NTMFS4982NFT3G [ONSEMI]
Single NâChannel Power MOSFET;
| 型号： | NTMFS4982NFT3G |
| 厂家： | 
ONSEMI |
| 描述： | Single NâChannel Power MOSFET |
| 文件： | 总7页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4982NF
Power MOSFET
30 V, 207 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
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• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Applications
• Server, Netcom, POL
1.3 mW @ 10 V
1.9 mW @ 4.5 V
30 V
207 A
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• High Performance Applications
N−CHANNEL MOSFET
(5, 6)
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value Unit
V
DSS
30
20
36
V
V
A
G
Gate−to−Source Voltage
V
GS
(4)
Continuous Drain
Current R
I
D
T = 25°C
A
q
JA
T = 85°C
A
26
(Note 1)
Power Dissipation
(Note 1)
S
(1, 2, 3)
T = 25°C
A
P
2.7
W
A
D
D
D
D
R
q
JA
MARKING
DIAGRAM
Continuous Drain
I
D
T = 25°C
A
60
43
Current R
10 sec
v
q
JA
T = 85°C
A
D
S
S
S
G
D
D
Power Dissipation
T = 25°C
A
P
I
7.4
W
A
1
4982NF
AYWZZ
R
t v 10 sec
q
JA,
Steady
State
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
Continuous Drain
Current R
T = 25°C
A
26.5
19
D
q
JA
T = 85°C
A
D
(Note 2)
Power Dissipation
(Note 2)
T = 25°C
A
P
I
1.5
W
A
A
Y
= Assembly Location
= Year
= Work Week
= Lot Traceability
R
q
JA
Continuous Drain
Current R
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
207
149
89.3
D
W
ZZ
q
JC
(Note 1)
Power Dissipation
(Note 1)
P
W
R
q
JC
Pulsed Drain Current t =10ms
T = 25°C
I
350
100
A
A
ORDERING INFORMATION
p
A
DM
I
Dmaxpkg
Current limited by package
T = 25°C
A
†
Device
Package
Shipping
Operating Junction and Storage Temperature
T ,
−55 to
+150
°C
J
NTMFS4982NFT1G
SO−8FL
1500 /
T
STG
(Pb−Free)
Tape & Reel
Source Current (Body Diode)
Drain to Source dV/dt
I
S
54
6
A
NTMFS4982NFT3G
SO−8FL
5000 /
dV/dt
EAS
V/ns
mJ
(Pb−Free)
Tape & Reel
Single Pulse Drain−to−Source Avalanche
125
Energy (V = 50 V, V = 10 V, I = 50 A ,
DD
GS
L
pk
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
L = 0.1 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
February, 2014 − Rev. 3
NTMFS4982NF/D
NTMFS4982NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.4
Unit
Junction−to−Case (Drain)
R
q
JC
q
JA
q
JA
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient − t v 10 sec
R
R
46.6
84.1
16.8
°C/W
R
q
JA
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1.0 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 10 mA, referenced to 25°C
15
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
500
100
DSS
GS
DS
J
mA
V
= 24 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = 1.0 mA
1.0
1.7
5.0
0.95
1.4
60
2.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
I = 10 mA, referenced to 25°C
D
mV/°C
GS(TH)
R
V
= 10 V
= 4.5 V
I
= 25 A
= 25 A
1.3
1.9
DS(on)
GS
GS
D
D
mW
V
I
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
C
6000
2400
160
40
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
8.8
15
G(TH)
V
GS
= 4.5 V, V = 15 V; I = 25 A
nC
nC
DS
D
Q
GS
Q
12
GD
Q
V
GS
= 10 V, V = 15 V,
84
G(TOT)
DS
I
= 25 A
D
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
t
17.2
31.6
34.3
12
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
ns
I
= 25 A, R = 3 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
Turn−On Delay Time
Rise Time
t
12.7
20.4
38.6
11.3
d(ON)
t
r
V
= 10 V, V = 15 V,
DS
GS
I
= 25 A, R = 3 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4982NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.4
0.32
58
0.7
SD
J
V
= 0 V,
GS
S
V
I
= 2 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
29
ns
nC
nH
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 25 A
Discharge Time
t
29
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
71
RR
L
L
0.65
0.20
1.5
S
D
G
T = 25°C
A
Gate Inductance
L
Gate Resistance
R
0.8
W
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4982NF
TYPICAL CHARACTERISTICS
200
3.4 V
150
135
120
105
90
180
160
140
120
100
80
V
DS
= 5 V
3.6 V to 10 V
3.2 V
3.0 V
2.8 V
75
T = 125°C
J
60
60
45
T = −55°C
J
40
T = 25°C
30
J
2.6 V
2.4 V
20
0
15
0
0
1
2
3
4
5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.012
0.010
0.008
2.0E−03
1.75E−03
1.5E−03
1.25E−03
1.0E−03
T = 25°C
I
= 25 A
J
D
T = 25°C
J
V
= 4.5 V
= 10 V
GS
0.006
0.004
0.002
0
V
GS
7.5E−04
5.0E−04
2.0 3.0
V
4.0
5.0
6.0
7.0
8.0
9.0 10
10 20 30 40 50 60 70 80 90 100 110 120
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
GS
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1E−01
1E−02
1E−03
V
GS
= 0 V
I
V
= 20 A
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
D
= 10 V
GS
T = 125°C
J
1E−04
1E−05
T = 25°C
J
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4982NF
TYPICAL CHARACTERISTICS
11
8000
7000
6000
5000
4000
3000
2000
Q
T
V
= 0 V
GS
10
9
T = 25°C
J
C
C
iss
8
7
6
5
Q
Q
gd
gs
oss
4
3
2
1
0
T = 25°C
J
V
V
I
= 15 V
= 10 V
= 25 A
DD
GS
1000
0
C
D
rss
0
5
10
15
20
25
100
100
0
10
20
30
40
50
60
70
80
90
V
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
DS
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9
10000
1000
V
= 15 V
= 10 A
= 10 V
DD
V
GS
= 0 V
I
D
8
V
GS
t
7
d(off)
6
t
f
100
5
t
r
4
T = 25°C
J
t
d(on)
3
10
1
2
1
0
1
10
R , GATE RESISTANCE (W)
0
0.1
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.3
0.4
0.5
0.6
0.7
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
130
120
110
100
90
80
70
60
50
40
30
20
10
0
I
D
= 50 A
10 ms
100 ms
1 ms
10 ms
V
= 20 V
Single Pulse
= 25°C
GS
1
T
R
C
0.1
Limit
dc
DS(on)
Thermal Limit
Package Limit
0.01
0.1
1
10
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4982NF
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
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6
NTMFS4982NF
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
D1
D2
E
4.70
3.80
5.10
4.20
c
A1
6.15 BSC
E1
E2
e
G
K
L
L1
M
5.70
3.45
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
3.40
−−−
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
DETAIL A
q
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
4X
5. DRAIN
1.270
0.750
b
8X
4X
0.10
0.05
C
c
A
B
1.000
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
2X
0.495
E2
PIN 5
(EXPOSED PAD)
M
4.530
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTMFS4982NF/D
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