NTMFS4H02NT1G [ONSEMI]
Power MOSFET Single NâChannel;型号: | NTMFS4H02NT1G |
厂家: | ONSEMI |
描述: | Power MOSFET Single NâChannel |
文件: | 总8页 (文件大小:94K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTMFS4H02N
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
MAX R
TYP Q
GTOT
GS
DS(on)
Applications
4.5 V
10 V
2.2 mW
18 nC
38.5 nC
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
1.4 mW
• Servers & Point of Load
PIN CONNECTIONS
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
SO8−FL (5 x 6 mm)
Parameter
Drain-to-Source Voltage
Symbol
Value
25
Units
V
DSS
V
V
A
Gate-to-Source Voltage
V
GS
20
Continuous Drain Current R
(T = 25°C, Note 1)
A
I
D
37
q
JA
JC
(Top View)
(Bottom View)
Power Dissipation R
P
D
3.13
193
83
W
A
q
JA
(T = 25°C, Note 1)
A
Continuous Drain Current R
(T = 25°C, Note 1)
C
I
D
N−CHANNEL MOSFET
q
D (5−8)
Power Dissipation R
P
D
W
q
JC
(T = 25°C, Note 1)
C
Pulsed Drain Current (t = 10 ms)
I
412
331
A
p
DM
Single Pulse Drain-to-Source Avalanche
E
mJ
AS
G (4)
Energy (Note 1) (I = 47 A , L = 0.3 mH)
L
pk
Drain to Source dV/dt
dV/dt
7
V/ns
°C
S (1,2,3)
Maximum Junction Temperature
Storage Temperature Range
T
150
J(max)
T
STG
−55 to
150
°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
T
SLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
2
1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25°C,
J
V
GS
= 10 V, I = 31 A, E = 144 mJ.
L AS
THERMALCHARACTERISTICS
Parameter
Symbol
Max
Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
°C/W
R
40.0
1.5
q
JA
JC
R
q
4. Thermal Resistance R
and R
as defined in JESD51−3.
JC
q
q
JA
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2014 − Rev. 3
NTMFS4H02N/D
NTMFS4H02N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
25
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
18.5
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 20 V
T = 25°C
1
DSS
GS
DS
J
mA
T = 125°C
J
20
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
V
V
GS
= V , I = 250 mA
1.2
2.1
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
3.7
1.1
1.7
84
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 30 A
= 30 A
1.4
2.2
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
g
FS
V
= 12 V, I = 15 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
2651
1814
103
18
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 12 V
pF
nC
DS
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
2.7
G(TH)
V
= 4.5 V, V = 12 V; I = 30 A
DS D
GS
Q
7.2
GS
Q
4.2
GD
Q
V
= 10 V, V = 12 V; I = 30 A
38.5
1.0
nC
G(TOT)
GS
DS
D
Gate Resistance
R
T = 25°C
A
2
W
G
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
13.1
20
d(ON)
t
r
V
GS
= 4.5 V, V = 12 V, I = 15 A,
DD D
ns
R
= 3.0 W
G
Turn−Off Delay Time
Fall Time
t
22.2
9.1
d(OFF)
t
f
SWITCHING CHARACTERISTICS, V = 10 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
9.5
18.5
30.3
5
d(ON)
t
r
V
I
= 10 V, V = 12 V,
DD
GS
ns
V
= 15 A, R = 3.0 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
0.75
0.56
46.3
23.9
22.4
51
1.1
V
GS
= 0 V,
I
S
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
b
nC
Reverse Recovery Charge
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4H02N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
PACKAGE PARASITIC VALUES
Source Inductance
Symbol
Test Condition
Min
Typ
Max
Unit
L
L
0.57
0.13
1.37
nH
nH
nH
S
D
G
Drain Inductance
T = 25°C
A
Gate Inductance
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4H02N
TYPICAL CHARACTERISTICS
V
GS
= 10 V to 3.7 V
140
120
100
80
140
V
DS
= 5 V
V
V
= 3.5 V
= 3.3 V
GS
T = 25°C
J
120
100
80
GS
V
GS
= 3.1 V
= 2.9 V
V
GS
T = 125°C
J
60
60
40
40
T = 25°C
J
V
V
= 2.7 V
= 2.5 V
GS
20
0
20
0
GS
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0030
0.0025
0.0020
0.0020
0.0019
0.0018
0.0017
0.0016
0.0015
0.0014
0.0013
0.0012
0.0011
0.0010
T = 25°C
V
= 30 V
GS
V
= 4.5 V
GS
0.0015
0.0010
V
= 10 V
GS
3
4
5
6
7
8
9
10
20 30 40 50 60
70 80 90 100 110 120
V
GS
(V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1E−04
1E−05
1E−06
1E−07
V
GS
= 0 V
T = 150°C
J
I
V
= 30 A
D
= 10 V
GS
T = 125°C
J
T = 85°C
J
T = 25°C
J
1E−08
1E−09
0.8
0.7
−50 −25
0
25
50
75
100
125
150
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTMFS4H02N
TYPICAL CHARACTERISTICS
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
10
Q
T
T = 25°C
GS
J
V
= 0 V
8
6
4
C
C
iss
oss
Q
Q
gd
gs
T = 25°C
GS
J
V
= 10 V
2
0
V
DD
= 12.0 V
I
D
= 30 A
400
0
C
rss
0
5
10
15
20
25
0
4
8
12 16
20 24 28 32 36 40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
30
25
V
= 12 V
= 15 A
= 10 V
DD
V
GS
= 0 V
I
D
t
d(off)
V
GS
t
f
20
T = 125°C
J
T = 25°C
J
t
r
15
10
t
d(on)
10
1
5
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
150
140
130
120
110
100
90
100 ms
I
D
= 31 A
1 ms
10 ms
80
70
0 V < V < 10 V
GS
1
60
50
40
30
R
Limit
dc
0.1
DS(on)
Thermal Limit
Package Limit
20
10
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4H02N
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
2
PCB Cu Area 650 mm
PCB Cu thk 1 oz
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
220
200
180
160
140
120
100
80
1E+03
1E+02
1E+01
1E+00
60
40
20
0
0
20
40
60
80
(A)
100
120
140
1E−07
1E−06
1E−05
1E−04
1E−03
I
D
PULSE WIDTH (sec)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
NTMFS4H02N
ORDERING INFORMATION
Device
†
Package
Shipping
NTMFS4H02NT1G
SO8−FL
(Pb-Free)
1500 / Tape & Reel
5000 / Tape & Reel
NTMFS4H02NT3G
SO8−FL
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING
DIAGRAM
D
1
S
S
S
G
D
D
4H02N
AYWZZ
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
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7
NTMFS4H02N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
5. DRAIN
b
8X
3X
4X
1.270
0.750
0.10
0.05
C
c
A
B
4X
1.000
e/2
L
1
4
K
0.965
0.29X05
0.475
1.330
E2
PIN 5
(EXPOSED PAD)
M
2X
0.495
L1
4.530
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTMFS4H02N/D
相关型号:
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