NTMFS4D2N10MDT1G [ONSEMI]
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 113A, 4.2mΩ;
| 型号： | NTMFS4D2N10MDT1G |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Shielded Gate PowerTrench® MOSFET 100V, 113A, 4.2mΩ 栅 |
| 文件： | 总8页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single,
N-Channel
100 V, 4.3 mW, 113 A
NTMFS4D2N10MD
Features
• Shielded Gate MOSFET Technology
• Low R
to Minimize Conduction Losses
www.onsemi.com
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• Low Q , Soft Recovery Body Diode
RR
• Low Q
to Improve Light Load Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
OSS
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
4.3 mW @ 10 V
7.1 mW @ 6 V
and are RoHS Compliant
100 V
113 A
Typical Applications
• Primary Switch in Isolated DC−DC Converter
• Synchronous Rectification (SR) in DC−DC and AC−DC
• AC−DC Adapters (USB PD) SR
D (5,6)
• Load Switch, Hotswap, and ORing Switch
• BLDC Motor and Solar Inverter
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
G (4)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
S (1,2,3)
N−CHANNEL MOSFET
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
T
= 25°C
I
113
A
C
D
Current R
(Note 1)
q
JC
Steady
State
MARKING
DIAGRAM
Power Dissipation
(Note 1)
P
132
W
A
D
R
q
JC
D
1
Continuous Drain
Current R
T = 25°C
A
I
D
16.4
S
S
S
G
D
D
q
JA
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
4D2N10
AYWZZ
Steady
State
(Notes 1, 2)
Power Dissipation
P
2.8
W
D
R
(Notes 1, 2)
q
D
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
763
A
A
p
DM
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+150
°C
stg
Source Current (Body Diode)
I
S
110
486
A
Single Pulse Drain−to−Source Avalanche
E
mJ
AS
Energy (I = 18 A) (Note 6)
AV
ORDERING INFORMATION
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
300
°C
L
Device
NTMFS4D2N10MDT1G
Package
Shipping†
DFN5
1500 /
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
0.95
45
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2020 − Rev. 2
NTMFS4D2N10MD/D
NTMFS4D2N10MD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
60
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
mA
DSS
GS
DS
J
V
= 80 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 239 mA
2
4
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 239 mA, ref to 25°C
D
−7.9
3.8
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V, I = 46 A
4.3
7.1
DS(on)
D
V
= 6 V, I = 23 A
5.7
GS
DS
D
Forward Transconductance
Gate−Resistance
g
FS
V
= 8 V, I = 46 A
105
0.97
S
D
R
T = 25°C
A
1.6
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 50 V
3100
800
23
pF
nC
ISS
GS
DS
Output Capacitance
C
OSS
RSS
OSS
Reverse Transfer Capacitance
Output Charge
C
Q
V
GS
= 0 V, V = 50 V
63.4
25
DS
Total Gate Charge
Q
V
= 6 V, V = 50 V, I = 46 A
DS D
G(TOT)
G(TOT)
GS
Total Gate Charge
Q
V
GS
= 10 V, V = 50 V, I = 46 A
40
60
10
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
10
G(TH)
Q
15
GS
GD
GP
Q
V
6.7
5.0
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= 10 V, V = 50 V,
21
9.5
34
ns
d(ON)
GS
D
DS
I
= 46 A, R = 6 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
6.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.85
0.73
23.1
196
V
SD
RR
GS
J
I
= 46 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
t
V
= 0 V, dI /dt = 1000 A/ms,
ns
GS
S
I
S
= 23 A
Q
nC
ns
RR
t
V
= 0 V, dI /dt = 100 A/ms,
52.6
66.1
RR
GS
S
I
S
= 46 A
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
2
4. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
www.onsemi.com
2
NTMFS4D2N10MD
a) 45°C/W when mounted on
b) 111°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
5. Pulse Test: pulse width < 300 ms, duty cycle < 2%.
6. E of 486 mJ is based on started T = 25°C, I = 18 A, V = 90 V, V = 15 V. 100% test at I = 51.5 A.
AS
J
AS
DD
GS
AS
7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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3
NTMFS4D2N10MD
TYPICAL CHARACTERISTICS
V
GS
= 10 V to 3.4 V
100
80
V
DS
= 8 V
100
80
3.2 V
3.0 V
60
60
2.8 V
2.6 V
T = 25°C
40
40
J
20
0
20
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
7
6
5
4
6
5
4
T = 25°C
J
T = 25°C
D
J
I
= 46 A
V
= 6 V
GS
V
GS
= 10 V
3
2
3
2
5
6
7
8
9
10
11
12
5
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
100K
10K
1K
V
= 10 V
= 46 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
10
1
T = 25°C
J
1.0
0.5
0.1
−50
−25
0
25
50
75
100
125
150
10 20
30
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4D2N10MD
TYPICAL CHARACTERISTICS
10
10K
1K
C
ISS
9
8
7
6
5
4
3
C
OSS
RSS
Q
Q
GD
GS
100
C
10
1
V
DS
= 50 V
V
= 0 V
2
1
0
GS
I
D
= 46 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
10 20 30 40
50 60 70
80 90 100
0
5
10
15
20
25
30
35
40
45
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
50
10
500
100
V
GS
= 0 V
t
t
d(off)
t
f
t
r
d(on)
10
1
V
V
= 10 V
= 50 V
= 46 A
GS
DS
I
D
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
50
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
T
= 100°C
J(initial)
T
= 125°C
J(initial)
10
1 ms
R
Limit
DS(on)
1
10 ms
100 ms
1 s
T = 25°C
J
A
0.1 T = Max Rated
R
= 111°C/W
q
JA
10 s
Single Pulse
0.01 0.1
, DRAIN−TO−SOURCE VOLTAGE (V)
DC
1
0.01
0.001 0.01
0.1
1
10
100
1000
1
10
100 300
V
DS
TIME IN AVALANCHE (ms)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NTMFS4D2N10MD
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
NTMFS4D2N10MD
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
12
q
−−−
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
RECOMMENDED
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
2X
5. DRAIN
0.495
4.560
8X b
A B
2X
0.10
0.05
C
c
e/2
e
1.530
L
2X
0.475
1
4
3.200
1.330
K
4.530
E2
PIN 5
(EXPOSED PAD)
M
2X
0.905
L1
1
D2
BOTTOM VIEW
0.965
G
4X
1.000
4X
1.270
PITCH
DIMENSIONS: MILLIMETERS
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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