NTMFS6D1N08HT1G [ONSEMI]
功率 MOSFET，80V，N 沟道，89A，5.5mΩ，SO8-FL;
| 型号： | NTMFS6D1N08HT1G |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，80V，N 沟道，89A，5.5mΩ，SO8-FL |
| 文件： | 总8页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS6D1N08H
MOSFET – Power, Single,
N-Channel
80 V, 5.5 mW, 89 A
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
5.5 mW @ 10 V
8.0 mW @ 6 V
80 V
89 A
Typical Applications
• Synchronous Rectification
• AC−DC and DC−DC Power Supplies
• AC−DC Adapters (USB PD) SR
• Load Switch
D (5,6)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G (4)
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
S (1,2,3)
N−CHANNEL MOSFET
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
T
= 25°C
I
89
A
C
D
Current R
(Note 1)
q
JC
Steady
State
MARKING
DIAGRAM
Power Dissipation
(Note 1)
P
104
17
W
A
D
R
q
JC
D
Continuous Drain
Current R
T = 25°C
A
I
D
1
S
S
S
G
D
D
q
JA
Steady
State
(Notes 1, 2)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
6D1N08
AYWZZ
Power Dissipation
P
3.8
W
D
R
(Notes 1, 2)
q
JA
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
468
A
A
p
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
87
A
Single Pulse Drain−to−Source Avalanche
E
AS
465
mJ
Energy (I = 5.9 A)
AV
ORDERING INFORMATION
Lead Temperature Soldering Reflow for Solder-
T
300
°C
L
ing Purposes (1/8″ from case for 10 s)
Device
NTMFS6D1N08HT1G
Package
Shipping†
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DFN5
1500 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
1.44
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2019 − Rev. 3
NTMFS6D1N08H/D
NTMFS6D1N08H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
43.8
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
DSS
GS
DS
J
V
= 80 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 120 mA
2.0
4.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 250 mA, ref to 25°C
D
−7.08
4.5
mV/°C
mW
GS(TH)
J
R
V
GS
= 10 V, I = 20 A
5.5
8.0
DS(on)
D
V
= 6 V, I = 10 A
6.4
GS
DS
D
Forward Transconductance
Gate−Resistance
g
FS
V
= 15 V, I = 20 A
80
S
D
R
T = 25°C
A
1.0
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 40 V
2085
300
10
10
32
10
6
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= 6 V, V = 40 V, I = 30 A
nC
nC
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
Q
V
GS
= 10 V, V = 40 V, I = 30 A
DS D
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
GS
GD
GP
V
5
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= 10 V, V = 64 V,
18
50
48
39
ns
d(ON)
GS
D
DS
I
= 30 A, R = 2.5 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.8
0.7
49
60
30
19
1.2
V
SD
GS
J
I
= 20 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
V
V
= 0 V, dI /dt = 100 A/ms,
ns
nC
ns
ns
RR
GS
GS
S
I
S
= 20 A
Q
RR
t
= 0 V, dI /dt = 100 A/ms,
S
a
I
S
= 20 A
Discharge Time
t
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
2
4. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
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2
NTMFS6D1N08H
a) 53°C/W when mounted on
b) 125°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
5. Pulse Test: pulse width < 300 ms, duty cycle < 2%.
6. E of 465 mJ is based on started T = 25°C, I = 5.9 A, V = 80 V, V = 10 V. 100% test at I = 8.4 A.
AS
J
AS
DD
GS
AS
7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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3
NTMFS6D1N08H
TYPICAL CHARACTERISTICS
100
150
140
130
120
110
100
90
80
70
60
50
V
= 6.5 V to 10 V
GS
5.5 V
5.0 V
90
80
70
60
50
40
30
20
V
DS
= 10 V
6.0 V
40
30
20
T = 25°C
J
4.5 V
4.0 V
10
0
10
T = 125°C
J
T = −55°C
J
0
0
0.5 1.0
1.5 2.0 2.5 3.0
3.5 4.0
4.5
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.010
0.008
0.006
0.004
20
18
16
14
12
10
8
T = 25°C
J
T = 25°C
D
J
I
= 20 A
V
= 6 V
GS
V
GS
= 10 V
6
0.002
0
4
2
0
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
10K
1K
2.3
2.1
1.9
V
= 10 V
= 20 A
GS
T = 150°C
J
I
D
1.7
1.5
1.3
1.1
0.9
0.7
0.5
T = 85°C
J
100
T = 25°C
J
10
1
0.3
0.1
−0.1
−50 −25
0
25
50
75 100 125 150 175
5
15
V
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS6D1N08H
TYPICAL CHARACTERISTICS
10K
1K
12
C
ISS
10
8
C
OSS
RSS
100
Q
Q
GD
GS
6
4
C
10
1
V
DS
= 40 V
V
= 0 V
GS
T = 25°C
T = 25°C
2
0
J
J
I
D
= 30 A
f = 1 MHz
0
10
20
30
40
50
60
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
V
V
= 10 V
= 64 V
= 30 A
V
GS
= 0 V
GS
DS
I
D
t
t
t
d(off)
r
100
10
t
f
1
d(on)
T = 125°C
T = 25°C T = −55°C
J
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
10
T
= 100°C
1E−04
J(initial)
10 ms
1
R
Limit
DS(on)
0.5 ms
1 ms
10 ms
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
1E−05
1E−03
1E−02
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NTMFS6D1N08H
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2018
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