
3
2
V
GS
= 5.5 V
7 V
10
0
1
0
10 V
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
8 V
0
2
4
6
8
10
0
4
0
10
20
30
40
50
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
DS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
150
120
90
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
= 13 A
D
I
V
= 13 A
= 10 V
D
GS
60
T = 125°C
J
T = 25°C
J
30
0
0.8
0.6
−75 −50 −25
0
25
50
75
100 125 150
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs. Gate−to−Source
Junction Temperature
Voltage
50
40
30
20
100
10
1
V
= 10 V
V
= 0 V
DS
GS
T = 25°C
J
0.1
T = 150°C
10
0
0.01
J
T = 150°C
J
T = 25°C
J
T = −55°C
J
T = −55°C
J
0.001
2
3
4
5
6
7
8
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
www.onsemi.com
4
NTMFS034N15MC
TYPICAL CHARACTERISTICS
10
8
10K
V
DD
= 25 V
I
D
= 13 A
V
DD
= 50 V
C
ISS
1K
V
DD
= 75 V
C
OSS
6
100
4
10
1
C
RSS
2
0
f = 1 MHz
= 0 V
V
GS
0
3
6
9
12
0.1
1
10
100 150
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
40
30
20
10K
V
= 10 V
GS
1K
V
= 8 V
GS
100
10
10
0
R
= 2.0°C/W
q
JC
25
50
75
100
125
150
0.00001 0.0001
0.001
0.01
0.1
1
T , CASE TEMPERATURE (°C)
C
t, PULSE WIDTH (s)
Figure 9. Drain Current vs. Case Temperature
Figure 10. Peak Power
10
200
100
T
= 25°C
C
Single Pulse
= 2.0°C/W
R
q
JC
10 ms
T
= 25°C
J(initial)
100 ms
10
T
= 100°C
J(initial)
T
= 125°C
J(initial)
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms/DC
100 200
1
0.1
0.01
0.1
1
10
0.1
1
10
t , TIME IN AVALANCHE (mS)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Unclamped Inductive Switching
Capability
Figure 12. Forward Bias Safe Operating Area
www.onsemi.com
5
NTMFS034N15MC
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
Notes:
= 2.0°C/W
P
DM
0.1
0.02
R
q
JC
Peak T = P
Duty Cycle, D = t /t
x Z
(t) + T
JC C
q
J
DM
t
1
0.01
1
2
t
2
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
www.onsemi.com
6
NTMFS034N15MC
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
www.onsemi.com
7
NTMFS034N15MC
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
ON Semiconductor Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
©2020 ICPDF网 联系我们和版权申明