NTMT110N65S3HF [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 30 A, 110 mΩ, Power88;
| 型号： | NTMT110N65S3HF |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 30 A, 110 mΩ, Power88 |
| 文件： | 总10页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power,
N-Channel, SUPERFET) III,
FRFET)
650 V, 30 A, 110 mW
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
110 mꢀ @ 10 V
30 A
D
NTMT110N65S3HF
Description
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on−resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
G
S1: Driver Source
S2: Power Source
S1
S2
POWER MOSFET
Consequently, SUPERFET III MOSFET is very suitable for the
various power systems for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery
performance of body diode can remove additional components and
improve system reliability.
TDFN4 8X8
CASE 520AB
The TDFN4 package is an ultra−slim surface−mount package
(1 mm high) with a low profile and small footprint (8x8 mm ).
2
MARKING DIAGRAM
SUPERFET III MOSFET in a TDFN4 package offers excellent
switching performance due to lower parasitic source inductance and
separated power and drive sources. TDFN4 offers Moisture
Sensitivity Level 1 (MSL 1).
NTMT110
N65S3HF
AWLYWW
Features
• 700 V @ T = 150 °C
J
NTMT110N65S3HF = Specific Device Code
• Typ R
= 98 mꢀ
DS(on)
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
• Ultra Low Gate Charge (Typ. Q = 62 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 522 pF)
oss(eff.)
WW
= Work Week
• These Devices are Pb−Free and are RoHS Compliant
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
• Lighting / Charger / Adapter
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2022 − Rev. 1
NTMT110N65S3HF/D
NTMT110N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
30
A
C
Continuous (T = 100°C)
19.5
69
C
I
Drain Current
Pulsed (Note 1)
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
380
AS
AS
I
4.4
E
2.4
mJ
V/ns
AR
dv/dt
100
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
240
W
W/°C
°C
D
C
Derate Above 25°C
1.92
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 4.4 A, R = 25 ꢀ starting T = 25°C
AS
G
J
3. I ≤ 15 A, di/dt ≤ 100 A/ꢁ s, V ≤ 400 V, starting T = 25°C
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.52
45
Unit
Thermal Resistance, Junction to Case, Max.
°C/W
R
R
ꢂ
JC
JA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
ꢂ
2
4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
13.3 mm
Shipping
NTMT110N65S3HF
NTMT110N65S3HF
TDFN4
13”
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTMT110N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
V
V
= 0 V, I = 1 mA, T = 25°C
650
700
−
−
−
−
−
−
V
V
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150°C
GS
D
J
ꢃ
B
V
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, referenced to 25°C
0.64
V/°C
DSS
J
/ꢃ T
I
Zero Gate Voltage Drain Current
V
V
V
= 650 V, V = 0 V
−
−
−
−
16
−
10
ꢁ A
nA
V
DSS
DS
DS
GS
GS
= 520 V, T = 125 °C
C
I
Gate to Source Leakage Current
=
30 V, V = 0 V
100
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.74 mA
3.0
−
−
5.0
110
−
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 15 A
98
18
mꢀ
D
g
= 20 V, I = 15 A
−
S
FS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
2635
52
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
ꢀ
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
522
91
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 15 A, V = 10 V
62
g(tot)
D
GS
(Note 5)
Q
18
gs
Q
25
gd
ESR
f = 1 MHz
2.8
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
V
= 400 V, I = 15 A,
−
−
−
−
28
14
72
3.3
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 4.7 ꢀ
GEN
t
r
(Note 5)
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
SOURCE−DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
30
69
1.3
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 15 A
−
V
GS
SD
t
rr
= 0 V, I = 15 A,
89
355
ns
nC
GS
SD
di /dt = 100 A/ꢁ s
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
NTMT110N65S3HF
TYPICAL CHARACTERISTICS
100
10
1
100
V
=
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
GS
* Notes:
1. V = 20 V
DS
2. 250 ꢁ s Pulse Test
150°C
10
25°C
−55°C
* Notes:
1. 250 ꢁ s Pulse Test
2. T = 25°C
C
0.1
1
3
4
5
6
7
8
9
10
0.2
1
10
20
V , Drain-Source Voltage [V]
DS
V , Gate-Source Voltage [V]
GS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.2
0.1
0.0
1000
100
10
* Note: T = 25°C
C
* Notes:
1. V = 0 V
GS
2. 250 ꢁ s Pulse Test
150°C
25°C
1
V
= 10 V
GS
−55°C
0.1
V
= 20 V
GS
0.01
0.001
0.0
0.5
1.0
1.5
2.0
0
20
40
I , Drain Current [A]
60
80
V
SD
, Body Diode Forward Voltage [V]
D
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100000
10
* Note: I = 15 A
D
10000
1000
100
C
iss
8
6
4
2
0
V
= 130 V
DS
V
= 400 V
DS
C
oss
* Notes:
10
1
1. V = 0 V
GS
2. f = 1 MHz
C
C
C
C
= C (C = shorted)
gd ds
= C + C
= C
rss
iss
oss
rss
ds
gd
gd
0.01
0.1
1
10
100
1000
0
20
40
60
V , Drain-Source Voltage [V]
DS
Q , Total Gate Charge [nC]
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTMT110N65S3HF
TYPICAL CHARACTERISTICS
1.2
1.1
3.0
* Notes:
* Notes:
1. V = 0 V
GS
1. V = 10 V
GS
2. I = 10 mA
D
2.5
2.0
1.5
2. I = 15 A
D
1.0
0.9
0.8
1.0
0.5
0.0
−50
0
50
100
150
−50
0
50
100
150
T , Junction Temperature [5C]
J
T , Junction Temperature [5C]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
200
30
100
10
30 ꢁ s
100 ꢁ s
1 ms
20
10
0
10 ms
1
DC
Operation in This Area
is Limited by R
DS(on)
* Notes:
0.1
0.01
1. T = 25°C
J
2. T = 150°C
J
3. Single Pulse
1
10
100
1000
25
50
75
100
125
150
V , Drain-Source Voltage [V]
DS
T , Case Temperature [5C]
C
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
16
12
8
4
0
0
130
260
390
520
650
V , Drain to Source Voltage [V]
DS
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTMT110N65S3HF
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
P
0.1
DM
0.02
0.01
t
1
t
2
Notes:
(t) = r(t) × R
0.01
SINGLE PULSE
Z
ꢂ
ꢂ
JC
JC
R
ꢂ
= 0.52°C/W
JC
Peak T = P
× Z (t) + T
ꢂ
JC C
J
DM
Duty Cycle, D = t / t
1
2
0.001
−5
−4
−3
−2
−1
0
1
2
10
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
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6
NTMT110N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTMT110N65S3HF
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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8
NTMT110N65S3HF
PACKAGE DIMENSIONS
TDFN4 8x8, 2P
CASE 520AB
ISSUE O
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9
NTMT110N65S3HF
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Com-
ponents Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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◊
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ONSEMI
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