NTSV3080CT_14 [ONSEMI]
Very Low Forward Voltage Trench-based Schottky Rectifier;
| 型号： | NTSV3080CT_14 |
| 厂家： | 
ONSEMI |
| 描述： | Very Low Forward Voltage Trench-based Schottky Rectifier |
| 文件： | 总5页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTSV3080CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.471 V at IF = 5 A
www.onsemi.com
Features
PIN CONNECTIONS
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
1
3
2, 4
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
4
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TO−220AB
CASE 221A
STYLE 6
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
1
2
3
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AY WW
TSV3080CG
AKA
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
A
Y
= Assembly Location
= Year
WW
AKA
G
= Work Week
= Polarity Designator
= Pb−Free Package/Halide Free
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 1
NTSV3080CT/D
NTSV3080CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
80
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 115°C)
Per device
Per diode
30
15
R
C
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz, T = 110°C)
Per device
Per diode
60
30
R
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
100
FSM
Operating Junction Temperature
T
−40 to +150
−40 to +150
10,000
°C
°C
J
Storage Temperature
T
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
R
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
R
2.0
70
°C/W
°C/W
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
v
V
F
(I = 5 A, T = 25°C)
0.509
0.575
0.751
−
−
1.05
F
J
(I = 7.5 A, T = 25°C)
F
J
(I = 15 A, T = 25°C)
F
J
(I = 5 A, T = 125°C)
0.471
0.539
0.662
−
−
0.82
F
J
(I = 7.5 A, T = 125°C)
F
J
(I = 15 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T = 25°C)
I
R
30
20
700
35
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
Package
Shipping
NTSV3080CTG
TO−220AB
(Pb−Free/Halide Free)
50 Units / Rail
www.onsemi.com
2
NTSV3080CT
TYPICAL CHARACTERISTICS
100
10
100
T = 150°C
A
T = 150°C
A
10
1
T = 25°C
A
T = 125°C
A
T = 125°C
A
0.1
1
0.01
T = 25°C
A
0.1
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
20
30
40
50
60
70
80
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
10,000
1000
30
25
20
15
10
R
= 1.3°C/W
T = 25°C
J
q
JC
dc
Square Wave
100
10
5
0
0.1
1
10
100
0
20
40
60
80
100
120
140
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 3. Typical Junction Capacitance
Figure 4. Current Derating per Leg
60
55
50
45
40
35
30
25
20
15
10
30
25
20
15
10
I
/I
20
=
I
/I = 10
I
/I = 5
PK AV
PK AV
PK AV
R
= 1.3°C/W
q
JC
dc
Square Wave
dc
Square Wave
5
0
T = 150°C
5
0
J
0
20
40
60
80
100
120
140
0
2
4
6
8
10 12 14 16 18 20
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
www.onsemi.com
3
NTSV3080CT
TYPICAL CHARACTERISTICS
10
1
50%
20%
10%
5%
P
(pk)
0.1
t
1
2%
t
2
DUTY CYCLE, D = t /t
1 2
1%
Single Pulse
0.0001
0.01
0.000001 0.00001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 7. Typical Transient Thermal Response
www.onsemi.com
4
NTSV3080CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
S
B
F
T
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080
2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
ON Semiconductor and the
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NTSV3080CT/D
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