NTMFSS1D5N06CL [ONSEMI]
MOSFET, Power, Single, N-Channel, Source-Down, TDFN9, 60V, 1.5mΩ, 235A;
| 型号： | NTMFSS1D5N06CL |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power, Single, N-Channel, Source-Down, TDFN9, 60V, 1.5mΩ, 235A |
| 文件： | 总7页 (文件大小：365K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, Source-Down
TDFN9
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1.5 mW @ 10 V
2.3 mW @ 4.5 V
60 V
235 A
60 V, 1.5 mW, 235 A
D (5, 6, 7, 8)
NTMFSS1D5N06CL
Features
G (9)
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
S (1, 2, 3, 4)
N−CHANNEL MOSFET
• Low Q and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS
Compliant
Typical Applications
MARKING
DIAGRAM
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
1D5N06
AYWZZ
TDFN9 5x6
CASE 520AE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
1D5N06 = Specific Device Code
V
DSS
A
Y
= Assembly Location
= Year
Gate−to−Source Voltage
V
GS
20
V
W
ZZ
= Work Week
= Wafer Lot
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
237
149
144
57
A
C
Steady
State
q
JC
T
C
Power Dissipation
R
T
C
P
D
W
A
Steady
State
ORDERING INFORMATION
q
JC
T
C
= 100°C
†
Device
NTMFSS1D5N06CL
Package
Shipping
Continuous Drain Cur-
T = 25°C
A
I
D
31
Steady
State
TDFN9
(Pb−Free)
3000 / Tape &
Reel
rent R
(Notes 1, 2)
q
JA
T = 100°C
A
19
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Power Dissipation
(Notes 1, 2)
T = 25°C
P
2.5
1
W
A
D
Steady
State
R
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
1698
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
Single Pulse Drain−to−Source Avalanche
E
AS
207
mJ
Energy (I
= 75 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.86
50
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2023 − Rev. 3
NTMFSS1D5N06CL/D
NTMFSS1D5N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
23.2
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
GS
= 0 V, V = 60 V T = 25°C
10
mA
DSS
DS
J
I
V
DS
= 0 V, V = 20 V
100
nA
GSS
GS
V
V
GS
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 250 mA, ref to 25°C
D
−5.76
1.05
1.42
151
1
mV/°C
mW
GS(TH)
J
R
V
= 10 V, I = 50 A
1.5
2.3
DS(on)
GS
GS
D
V
= 4.5 V, I = 50 A
D
Forward Transconductance
Gate Resistance
g
FS
V
DS
= 15 V, I = 50 A
S
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
7526
3462
42
pF
nC
ISS
Output Capacitance
Reverse Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = 30 V
DS
OSS
RSS
GS
C
Q
V
GS
= 10 V, V = 30 V, I = 50 A
102.6
46.1
8.4
G(TOT)
Q
G(TOT)
DS
D
Total Gate Charge
Gate−to−Drain Charge
Gate−to−Source Charge
Plateau Voltage
Q
Q
GD
GS
GP
V
GS
= 4.5 V, V = 30 V, I = 50 A
DS D
21
V
2.9
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
16
7.1
ns
d(ON)
t
r
V
= 4.5 V, V = 30 V,
DD
GS
D
I
= 50 A, R = 1.0 W
G
Turn−Off Delay Time
Fall Time
t
41.3
5.4
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.66
83
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
39.9
43.2
142
a
V
GS
= 0 V, dI/dt = 100 A/ms,
I
S
= 50 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTMFSS1D5N06CL
TYPICAL CHARACTERISTICS
250
240
220
200
180
160
140
120
100
80
V
= 10 V to 4.5 V
GS
V
DS
= 10 V
3.2 V
3.4 V
200
150
100
3.0 V
2.8 V
T = 25°C
J
60
2.6 V
2.4 V
50
0
40
20
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
2.0
2.0
1.8
T = 25°C
J
T = 25°C
D
J
I
= 50 A
1.6
1.4
1.2
1.0
0.8
V
= 4.5 V
= 10 V
GS
V
GS
1.5
1.0
0.6
0.4
3
4
5
6
7
8
9
10
20 40
60
80 100 120 140 160 180 200
I , DRAIN CURRENT (A)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.9
1.7
1.5
1.3
1.1
0.9
100K
10K
1K
V
= 10 V
= 50 A
GS
T = 150°C
J
I
D
T = 125°C
J
T = 85°C
J
100
T = 25°C
J
10
1
0.7
0.5
−50 −25
0
25
50
75
100
125
150
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFSS1D5N06CL
TYPICAL CHARACTERISTICS
10K
1K
10
C
ISS
V
= 30 V
DS
9
8
7
6
5
4
3
2
T = 25°C
J
I
D
= 50 A
C
OSS
100
Q
GD
Q
GS
C
RSS
10
1
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
10
20
30
40
50
60
0
20
40
60
80
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
1000
100
t
d(off)
V
GS
= 0 V
V
V
I
= 10 V
= 30 V
= 50 A
GS
DS
t
f
D
t
r
t
d(on)
1
10
1
T = 125°C
J
T = 25°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
10 ms
100 ms
T
= 100°C
J(initial)
T
= 25°C
C
10
1
1 ms
Single Pulse
≤ 10 V
V
GS
10 ms
R
Limit
DS(on)
1
Thermal Limit
Package Limit
100 ms
0.1
0.1
1
10
100
0.000001 0.00001 0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE(V)
T , TIME IN AVALANCHE (s)
AV
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFSS1D5N06CL
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
0.01
1%
Single Pulse
0.000001
0.001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TDFN9 5x6, 1.27P
CASE 520AE
ISSUE B
DATE 24 NOV 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
= Assembly Location
WL = Wafer Lot
= Year Code
WW = Work Week Code
*This information is generic. Please refer to
XXXXXX
XXXXXX
AWLYWW
A
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Y
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON99041G
TDFN9 5x6, 1.27P
PAGE 1 OF 1
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