NTTD1P02R2_06 [ONSEMI]
Power MOSFET -1.45 Amps, -20 Volts; 功率MOSFET -1.45安培，伏特-20
| 型号： | NTTD1P02R2_06 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -1.45 Amps, -20 Volts |
| 文件： | 总6页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTD1P02R2
Power MOSFET
−1.45 Amps, −20 Volts
P−Channel Enhancement Mode
Dual Micro8t Package
http://onsemi.com
Features
−1.45 AMPERES
−20 VOLTS
160 mW @ VGS = −4.5
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
• Pb−Free Package is Available
Dual P−Channel
D
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM &
Rating
Symbol
Value
Unit
PIN ASSIGNMENT
D1 D1 D2 D2
Drain−to−Source Voltage
V
DSS
−20
V
V
8
Gate−to−Source Voltage − Continuous
V
GS
"8.0
8
Thermal Resistance −
Junction−to−Ambient (Note 1)
R
250
0.50
−1.45
−1.15
−10
°C/W
W
q
P
D
D
D
JA
WW
1
Total Power Dissipation @ T = 25°C
A
BCG
Continuous Drain Current @ T = 25°C
I
A
A
A
Micro8
G
Continuous Drain Current @ T = 70°C
I
A
CASE 846A
STYLE 2
Pulsed Drain Current (Note 3)
I
A
DM
1
Thermal Resistance −
S1 G1 S2 G2
Junction−to−Ambient (Note 2)
R
125
1.0
−2.04
−1.64
−16
°C/W
W
q
JA
Total Power Dissipation @ T = 25°C
P
D
A
BC
WW
G
= Specific Device Code
= Work Week
= Pb−Free Package
Continuous Drain Current @ T = 25°C
I
I
A
A
A
D
D
Continuous Drain Current @ T = 70°C
A
Pulsed Drain Current (Note 3)
I
A
DM
Operating and Storage
Temperature Range
T , T
−55 to
+150
°C
(Note: Microdot may be in either location)
J
stg
ORDERING INFORMATION
Single Pulse Drain−to−Source Avalanche
EAS
35
mJ
Energy − Starting T = 25°C
J
(V = −20 Vdc, V = −4.5 Vdc,
DD
GS
†
Device
Package
Shipping
Peak I = −3.5 Apk, L = 5.6 mH,
L
R
= 25 W)
G
NTTD1P02R2
Micro8
4000/Tape & Reel
4000/Tape & Reel
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°C
NTTD1P02R2G
Micro8
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR−4 or G−10 PCB, Steady State.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Mounted onto a 2” square FR−4 Board
(1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 2
NTTD1P02R2/D
NTTD1P02R2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V = 0 Vdc, I = −250 mAdc)
V
Vdc
(BR)DSS
−20
−
−
−
GS
D
Temperature Coefficient (Positive)
−
−12
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = 0 Vdc, V = −20 Vdc, T = 25°C)
−
−
−
−
−1.0
−10
GS
DS
J
(V = 0 Vdc, V = −20 Vdc, T = 125°C)
GS
DS
J
Gate−Body Leakage Current
(V = −8 Vdc, V = 0 Vdc)
I
I
nAdc
nAdc
GSS
−
−
−
−
−100
GS
DS
Gate−Body Leakage Current
(V = +8 Vdc, V = 0 Vdc)
GSS
100
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
Vdc
(V = V , I = −250 mAdc)
−0.7
−
−0.95
2.3
−1.4
−
DS
GS
D
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
R
W
DS(on)
(V = −4.5 Vdc, I = −1.45 Adc)
−
−
−
0.130
0.175
0.190
0.160
0.250
−
GS
D
(V = −2.7 Vdc, I = −0.7 Adc)
GS
D
(V = −2.5 Vdc, I = −0.7 Adc)
GS
D
Forward Transconductance (V = −10 Vdc, I = −0.7 Adc)
g
FS
−
2.5
−
Mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
−
−
−
265
100
60
−
−
−
iss
(V = −16 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Notes 5 & 6)
Turn−On Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
10
25
30
25
10
20
30
20
5.0
1.5
2.0
−
−
ns
ns
d(on)
Rise Time
t
r
(V = −16 Vdc, I = −1.45 Adc,
DD
D
V
= −4.5 Vdc, R = 6.0 W)
GS
G
Turn−Off Delay Time
Fall Time
t
t
t
−
d(off)
t
f
−
Turn−On Delay Time
Rise Time
−
d(on)
t
r
−
(V = −16 Vdc, I = −0.7 Adc,
GS
DD
D
V
= −4.5 Vdc, R = 6.0 W)
G
Turn−Off Delay Time
Fall Time
−
d(off)
t
f
−
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Q
10
−
nC
tot
gs
gd
(V = −16 Vdc,
DS
GS
D
V
= −4.5 Vdc,
Q
Q
I
= −1.45 Adc)
−
BODY−DRAIN DIODE RATINGS (Note 5)
Diode Forward On−Voltage
(I = −1.45 Adc, V = 0 Vdc)
V
−
−
−0.91
−0.72
−1.1
Vdc
ns
S
GS
SD
(I = −1.45 Adc, V = 0 Vdc,
−
S
GS
T = 125°C)
J
Reverse Recovery Time
t
−
−
−
−
25
13
−
−
−
−
rr
(I = −1.45 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms)
S
t
12
b
Reverse Recovery Stored Charge
Q
0.015
mC
RR
4. Handling precautions to protect against electrostatic discharge are mandatory.
5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
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2
NTTD1P02R2
3
2
3
−2.7 V
−2.9 V
−3.1 V
−3.3 V
−3.7 V
−4.5 V
−2.5 V
V
DS
≥ −10 V
−2.3 V
T = 25°C
J
−2.1 V
2
−8 V
−1.9 V
−1.7 V
T = −55°C
J
1
0
1
0
T = 100°C
T = 25°C
J
J
V
= −1.5 V
GS
0
0.25
0.5
0.75
1
1.25
1.5
1.75
0
0.5
1
1.5
2
2.5
3
3.5
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.4
0.3
0.2
T = 25°C
J
I
= −1.45 A
D
0.3
0.2
0.1
0
V
GS
= −2.5 V
T = 25°C
J
V
V
= −2.7 V
= −4.5 V
GS
GS
0.1
0
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
3
3.5
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I DRAIN CURRENT (AMPS)
D,
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.4
1.2
1
100
10
1
V
GS
= 0 V
I
V
= −1.45 A
D
= −4.5 V
GS
T = 125°C
J
T = 100°C
J
0.8
0.6
−50 −25
0
25
50
75
100
125 150
4
8
12
16
20
T
J,
JUNCTION TEMPERATURE (°C)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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3
NTTD1P02R2
800
5
20
18
16
14
12
10
8
QT
Q2
V
= 0 V
V
GS
= 0 V
DS
C
iss
T = 25°C
J
4
3
2
600
400
C
rss
−V
GS
Q1
C
C
iss
6
200
0
I
D
= −1.45 A
1
0
−V
DS
4
T = 25°C
J
oss
rss
2
0
C
0
1
2
3
4
5
6
10
5
0
5
10
15
20
−V
GS
−V
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100
V
= −16 V
V
= 0 V
DD
GS
1.6
1.2
0.8
I
= −1.45 A
D
T = 25°C
J
V
GS
= −4.5 V
t
r
t
d (off)
10
t
f
t
d (on)
0.4
0
1
10
100
1
0.4
0.5
0.6
0.7
0.8
0.9
1
R
GATE RESISTANCE (OHMS)
−V
SD,
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage
versus Current
100
V
GS
= 8 V
SINGLE PULSE
di/dt
T
C
= 25°C
I
S
10
1
100 ms
t
rr
1 ms
t
a
t
b
TIME
10 ms
0.25 I
t
p
S
0.1
I
S
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
dc
0.01
0.1
1
10
100
Figure 12. Diode Reverse Recovery Waveform
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTTD1P02R2
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
D = 0.5
0.2
0.1
0.05
P
(pk)
R
(t) = r(t) R
q
JC
0.02
0.01
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
1
t
1
READ TIME AT t
1
t
2
T
− T = P
C
R (t)
q
JC
J(pk)
(pk)
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.1
1.0E−05 1.0E−04
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 13. Thermal Response
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5
NTTD1P02R2
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
D
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
H
E
E
MILLIMETERS
INCHES
NOM
−−
0.003
0.013
0.007
0.118
DIM
A
A1
b
c
D
MIN
−−
0.05
0.25
0.13
2.90
2.90
NOM
−−
MAX
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
PIN 1 ID
1.10
0.15
0.40
0.23
3.10
3.10
e
0.08
b 8 PL
0.33
M
S
S
0.08 (0.003)
T B
A
0.18
3.00
E
3.00
0.118
e
L
0.65 BSC
0.55
4.90
0.026 BSC
0.021
0.193
0.40
4.75
0.70
5.05
0.016
0.187
0.028
0.199
SEATING
PLANE
H
STYLE 2:
−T−
E
A
0.038 (0.0015)
PIN 1. SOURCE 1
2. GATE 1
L
3. SOURCE 2
4. GATE 2
A1
c
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
SOLDERING FOOTPRINT*
1.04
0.38
8X
8X 0.041
0.015
3.20
4.24
5.28
0.126
0.167 0.208
0.65
6X0.0256
SCALE 8:1
mm
inches
ǒ
Ǔ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Micro8 is a registered trademark of International Rectifier Corporation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTTD1P02R2/D
相关型号：
NTTD4401FR2G
2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8
ROCHESTER
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