NTP055N65S3H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 47 A, 55 mΩ, TO-220;
| 型号： | NTP055N65S3H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 47 A, 55 mΩ, TO-220 |
| 文件： | 总10页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power,
N‐Channel, SUPERFET) III,
FAST
650 V, 55 mW, 47 A
NTP055N65S3H
www.onsemi.com
Description
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
55 mW @ 10 V
47 A
D
Consequently, SUPERFET III FAST MOSFET series helps
minimize various power systems and improve system efficiency.
Features
G
• 700 V @ T = 150°C
J
• Typ. R
= 45 mW
DS(on)
S
• Ultra Low Gate Charge (Typ. Q = 96 nC)
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 880 pF)
oss(eff.)
• These Devices are Pb−Free and are RoHS Compliant
Applications
G
D
S
• Telecom / Server Power Supplies
• Industrial Power Supplies
• EV Charger
TO−220−3LD
CASE 340AT
• UPS / Solar
MARKING DIAGRAM
$Y&Z&3&K
NTP055
N65S3H
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
&Z
&3
&K
NTP055N65S3H
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2020 − Rev. 1
NTP055N65S3H/D
NTP055N65S3H
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
47
A
C
Continuous (T = 100°C)
30
C
I
Drain Current
Pulsed (Note 1)
132
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
491
AS
AS
I
6.8
E
3.05
120
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
305
W
W/°C
°C
D
C
Derate Above 25°C
2.44
−55 to +150
260
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 6.8 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 23.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.41
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
q
JC
JA
R
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
50 Units / Tube
NTP055N65S3H
NTP055N65S3H
TO−220−3LD
(Pb-Free / Halogen Free)
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2
NTP055N65S3H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25_C
0.63
3.2
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
DS
= 650 V, V = 0 V
2
mA
DSS
GS
V
= 520 V, T = 125_C
DS
C
I
Gate to Body Leakage Current
V
=
30 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 4.8 mA
2.4
4.0
55
V
mW
S
GS(th)
DS(on)
GS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
V
V
= 10 V, I = 23.5 A
45
52
GS
D
g
FS
= 20 V, I = 23.5 A
D
DS
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 250 kHz
4305
73
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
= 0 V to 400 V, V = 0 V
880
127
96
oss(eff.)
DS
GS
C
V
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
g(tot)
V
DS
= 400 V, I = 23.5 A, V = 10 V
D GS
Q
23
gs
(Note 4)
Q
27
gd
ESR
f = 1 MHz
0.6
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
30
16
90
2.8
ns
ns
ns
ns
d(on)
V
= 400 V, I = 23.5 A,
D
t
r
DD
V
= 10 V, R = 4.7 W
GS
g
t
d(off)
(Note 4)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
Source to Drain Diode Forward
47
132
1.2
A
A
V
S
I
SM
V
SD
V
GS
= 0 V, I = 23.5 A
SD
Voltage
t
Reverse Recovery Time
Reverse Recovery Charge
481
7.7
ns
rr
V
DD
= 400 V, I = 23.5 A,
SD
F
dI /dt = 100 A/ms
Q
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NTP055N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1000
100
80
10 V
6.0 V
250 ms Pulse Test
V = 20 V
5.5 V
5.0 V
DS
7.0 V
250 ms Pulse Test
= 25°C
100
T
C
60
40
10
1
4.5 V
T = 25°C
J
20
0
V
= 4.0 V
GS
T = −55°C
T = 150°C
J
J
0
5
10
15
20
2
0
0
3
4
5
6
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
= 25°C
Figure 2. Transfer Characteristics
1000
100
0.10
0.08
0.06
0.04
V
= 0 V
T
GS
C
250 ms Pulse Test
V
= 10 V
GS
10
1
V
= 20 V
GS
0.02
0
T = 150°C
J
T = 25°C
T = −55°C
J
J
0.1
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
D
Figure 3. On−Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Drain Current and Gate Voltage
6
10
10
8
C
C
C
= C + C (C = shorted)
gs gd ds
V
= 130 V
V
= 0 V
f = 250 KHz
iss
DD
GS
I
D
= 23.5 A
5
= C + C
oss
rss
ds
gd
10
= C
gd
4
10
C
iss
V
DD
= 400 V
3
6
10
C
2
oss
10
4
1
10
C
rss
2
0
0
10
−1
10
0
100
200
300
400
500
600
25
50
75
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
NTP055N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1.2
1.1
1.0
3.0
V
I
= 0 V
= 10 mA
V
I
= 10 V
= 23.5 A
GS
GS
D
2.5
2.0
1.5
1.0
D
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
1000
100
10
50
40
30
20
10 ms
100 ms
Operation in this
Area is Limited
1 ms
by R
DS(on)
1
10 ms
100
10
0
T
= 25°C
C
DC
T = 150°C
J
Single Pulse
0.1
1
10
1000
25
50
75
100
125
150
V
DS
, DRAIN−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
15
10
5
0
0
100
200
300
400
500
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain to Source Voltage
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5
NTP055N65S3H
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
P
DM
Z
q
(t) = r(t) x R
q
JC
JC
0.01
R
= 0.41°C/W
q
JC
Peak T = P
Duty Cycle, D = t /t
x Z (t) + T
q
JC C
t
J
DM
1
Single Pulse
0.00001
t
1
2
2
0.01
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Impedance
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6
NTP055N65S3H
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NTP055N65S3H
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
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