NTR4503NT1G [ONSEMI]
Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23; 功率MOSFET的30 V ， 2.5 A单N沟道， SOT -23
| 型号： | NTR4503NT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23 |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTR4503N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
• Leading Planar Technology for Low Gate Charge / Fast Switching
• 4.5 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
• Pb−Free Package is Available
http://onsemi.com
V
R
TYP
I MAX
D
(BR)DSS
DS(on)
Applications
85 mW @ 10 V
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
30 V
2.5 A
105 mW @ 4.5 V
N−Channel
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value
Unit
V
D
V
30
±20
2.0
DSS
Gate−to−Source Voltage
V
V
GS
Continuous Drain
Current (Note 1)
Steady T = 25°C
State
I
D
A
A
G
T = 85°C
A
1.5
t ≤ 10 s T = 25°C
2.5
A
S
Power Dissipation
(Note 1)
Steady T = 25°C
State
P
0.73
W
A
A
D
MARKING DIAGRAM/
PIN ASSIGNMENT
Continuous Drain
Current (Note 2)
Steady T = 25°C
I
D
1.5
1.1
A
State
T = 85°C
A
3
3
Power Dissipation
(Note 2)
T = 25°C
A
P
D
0.42
W
Drain
1
Pulsed Drain Current
t = 10 ms
I
6.0
A
V
2
p
DM
TR3
ESD Capability (Note 3)
C = 100 pF,
RS = 1500 W
ESD
125
SOT−23
CASE 318
STYLE 21
1
Gate
2
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
Source
T
stg
Source Current (Body Diode)
I
2.0
A
TR3 = Specific Device Code
= Date Code
S
M
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†
Device
Package
Shipping
NTR4503NT1
SOT−23
3000/Tape & Reel
THERMAL RESISTANCE RATINGS
SOT−23
(Pb−Free)
NTR4503NT1G
3000/Tape & Reel
10000/Tape & Reel
Parameter
Symbol
Max
170
100
300
Unit
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
q
q
JA
JA
JA
SOT−23
(Pb−Free)
NTR4503NT3G
R
R
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
March, 2005 − Rev. 3
NTR4503N/D
NTR4503N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = 250 mA
30
36
V
(BR)DSS
GS
D
I
V
= 0 V, V = 24 V
1.0
10
mA
DSS
GS
DS
V
GS
= 0 V, V = 24 V, T = 125°C
DS J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.0
1.75
85
3.0
110
140
V
GS(TH)
GS
DS
D
Drain−to−Source On−Resistance
R
V
= 10 V, I = 2.5 A
mW
DS(on)
GS
GS
DS
D
V
V
= 4.5 V, I = 2.0 A
105
5.3
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
= 4.5 V, I = 2.5 A
S
FS
D
C
135
52
pF
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= 15 V
Reverse Transfer Capacitance
Input Capacitance
C
15
rss
C
130
42
250
75
pF
nC
iss
V
= 0 V, f = 1.0 MHz,
= 24 V
GS
Output Capacitance
C
oss
V
DS
Reverse Transfer Capacitance
Total Gate Charge
C
13
25
rss
Q
Q
3.6
0.3
0.6
0.7
1.9
0.3
0.6
0.9
7.0
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 10 V, V = 15 V,
DS
I
D
= 2.5 A
Q
GS
GD
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
GS
= 4.5 V, V = 24 V,
DS
I
D
= 2.5 A
Q
GS
GD
Q
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
5.8
5.8
14
12
10
25
5.0
ns
ns
d(on)
t
r
V
V
= 10 V, V = 15 V,
DD
GS
I
= 1 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
1.6
4.8
6.7
13.6
1.8
Turn−On Delay Time
Rise Time
d(on)
t
r
= 10 V, V = 24 V,
GS
D
DD
I
= 2.5 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
= 0 V, I = 2.0 A
0.85
9.2
1.2
V
SD
RR
GS
S
t
ns
nC
V
GS
= 0 V, I = 2.0 A,
S
dI /dt = 100 A/ms
S
Q
4.0
RR
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTR4503N
TYPICAL PERFORMANCE CURVES
10
8
10 V
6 V
5 V
4.5 V
4.2 V
4 V
3.8 V
3.6 V
V
≥ 10 V
DS
T = 25°C
J
8
4
0
6
3.4 V
3.2 V
4
100°C
3 V
2.8 V
2.6 V
25°C
2
0
T = −55°C
J
0
1
2
3
4
2
3
4
5
6
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.3
0.25
0.2
I
= 2.5 A
D
T = 25°C
J
T = 25°C
J
0.11
0.10
0.09
V
GS
= 4.5 V
0.15
0.1
0.08
0.07
0.05
0
V
GS
= 10 V
4
2
3
5
6
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1000
100
10
1.8
V
GS
= 0 V
I
V
= 2.5 A
D
= 10 V
GS
1.6
T = 150°C
J
1.4
1.2
1.0
0.8
0.6
T = 100°C
J
1
−50 −25
0
25
50
75
100
125 150
5
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTR4503N
TYPICAL PERFORMANCE CURVES
300
200
15
10
15
V
GS
= 0 V
V
= 0 V
T = 25°C
J
DS
V
DS
C
iss
Q
G
10
C
rss
V
I
GS
5
0
100
0
5
0
Q
Q
GD
GS
= 2.5 A
D
C
oss
T = 25°C
J
10
5
0
5
10
15
20
25
30
0
1
2
3
4
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
3
2
V
I
= 24 V
= 2.5 A
= 10 V
V
GS
= 0 V
DD
T = 25°C
J
D
V
GS
t
d(off)
t
f
10
t
d(on)
t
r
1
0
1
1
10
R , GATE RESISTANCE (OHMS)
100
0.3
0.5
0.6
0.7
0.8
0.9
1
0.4
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
http://onsemi.com
4
NTR4503N
PACKAGE DIMENSIONS
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
L
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
S
C
B
1
2
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
V
G
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
H
J
D
K
K
L
S
V
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
NTR4503N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NTR4503N/D
相关型号：
NTR4D1202CTRF
Fixed Resistor, Thin Film, 0.0625W, 12000ohm, 25V, 0.5% +/-Tol, 25ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4D1202DTRF
Fixed Resistor, Thin Film, 0.0625W, 12000ohm, 25V, 0.5% +/-Tol, 50ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4D2402CTRF
Fixed Resistor, Thin Film, 0.0625W, 24000ohm, 25V, 0.5% +/-Tol, 25ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4D2402DTRF
Fixed Resistor, Thin Film, 0.0625W, 24000ohm, 25V, 0.5% +/-Tol, 50ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4F1601DTRF
Fixed Resistor, Thin Film, 0.0625W, 1600ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4F2150DTRF
Fixed Resistor, Thin Film, 0.0625W, 215ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4F2151DTRF
Fixed Resistor, Thin Film, 0.0625W, 2150ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4F2152DTRF
Fixed Resistor, Thin Film, 0.0625W, 21500ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
NTR4F6800DTRF
Fixed Resistor, Thin Film, 0.0625W, 680ohm, 25V, 1% +/-Tol, 50ppm/Cel, Surface Mount, 0402, CHIP, ROHS COMPLIANT
NICHICON
©2020 ICPDF网 联系我们和版权申明