NTMFS4835N [ONSEMI]
Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL; 功率MOSFET的30 V ， 104 A单N沟道， SO- 8FL
| 型号： | NTMFS4835N |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL |
| 文件： | 总7页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4835N
Power MOSFET
30 V, 104 A, Single N−Channel, SO−8FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices*
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V
R
DS(ON)
MAX
I MAX
D
(BR)DSS
Applications
3.5 mW @ 10 V
5.0 mW @ 4.5 V
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
30 V
104 A
D (5,6)
• Low Side Switching
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
G (4)
Drain−to−Source Voltage
Gate−to−Source Voltage
V
30
20
20
V
V
A
DSS
V
GS
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
Current R
T = 25°C
I
D
A
q
JA
T = 85°C
A
14
(Note 1)
MARKING
DIAGRAM
Power Dissipation
T = 25°C
P
2.27
W
A
A
D
D
D
R
(Note 1)
q
JA
Continuous Drain
Current R
T = 25°C
A
I
D
12
9.0
D
q
JA
S
S
S
G
D
D
Steady
State
T = 85°C
A
(Note 2)
4835N
AYWWG
G
1
Power Dissipation
T = 25°C
A
P
I
0.89
W
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
R
q
JA
(Note 2)
Continuous Drain
Current R
T
T
T
= 25°C
= 85°C
= 25°C
104
75
D
C
C
C
D
q
JC
(Note 1)
A
Y
WW
G
= Assembly Location
= Year
Power Dissipation
P
62.5
W
A
R
q
JC
(Note 1)
= Work Week
= Pb−Free Package
Pulsed Drain
Current
T = 25°C,
t = 10 ms
I
208
A
DM
(Note: Microdot may be in either location)
p
Operating Junction and Storage
Temperature
T ,
STG
−55 to
+150
°C
J
T
ORDERING INFORMATION
Source Current (Body Diode)
Drain to Source DV/DT
I
52
6
A
S
†
d /d
V
V/ns
mJ
t
Device
Package
Shipping
Single Pulse Drain−to−Source Avalanche
E
AS
392
NTMFS4835NT1G
SO−8FL
1500 /
Energy T = 25°C, V = 50 V, V = 10 V,
J
DD
GS
(Pb−Free)
Tape & Reel
I = 28 A , L = 1.0 mH, R = 25 W
L
pk
G
NTMFS4835NT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
May, 2010 − Rev. 6
NTMFS4835N/D
NTMFS4835N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.0
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note )
R
55.1
140.1
°C/W
q
JA
R
q
JA
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
22.4
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25 °C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.5
1.9
5.3
2.9
2.5
4.3
3.9
21
2.5
3.5
5.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
DS(on)
V
= 10 V to
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
GS
11.5 V
mW
V
GS
= 4.5 V
Forward Transconductance
g
FS
V
= 15 V, I = 15 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3100
670
360
22
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 12 V
pF
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
39
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
4.7
8.3
8.8
52
G(TH)
V
GS
= 4.5 V, V = 15 V; I = 30 A
nC
nC
DS
D
Q
GS
Q
GD
Q
V
GS
= 11.5 V, V = 15 V;
DS
G(TOT)
I
= 30 A
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
16
31
22
13
10
23
30
10
d(ON)
t
r
V
GS
= 4.5 V, V = 15 V, I = 15 A,
DS D
ns
ns
R
= 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
Turn−On Delay Time
Rise Time
t
d(ON)
t
r
V
= 11.5 V, V = 15 V,
DS
GS
D
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4835N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
1.0
50
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.77
0.70
27
J
V
S
= 0 V,
= 30 A
GS
V
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
15
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
12
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
18
nC
RR
L
0.65
0.005
1.84
1.3
nH
nH
nH
W
S
D
G
L
L
T = 25°C
A
Gate Inductance
Gate Resistance
R
5.0
G
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4835N
TYPICAL PERFORMANCE CURVES
170
170
150
130
110
90
V
DS
≥ 10 V
4.0 V
3.5 V
150
130
110
90
V
GS
= 5.0 to 10 V
T = 25°C
J
3.2 V
3.0 V
70
70
T = 25°C
J
50
50
2.8 V
2.6 V
30
30
T = 125°C
T = −55°C
J
J
10
0
10
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.008
0.007
0.006
0.005
0.004
0.003
0.002
I
= 30 A
D
T = 25°C
J
T = 25°C
J
V
= 4.5 V
GS
V
GS
= 11.5 V
0.005
0
0.001
0
2
4
6
8
10
12
10 15
20 25 30 35
40 45
50 55 60
V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
100,000
10,000
1,000
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
GS
1.5
1.0
T = 150°C
J
T = 125°C
J
100
10
0.5
0
−50 −25
0
25
50
75
100 125 150
4
8
12
16
20
24
28 30
T , JUNCTION TEMPERATURE (°C)
J
V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4835N
TYPICAL PERFORMANCE CURVES
5000
4500
4000
3500
3000
2500
2000
1500
1000
12
20
18
16
14
12
10
8
Q
T
T = 25°C
J
C
C
iss
10
8
V
GS
V
DS
C
iss
6
rss
Q
Q
gd
gs
4
6
4
2
0
I = 30 A
D
T = 25°C
C
oss
2
0
500
0
J
15 10
5
V
0
5
DS
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45 50 55
V
GS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Figure 7. Capacitance Variation
Voltage vs. Total Charge
30
25
20
1000
V
= 15 V
= 15 A
= 11.5 V
DS
V
= 0 V
GS
I
D
V
GS
T = 25°C
J
t
t
d(off)
100
t
f
r
15
10
t
d(on)
10
1
5
0
1
10
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
R , GATE RESISTANCE (W)
G
V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
400
360
320
280
240
200
160
120
80
I
D
= 28 A
10 ms
100 ms
1 ms
V
= 20 V
GS
10 ms
dc
SINGLE PULSE
= 25°C
T
C
1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
40
0
0.1
0.1
1
10
100
25
50
75
100
125
150
V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4835N
TYPICAL PERFORMANCE CURVES
1000
100
25°C
10
1
100°C
125°C
1
10
100
1000
10000
PULSE WIDTH (ms)
Figure 13. Avalanche Characteristics
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6
NTMFS4835N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA−01
ISSUE D
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
6
5
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
−−−
6.15 BSC
5.80
−−−
1.27 BSC
0.61
−−−
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.50
3.50
5.10
4.22
c
A1
5.50
3.45
6.10
4.30
1
2
3
4
0.51
0.51
0.51
0.05
3.00
0
0.71
−−−
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
3X
4X
1.270
0.750
4X
1.000
b
8X
STYLE 1:
0.10
0.05
C
c
A
B
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
e/2
L
0.965
1
4
5. DRAIN
6. DRAIN
K
0.29X05
0.475
1.330
2X
0.495
E2
4.530
M
3.200
L1
6
5
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMFS4835N/D
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