NTMFS4922NET3G [ONSEMI]
功率 MOSFET，30V，147A，2.0mΩ，单 N 沟道，热增强，SO-8FL;
| 型号： | NTMFS4922NET3G |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，30V，147A，2.0mΩ，单 N 沟道，热增强，SO-8FL |
| 文件： | 总8页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4922NE
Power MOSFET
30 V, 147 A, Single N−Channel, SO−8 FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
http://onsemi.com
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2.0 mW @ 10 V
3.0 mW @ 4.5 V
30 V
147 A
Applications
• CPU Power Delivery, DC−DC Converters
D (5,6)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
V
DSS
30
20
G (4)
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
T = 25°C
I
29.1
A
A
D
q
JA
S (1,2,3)
N−CHANNEL MOSFET
T = 100°C
A
18.4
2.72
(Note 1)
Power Dissipation
T = 25°C
A
P
W
A
D
D
D
D
R
(Note 1)
q
JA
Continuous Drain
T = 25°C
A
I
D
47.5
30.0
7.23
MARKING
DIAGRAM
Current R
(Note 1)
≤ 10 s
q
JA
T = 100°C
A
D
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
W
A
R
q
JA
1
S
S
S
G
D
D
Steady
State
4922NE
AYWZZ
Continuous Drain
Current R
T = 25°C
A
I
D
17.1
10.8
0.93
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
q
JA
T = 100°C
A
(Note 2)
D
Power Dissipation
T = 25°C
A
P
W
A
R
(Note 2)
q
JA
A
Y
= Assembly Location
= Year
Continuous Drain
Current R
T
= 25°C
=100°C
= 25°C
I
D
147
93
C
q
JC
T
C
(Note 1)
W
ZZ
= Work Week
= Lot Traceability
Power Dissipation
T
C
P
69.44
W
R
(Note 1)
q
JC
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
442
100
A
A
A
p
Current Limited by Package
T = 25°C
A
I
Dmax
ORDERING INFORMATION
Operating Junction and Storage Temperature
T ,
STG
−55 to
°C
J
†
T
+150
Device
NTMFS4922NET1G
Package
Shipping
1500 /
Tape & Reel
Source Current (Body Diode)
Drain to Source DV/DT
I
S
68
6
A
SO−8 FL
(Pb−Free)
dV/d
V/ns
mJ
t
Single Pulse Drain−to−Source Avalanche
E
AS
162.5
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Energy T = 25°C, V = 24 V, V = 10 V,
J
DD
GS
I = 37 A , L = 0.3 mH, R = 25 W
L
pk
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2012 − Rev. 1
NTMFS4922NE/D
NTMFS4922NE
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.8
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
Junction−to−To p
R
46.0
134.2
17.3
8.0
q
JA
R
°C/W
q
JA
R
q
JA
R
q
JT
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
15.2
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
10
DSS
J
V
= 0 V,
= 24 V
GS
DS
mA
V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.2
1.6
4.6
2.0
2.0
3.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
V
= 10 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
1.45
1.45
2.2
DS(on)
GS
GS
mW
V
= 4.5 V
2.2
Forward Transconductance
g
FS
V
DS
= 1.5 V, I = 15 A
80
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5505
2355
90
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 15 V
pF
DS
Q
34
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
3.8
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Q
13.9
8.1
GS
Q
GD
Q
V
= 10 V, V = 15 V; I = 30 A
76.5
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
20.0
36.2
39.3
9.4
d(ON)
t
r
V
GS
= 4.5 V, V = 15 V, I = 15 A,
DS D
ns
R
= 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMFS4922NE
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
13.2
33.3
49.7
7.8
d(ON)
Rise Time
t
r
V
GS
= 10 V, V = 15 V, I = 15 A,
DS D
ns
R
= 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.79
0.65
59.1
28.3
30.8
70
1.0
SD
J
V
S
= 0 V,
GS
V
I
= 30 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
nC
RR
L
L
1.00
0.005
1.84
nH
nH
nH
W
S
D
G
T = 25°C
A
Gate Inductance
L
Gate Resistance
R
0.55
G
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTMFS4922NE
TYPICAL CHARACTERISTICS
180
160
140
120
100
80
200
T = 25°C
J
V
DS
= 10 V
3.6 V to 10 V
180
160
140
120
100
80
V
GS
= 3.4 V
3.2 V
3.0 V
2.8 V
T = 125°C
J
60
60
T = 25°C
J
40
2.6 V
2.4 V
40
20
20
T = −55°C
J
2.2 V
4
0
0
0
1
2
3
5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0028
0.0026
0.0024
0.0022
0.0020
0.0018
0.0026
0.0024
0.0022
0.0020
0.0018
0.0016
0.0014
0.0012
I
= 30 A
T = 25°C
D
J
T = 25°C
J
V
= 4.5 V
GS
V
GS
= 10 V
0.0016
0.0014
3
4
5
6
7
8
9
10
20
40
60
80
100 120 140 160 180
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
1000
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
V = 0 V
GS
I
V
= 30 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
0.9
0.8
0.7
0.6
T = 85°C
J
100
−50
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
http://onsemi.com
4
NTMFS4922NE
TYPICAL CHARACTERISTICS
11
7000
6000
5000
4000
3000
2000
1000
0
T = 25°C
10
9
8
7
6
5
4
3
2
1
0
Q
J
T
C
V
GS
= 0 V
iss
T = 25°C
J
Q
GD
C
C
oss
Q
GS
V
V
= 15 V
= 10 V
DD
GS
rss
I
D
= 30 A
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
30
25
20
15
10
5
1000
100
10
V
GS
= 0 V
V
I
= 15 V
= 15 A
= 10 V
DD
D
V
GS
t
r
t
d(off)
T = 125°C
J
t
d(on)
T = 25°C
J
t
f
0
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
200
I
D
= 37 A
0 V < V < 10 V
SINGLE PULSE
GS
180
160
140
120
100
80
10 ms
T
C
= 25°C
100 ms
1 ms
10 ms
1
60
R
LIMIT
DS(on)
0.1
40
dc
THERMAL LIMIT
PACKAGE LIMIT
20
0
25
0.01
0.01
0.1
1
10
100
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
NTMFS4922NE
TYPICAL CHARACTERISTICS
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
0.01
SINGLE PULSE
0.0001
0.000001
0.00001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 13. Thermal Response
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
(A)
I
D
Figure 14. GFS vs. ID
http://onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明