NTMJS0D8N04CLTWG [ONSEMI]
Power MOSFET 40 V, 0.83Ω, 336 A, Single N-Channel;
| 型号： | NTMJS0D8N04CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 40 V, 0.83Ω, 336 A, Single N-Channel |
| 文件： | 总7页 (文件大小：369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, Single
N-Channel
40 V, 0.72 mW, 368 A
NTMJS0D8N04CL
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• LFPAK8 Package, Industry Standard
0.72 mW @ 10 V
1.15 mW @ 4.5 V
• These Devices are Pb−Free and are RoHS Compliant
40 V
368 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
D (5−8)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
368
260
180
90
A
C
D
q
JC
T
C
(Notes 1, 3)
G (4)
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
56
q
JA
T = 100°C
A
40
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
P
4.2
2.1
900
W
A
D
MARKING
DIAGRAM
R
(Notes 1, 2)
q
JA
T = 100°C
A
D
D
D
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
0D8N04
CL
LFPAK8
CASE 760AA
ALLYW
Source Current (Body Diode)
I
150
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
1286
mJ
1
Energy (I
= 32.8 A)
L(pk)
S
S
S G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
0D8N04CL = Specific Device Code
A
LL
Y
= Assembly Location
= Wafer Lot
= Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.83
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
35.9
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
November, 2019 − Rev. 0
NTMJS0D8N04CL/D
NTMJS0D8N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
18
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 40 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.7
0.60
0.91
500
mV/°C
mW
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
0.72
1.15
DS(on)
GS
D
V
GS
= 4.5 V
D
Forward Transconductance
g
FS
V
=15 V, I = 50 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
9600
4690
119
78
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 32 V; I = 50 A
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 32 V; I = 50 A
162
14
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
25
GS
GD
GP
V
GS
= 10 V, V = 32 V; I = 50 A
DS
D
Q
V
29
2.7
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
36
50
81
37
ns
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 32 V,
DS
GS
D
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.73
0.6
83
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
53
a
V
GS
= 0 V, dI /dt = 100 A/ms,
s
I
S
= 50 A
Discharge Time
30
b
Reverse Recovery Charge
Q
163
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMJS0D8N04CL
TYPICAL CHARACTERISTICS
360
320
280
240
200
160
400
10 V to 4 V
360
320
280
240
200
160
120
80
V
DS
= 10 V
3.6 V
V
= 3.2 V
GS
T = 25°C
J
120
80
40
0
2.4 V
3
2.8 V
2.6 V
40
0
T = 125°C
J
T = −55°C
J
0
1
2
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
T = 25°C
D
J
T = 25°C
J
I
= 50 A
V
V
= 4.5 V
= 10 V
GS
GS
1.0
0.5
0.6
0.4
2
3
4
5
6
7
8
9
10
50
100
150
200
250
300
350 400
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.9
1.7
1.5
1.3
1.1
0.9
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
V
I
= 10 V
= 50 A
T = 175°C
J
GS
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
T = 25°C
J
0.7
0.5
1E+03
1E+02
−50 −25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMJS0D8N04CL
TYPICAL CHARACTERISTICS
10
100K
10K
T = 25°C
J
9
8
7
6
5
4
3
2
I
D
= 50 A
C
V
DS
= 32 V
ISS
C
C
OSS
1K
Q
Q
GD
GS
RSS
100
10
V
= 0 V
GS
T = 25°C
J
1
0
f = 1 MHz
0
20
40
60
80
100
120
140 160
0
5
10
15
20
25
30
35
40
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
t
d(off)
V
GS
= 0 V
1000
100
t
f
t
t
r
d(on)
1
0.1
10
1
V
V
= 10 V
= 32 V
= 50 A
GS
0.01
DS
T = 175°C
J
I
D
T = −55°C
J
T = 25°C
J
0.001
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10 ms
T
= 25°C
J(initial)
T
= 25°C
C
1 ms
10 ms
Single Pulse
≤ 10 V
V
GS
T
= 100°C
10
1
J(initial)
100 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
t , TIME IN AVALANCHE (s)
AV
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMJS0D8N04CL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMJS0D8N04CLTWG
0D8N04CL
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 5x6
CASE 760AA
ISSUE C
DATE 13 AUG 2019
GENERIC
MARKING DIAGRAM*
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
W
= Wafer Lot
= Year
= Work Week
XXXXXX
XXXXXX
AWLYW
*This information is generic. Please refer
to device data sheet for actual part
marking. Some products may not follow
the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON82475G
LFPAK8 5x6
PAGE 1 OF 1
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