NTP75N06D [ONSEMI]
Power MOSFET; 功率MOSFET
| 型号： | NTP75N06D |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总8页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP75N06, NTB75N06
Power MOSFET
75 Amps, 60 Volts, N−Channel
TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
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75 AMPERES, 60 VOLTS
Features
RDS(on) = 9.5 mW
• Pb−Free Packages are Available
N−Channel
D
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING
DIAGRAMS
Rating
Symbol Value
Unit
Vdc
Vdc
Vdc
Drain−to−Source Voltage
V
60
60
DSS
DGR
4
Drain
Drain−to−Gate Voltage (R = 10 MW)
V
GS
4
Gate−to−Source Voltage
− Continuous
V
V
"20
"30
GS
GS
− Non−Repetitive (t v10 ms)
p
TO−220
CASE 221A
STYLE 5
Drain Current
− Continuous @ T = 25°C
75N06
AYWW
I
I
75
50
225
Adc
Apk
A
D
D
− Continuous @ T = 100°C
A
− Single Pulse (t v10 ms)
I
p
DM
1
Gate
3
1
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
214
1.4
2.4
W
W/°C
W
A
2
Source
3
2
Total Power Dissipation @ T = 25°C
A
Drain
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
T , T
−55 to
+175
°C
J
stg
4
Drain
E
AS
844
mJ
Energy − Starting T = 25°C
J
4
2
75N06
AYWW
D PAK
(V = 50 Vdc, V = 10 Vdc, L = 0.3 mH
DD
GS
CASE 418B
STYLE 2
I
= 75 A, V = 60 Vdc)
DS
L(pk)
2
Thermal Resistance
− Junction−to−Case
°C/W
°C
R
R
0.7
62.5
q
JC
JA
3
2
− Junction−to−Ambient
q
1
Gate
3
Drain
Source
Maximum Lead Temperature for Soldering
T
260
L
Purposes, 1/8″ from case for 10 seconds
75N06
= Device Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
A
Y
WW
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
August, 2004 − Rev. 2
NTP75N06/D
NTP75N06, NTB75N06
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V = 0 Vdc, I = 250 mAdc)
V
Vdc
(BR)DSS
60
−
71
73
−
−
GS
D
Temperature Coefficient (Positive)
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 60 Vdc, V = 0 Vdc)
−
−
−
−
10
100
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc)
I
−
−
±100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V = V , I = 250 mAdc)
V
GS(th)
2.0
−
2.8
8.0
4.0
−
DS
GS
D
Threshold Temperature Coefficient (Negative)
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 1)
R
V
DS(on)
(V = 10 Vdc, I = 37.5 Adc)
−
8.2
9.5
GS
D
Static Drain−to−Source On−Voltage (Note 1)
(V = 10 Vdc, I = 75 Adc)
Vdc
DS(on)
−
−
0.72
0.63
0.86
−
GS
D
(V = 10 Vdc, I = 37.5 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 1) (V = 15 Vdc, I = 37.5 Adc)
g
FS
−
40.2
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
3220
1020
234
4510
1430
330
iss
(V = 25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
t
−
−
−
−
−
−
−
16
112
90
25
155
125
140
130
−
ns
d(on)
Rise Time
t
r
(V = 30 Vdc, I = 75 Adc,
DD
D
V
= 10 Vdc, R = 9.1 W) (Note 1)
G
GS
Turn−Off Delay Time
t
d(off)
Fall Time
t
f
100
92
Gate Charge
Q
T
Q
1
Q
2
nC
(V = 48 Vdc, I = 75 Adc,
DS
D
14
V
GS
= 10 Vdc) (Note 1)
44
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 75 Adc, V = 0 Vdc) (Note 1)
V
SD
−
−
1.0
0.9
1.1
−
Vdc
ns
S
GS
(I = 75 Adc, V = 0 Vdc, T = 150°C)
S
GS
J
Reverse Recovery Time
t
rr
−
−
−
−
77
49
−
−
−
−
(I = 75 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms) (Note 1)
S
t
b
28
Reverse Recovery Stored Charge
Q
0.16
mC
RR
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
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2
NTP75N06, NTB75N06
160
140
120
160
V
DS
w 10 V
V
GS
= 10 V
V
= 6.5 V
140
120
GS
V
= 6 V
GS
V
= 7 V
GS
100
80
100
80
V
= 8 V
GS
V
= 5.5 V
GS
V
GS
= 9 V
60
60
40
40
V
GS
= 5 V
T = 25°C
J
20
0
20
0
T = 100°C
J
V
= 4.5 V
GS
T = −55°C
J
0
1
2
3
4
2.5
3
3.5
V , GATE−TO−SOURCE VOLTAGE (V)
GS
4
4.5
5
5.5
6
6.5
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.013
0.015
0.013
V
GS
= 10 V
V
GS
= 15 V
T = 100°C
J
T = 100°C
J
0.011
0.009
0.007
0.005
0.011
0.009
0.007
0.005
T = 25°C
J
T = 25°C
J
T = −55°C
J
T = −55°C
J
0.003
0.003
0
20
40
60
80
100
120
140 160
0
20
40
60
80
100
120
140 160
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
2
1.8
1.6
1.4
1.2
1
I
V
= 37.5 A
V
GS
= 0 V
D
T = 150°C
J
= 10 V
GS
1000
100
10
T = 125°C
J
T = 100°C
J
0.8
0.6
−50 −25
0
25
50
75 100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTP75N06, NTB75N06
10000
8000
6000
4000
2000
0
12
V
= 0 V
V
= 0 V
T = 25°C
DS
GS
J
Q
T
10
8
C
V
iss
GS
Q
1
C
Q
rss
2
6
C
iss
4
C
oss
2
I
= 75 A
D
C
rss
T = 25°C
J
0
10
5
V
GS
0 V
5
10
15
20
25
0
10 20 30 40 50
60 70 80 90 100
DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
80
70
60
50
40
30
20
V
= 0 V
GS
T = 25°C
J
t
t
f
r
t
d(off)
10
1
t
d(on)
V
I
= 30 V
= 75 A
= 5 V
DS
10
0
D
V
GS
1
10
R , GATE RESISTANCE (W)
100
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.86 0.92 0.96
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variations
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
1000
800
600
400
200
0
V
= 20 V
I
D
= 75 A
GS
10 ms
SINGLE PULSE
= 25°C
T
C
100 ms
1 ms
10 ms
dc
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTP75N06, NTB75N06
1.0
D = 0.5
0.2
0.1
P
(pk)
0.1
0.05
R
(t) = r(t) R
q
JC
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.02
t
1
READ TIME AT t
1
0.01
t
2
T
J(pk)
− T = P
R
q
(t)
JC
C
(pk)
DUTY CYCLE, D = t /t
1
2
SINGLE PULSE
0.0001
0.01
0.00001
0.001
0.01
t, TIME (ms)
0.1
1.0
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
†
Package
Shipping
NTP75N06
TO−220
50 Units/Rail
50 Units/Rail
NTP75N06G
TO−220
(Pb−Free)
2
NTB75N06
D PAK
50 Units/Rail
50 Units/Rail
2
NTB75N06G
D PAK
(Pb−Free)
2
NTB75N06T4
D PAK
800 Tape & Reel
800 Tape & Reel
2
NTB75N06T4G
D PAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTP75N06, NTB75N06
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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6
NTP75N06, NTB75N06
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
K
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
W
J
G
K
L
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
H
M
N
P
R
S
V
D 3 PL
M
M
T B
0.13 (0.005)
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
VARIABLE
CONFIGURATION
ZONE
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NTP75N06, NTB75N06
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your
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NTP75N06/D
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