NTMFS0D9N04XLT1G [ONSEMI]
Power MOSFET, Single, N-Channel, 40V, 0.9mΩ, 278A, SO8-FL 5x6;
| 型号： | NTMFS0D9N04XLT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, N-Channel, 40V, 0.9mΩ, 278A, SO8-FL 5x6 |
| 文件： | 总8页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel, Logic Level,
SO8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
0.9 mW @ 10 V
1.5 mW @ 4.5 V
40 V
278 A
40 V, 0.9 mW, 278 A
D (5)
NTMFS0D9N04XL
Features
G (4)
• Low R
to Minimize Conduction Loss
• Low Q with Soft Recovery to Minimize E Loss and Voltage
DS(on)
RR
RR
S (1,2,3)
N−CHANNEL MOSFET
Spike
• Low Q and Capacitance to Minimize Driving and Switching Loss
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
Typical Applications
S
S
S
G
DFN5 (SO−8FL)
CASE 488AA
• High Switching Frequency DC−DC Conversion
• Synchronous Rectification
0D9N4L
AYWZZ
1
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
0D9N4L = Specific Device Code
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
V
DSS
Gate−to−Source Voltage
DC
V
GS
20
V
Continuous Drain Current
(Note 2)
T
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C,
I
278
196
136
68
A
C
C
C
D
T
C
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
Power Dissipation (Note 2)
T
P
W
A
D
T
C
Pulsed Drain Current
T
I
1193
1193
DM
t = 100 ms
p
Pulsed Source Current
(Body Diode)
I
SM
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
Source Current (Body Diode)
I
207
273
A
S
Single Pulse Avalanche Energy (I = 74 A)
(Note 3)
E
AS
mJ
PK
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. E of 273 mJ is based on started T = 25°C, I = 74 A, V = 32 V,
AS
GS
q
J
AS
DD
V
4. R
= 10 V, 100% avalanche tested.
Thermal Resistance − Junction to Case Top = 20 °C/W.
JCT
© Semiconductor Components Industries, LLC, 2023
1
Publication Order Number:
June, 2023 − Rev. 2
NTMFS0D9N04XL/D
NTMFS0D9N04XL
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1.1
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
38
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
I
D
= 1 mA. Referenced to 25°C
16.6
mV/°C
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
I
V
= 40 V, T = 25°C
10
mA
nA
DSS
DS
J
V
DS
= 40 V, T = 125°C
100
100
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 20 V, V = 0 V
GSS
DS DS
Drain−to−Source On Resistance
R
V
= 10 V, I = 35 A
0.77
0.86
1
0.9
1.1
1.5
2.2
mW
DS(on)
GS
D
V
= 6 V, I = 35 A
D
GS
V
GS
= 4.5 V, I = 28 A
D
Gate Threshold Voltage
V
V
V
= V , I = 180 mA
1.3
V
GS(TH)
GS
DS
D
Gate Threshold Voltage Temperature
Coefficient
DV
/
= V , I = 180 mA
−5.35
mV/°C
GS(TH)
GS
DS
D
DT
J
Forward Transconductance
g
FS
V
DS
= 5 V, I = 35 A
178
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5160
1350
23
pF
ISS
Output Capacitance
Reverse Transfer Capacitance
Output Charge
C
OSS
C
RSS
Q
OSS
V
GS
= 0 V, V = 20 V, f = 1 MHz
DS
V
GS
= 0 V, V = 20 V
52
nC
DS
Total Gate Charge
Q
V
GS
= 4.5 V, V = 20 V; I = 35 A
31
G(TOT)
DD
D
V
GS
= 6 V, V = 20 V; I = 35 A
41
DD
D
V
GS
= 10 V, V = 20 V; I = 35 A
70
DD
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Gate Resistance
Q
8
G(TH)
Q
15
GS
GD
GP
V
GS
= 10 V, V = 20 V; I = 35 A
DD
D
Q
V
5
2.88
0.6
V
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
t
21
6
ns
d(ON)
Resistive Load,
t
r
V
= 0/10 V, V = 20 V,
GS
D
DD
Turn−Off Delay Time
Fall Time
53
4
I
= 35 A, R = 2.5 W
d(OFF)
G
t
f
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2
NTMFS0D9N04XL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
= 0 V, I = 35 A, T = 25°C
0.79
0.65
31
1.2
GS
S
J
V
GS
= 0 V, I = 35 A, T = 125°C
S J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
18
a
V
GS
= 0 V, dI/dt = 300 A/ms,
I
S
= 35 A, V = 20 V
DD
Discharge Time
13
b
Reverse Recovery Charge
Q
67
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTMFS0D9N04XL
TYPICAL CHARACTERISTICS
1200
1000
800
600
400
200
0
1200
T
VDS=5V
J=25°C
VGS=2.8V
GS=3V
V
1000
VGS=3.5V
VGS=4V
800
V
GS=4.5V
V
GS=5V
600
400
200
0
VGS=6V
GS=8V
=10V
V
V
GS
T
J=−55°C
T
J=25°C
T
J=175°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
14
3
2.5
2
T
J=25°C
ID=35A
T
J=25°C
T
J=175°C
VGS=3.5V
12
10
8
VGS=4V
VGS=4.5V
GS=5V
GS=6V
VGS=10V
V
V
1.5
1
6
4
0.5
0
2
0
3
4
5
6
7
8
9
10
0
50
100
150
200
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
Figure 4. On−Resistance vs. Drain Current
Figure 3. On−Resistance vs. Gate Voltage
2
1000000
100000
10000
1000
100
I
D =35A
VGS=10V
1.8
1.6
1.4
1.2
1
10
T
J=25°C
T
J=85°C
T
J=125°C
0.8
1
T
J=150°C
T
J=175°C
0.6
0.1
−75 −50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T
J, Junction Temperature (°C)
VDS, Drain to Source Voltage (V)
Figure 6. Drain Leakage Current vs. Drain Voltage
Figure 5. Normalized ON Resistance vs. Junction
Temperature
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4
NTMFS0D9N04XL
TYPICAL CHARACTERISTICS (CONTINUED)
10000
1000
100
10
ID=35A
8
6
4
2
0
VGS=0V
T
J=25°C
f=1MHz
CISS
COSS
CRSS
=20V
VDD
=32V
VDD
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
VDS , Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
1e−06
1e−07
1e−08
1e−09
1000
100
VGS=10V
VDS=20V
ID=35A
VGS=0V
10
1
0.1
0.01
0.001
0.0001
td(on)
td(off)
tr
T
J=175°C
T
J=25°C
T
tf
J=−55°C
0
0.2
0.4
0.6
0.8
1
1.2
1
10
VSD, Body Diode Forward Voltage (V)
R
G, Gate Resistance (W)
Figure 10. Diode Forward Characteristics
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
TC=25°C
1000
100
10
Single Pulse
R
qJC =1.1°C/W
T
J =175°C
10
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
1
pulseDuration=10m
25C Rating
0.01
100C
125C
10
pulseDuration=100ms/DC
1
0.001
0.1
0.1
1
10
0.1
1
100
1000
VDS , Drain to Source Voltage (V)
tAV ,TIME IN AVALANCHE (msec)
Figure 12. Avalanche Current vs. Pulse Time (UIS)
Figure 11. Safe Operating Area (SOA)
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5
NTMFS0D9N04XL
TYPICAL CHARACTERISTICS (CONTINUED)
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
−75 −50 −25
0
25
50
75
100 125 150 175
TJ, Junction Temperature (°C)
Figure 13. Gate Threshold Voltage vs. Junction Temperature
10
1
D=0 is Single Pulse
0.1
Single
0.5
0.2
0.1
0.05
0.02
0.01
0.01
Notes:
ZθJC(t)=1.1°C/W Max
TJM=PDMxZθJC((tt))++TTC
Duty Cycle,D=t1/t2
P
DM
t
1
t
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, Rectangular Pulse Duration (sec)
Figure 14. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS0D9N04XLT1G
0D9N4L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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