NTMTSC002N10MCTXG [ONSEMI]
Single N-Channel Power MOSFET 100V, 236A, 2.0mΩ;
| 型号： | NTMTSC002N10MCTXG |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 100V, 236A, 2.0mΩ |
| 文件： | 总7页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
100 V, 2.0 mW, 236 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
100 V
2.0 mW @ 10 V
236 A
D (5−8)
NTMTSC002N10MC
Features
• Small Footprint (8x8 mm) for Compact Design
G (1)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (2−4)
• New Power 88 Dual Cool Package
• These Devices are Pb−Free and are RoHS Compliant
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
TDFNW8
CASE 507AN
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
236
167
255
128
29
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
MARKING DIAGRAM
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
20
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.9
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
1.9
002N10M AWLYW
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
002N10M = Specific Device Code
= Assembly Location
WL = Wafer Lot Code
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
A
Source Current (Body Diode)
I
S
213
A
Y
= Year Code
W
= Work Week Code
Single Pulse Drain−to−Source Avalanche
E
AS
2223
mJ
Energy (I
= 18.2 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.6
Unit
Junction−to−Case, Bottom − Steady State
Junction−to−Case, Top − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JCB
R
0.9
q
JCT
R
38
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2021 − Rev. 1
NTMTSC002N10MC/D
NTMTSC002N10MC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
68.7
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25 °C
5
DSS
GS
J
V
= 100 V
mA
T = 125°C
J
10
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
GS
V
V
= V , I = 520 mA
2.0
4.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−9.86
mV/°C
GS(TH)
J
R
V
= 6 V
I
I
= 46 A
= 90 A
5.3
2.0
DS(on)
GS
D
mW
V
GS
= 10 V
1.7
D
Forward Transconductance
g
FS
V
DS
=5 V, I = 93 A
180
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
6305
3405
37
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 50 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 50 V; I = 93 A
89
G(TOT)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
17
G(TH)
nC
V
Q
28
GS
GD
GP
V
GS
= 10 V, V = 50 V; I = 93 A
DS
D
Q
V
21
4.8
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
29
19
59
26
d(ON)
Rise Time
t
r
V
= 10 V, V = 50 V,
DS
GS
D
ns
V
I
= 93 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.72
49
1.2
SD
RR
J
V
S
= 0 V,
GS
I
= 90 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
24
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 46 A
Discharge Time
t
26
b
Reverse Recovery Charge
Reverse Recovery Time
Charge Time
Q
44
nC
RR
t
38
RR
t
a
t
b
21
ns
V
GS
= 0 V, dIS/dt = 1000 A/ms,
I
= 46 A
S
Discharge Time
18
Reverse Recovery Charge
Q
310
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMTSC002N10MC
TYPICAL CHARACTERISTICS
250
200
150
100
250
V
GS
= 10 to 6 V
5.5 V
200
150
T = 25°C
J
100
5.0 V
50
0
50
4.5 V
T = 125°C
T = −55°C
J
4.0 V
J
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
20
15
10
T = 25°C
J
T = 25°C
D
J
I
= 90 A
V
= 6 V
GS
V
GS
= 10 V
5
0
1
0
2
3
4
5
6
7
8
9
10
10
60
110
160
210
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current
Voltage
100K
10K
1K
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
T = 150°C
J
I
V
= 90 A
D
= 10 V
GS
T = 125°C
J
T = 85°C
J
100
10
T = 25°C
J
1
0.1
0.01
0.6
0.4
−50 −25
0.001
0
25
50
75 100 125 150 175
10
20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMTSC002N10MC
TYPICAL CHARACTERISTICS
100K
10K
12
10
8
C
C
ISS
OSS
1K
6
Q
Q
GD
GS
100
C
RSS
4
V
= 50 V
= 93 A
DS
V
= 0 V
10
1
GS
2
0
I
D
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
0
10 20 30 40
50 60 70 80 90 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
V
= 0 V
GS
V
V
= 10 V
= 50 V
= 83 A
GS
DS
I
D
50
T = 175°C
J
t
d(off)
d(on)
t
t
T = 150°C
J
T = 125°C
J
f
T = 25°C
J
1
t
r
T = −55°C
J
5
0.1
1
10
R , GATE RESISTANCE (W)
100
0.1
0.3
0.5
0.7
0.9
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1000
100
10 ms
T
= 25°C
J(initial)
T
C
= 25°C
Single Pulse
≤ 10 V
0.5 ms
1 ms
10 ms
10
1
V
GS
T
= 100°C
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMTSC002N10MC
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
20%
10%
5%
0.1
0.01
2%
1%
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 13. Junction−to−Ambient Transient Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMTSC002N10MCTXG
002N10M
POWER 88 Dual Cool
3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMTSC002N10MC
PACKAGE DIMENSIONS
TDFNW8 8.3x8.4, 2P
CASE 507AN
ISSUE B
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6
NTMTSC002N10MC
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