NTTFD018N08LC [ONSEMI]
MOSFET, Power, 80V POWERTRENCH® Power Clip Half Bridge Configuration;
| 型号： | NTTFD018N08LC |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power, 80V POWERTRENCH® Power Clip Half Bridge Configuration |
| 文件： | 总9页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Symmetrical
Dual N-Channel
80 V, 18 mW, 26 A
NTTFD018N08LC
General Description
This device includes two specialized N−Channel MOSFETs in
a dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q2) and synchronous (Q1) have been designed
to provide optimal power efficiency.
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V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
18 mW @ 10 V
29 mW @ 4.5 V
80 V
26 A
Features
Q1: N−Channel
• Max r
• Max r
= 18 mW at V = 10 V, I = 7.8 A
GS D
DS(on)
ELECTRICAL CONNECTION
= 29 mW at V = 4.5, I = 6.2 A
DS(on)
GS
D
GND
LSG
V+
SW GND
GND
SW
SW
Q2: N−Channel
SW
SW
LSG
V+
• Max r
= 18 mW at V = 10 V, I = 7.8 A
GS D
DS(on)
SW
• Max r
= 29 mW at V = 4.5, I = 6.2 A
V+
DS(on)
GS
D
V+
HSG V+
HSG
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses
Dual N-Channel MOSFET
PIN1
• RoHS Compliant
Typical Applications
• 48 V Input Primary Half Bridge
• Communications
• General Purpose Point of Load
PIN1
Bottom
Top
PIN DESCRIPTION
Power Clip 33 Symmetric
(WQFN12)
Pin
1, 11, 12
Name
GND (LSS)
LSG
Description
Low Side Source
CASE 510CJ
Low Side Gate
2
MARKING DIAGRAM
High Side Drain
3, 4, 5, 6
7
V + (HSD)
HSG
High Side Gate
D018
AYWWZZ
Switching Node, Low Side Drain
8, 9, 10
SW
D018 = Specific Device Code
A
Y
= Assembly Plant Code
= Numeric Year Code
WW = Work Week Code
ZZ = Assembly Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2021 − Rev. 4
NTTFD018N08LC/D
NTTFD018N08LC
ORDERING INFORMATION AND PACKAGE MARKING
†
Device
Marking
Package
Shipping
NTTFD018N08LC
D018
WQFN12
(Pb−Free)
3000 Units/
Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
Symbol
Parameter
Q1
Q2
Units
80
80
V
V
V
I
Drain to Source Voltage
Gate to Source Voltage
DS
GS
20
20
V
A
26
26
Drain Current
−Continuous
T
T
= 25°C
(Note 4)
(Note 4)
D
C
C
16
6 (Note 1a)
349
16
6 (Note 1b)
349
−Continuous
−Continuous
−Pulsed
= 100°C
T = 25°C
A
T = 25°C
A
32
32
mJ
W
E
P
Single Pulse Avalanche Energy (L = 1 mH, I
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Source Current (Body Diode)
= 8 A)
(Note 3)
AS
L(pk)
26
26
T
= 25°C
D
C
1.7 (Note 1a) 1.7 (Note 1b)
T = 25°C
A
21
21
A
I
S
−55 to +150
°C
°C
T , T
Operating and Storage Junction Temperature Range
J
STG
260
260
T
L
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Q1
Q2
Units
4.8
4.8
°C/W
R
R
R
q
JC
JA
JA
70 (Note 1a)
70 (Note 1b)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
q
q
135 (Note 1c) 135 (Note 1c)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
V
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
80
80
I
I
I
I
= 250 mA, V
= 0 V
= 0 V
DSS
D
D
D
D
GS
= 250 mA, V
GS
Breakdown Voltage Temperature
Coefficient
76.81
76.81
mV/°C
mA
= 250 mA, referenced to 25°C
= 250 mA, referenced to 25°C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
V
V
V
V
= 64 V, V
= 0 V
= 0 V
= 0 V
= 0 V
1
DSS
DS
DS
GS
GS
GS
GS
= 64 V, V
1
I
Gate to Source Leakage Current,
Forward
=
=
20 V, V
100
100
mA
GSS
DS
DS
20 V, V
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2
NTTFD018N08LC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
V
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
Q1
Q2
Q1
Q2
Q1
1.0
1.0
1.5
1.5
2.5
2.5
V
V
I
= V , I = 44 mA
GS
DS
D
= V , I = 44 mA
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
−5.71
−5.71
15
mV/°C
mW
= 44 mA, referenced to 25°C
= 44 mA, referenced to 25°C
DVGS(th)
DTJ
D
I
D
r
Drain to Source On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 7.8 A
18
29
DS(on)
D
= 4.5 V, I = 6.2 A
22
D
= 10 V, I = 7.8 A,
25
D
T = 125°C
J
r
Drain to Source On Resistance
V
V
V
= 10 V, I = 7.8 A
Q2
15
22
25
18
29
mW
DS(on)
GS
GS
GS
D
= 4.5 V, I = 6.2 A
D
= 10 V, I = 7.8 A,
D
T = 125°C
J
Q1
Q2
23
23
g
FS
V
= 5 V, I = 7.8 A
S
Forward Transconductance
DS
D
V
= 5 V, I = 7.8 A
D
DS
DYNAMIC CHARACTERISTICS
Q1:
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
856
856
230
230
10
pF
pF
pF
W
C
C
C
R
Input Capacitance
ISS
OSS
RSS
G
V
DS
= 40 V, V = 0 V, f = 1 Mhz
GS
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q2:
V
DS
= 40 V, V = 0 V, f = 1 MHz
GS
10
T = 25°C
A
0.5
0.5
SWITCHING CHARACTERISTICS
td
Turn*On Delay Time
Q1:
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
9.4
9.4
ns
ns
ns
ns
nC
(ON)
V
= 40 V, V = 4.5 V,
GS
DD
D
I
= 6.2 A, R
= 6 W
GEN
t
t
t
Rise Time
5.8
r
Q2:
5.8
V
D
= 40 V, V = 4.5 V,
GS
DD
I
= 6.2 A, R
= 6 W
GEN
Turn*Off Delay Time
Fall Time
14.6
14.6
5.5
D(OFF)
f
5.5
Q
Q
Q
Q
Total Gate Charge
V
V
= 0V to 10 V
12.4
12.4
6.0
g
GS
= 0V to 4.5 V
Total Gate Charge
nC
nC
nC
GS
g
6.0
Q1:
V
D
= 40 V,
= 40 V,
DD
Gate to Source Gate Charge
Gate to Drain ”Miller” Charge
1.94
1.94
1.71
1.71
gs
gd
I
= 6.2 A
Q2:
V
D
DD
I
= 6.2 A
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3
NTTFD018N08LC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max.
Units
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
Q2
0.82
0.82
1.5
1.5
V
t
V
V
= 0 V, I = 7.8 A
(Note 2)
(Note 2)
Source to Drain Diode Forward Voltage
V
SD
GS
S
= 0 V, I = 7.8 A
GS
S
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
13.3
13.3
18.1
18.1
10.3
10.3
51
Q1:
ns
nC
ns
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
rr
I = 7.8 A, di/dt = 300 A/ms
F
Q2:
Q
t
rr
I = 7.8 A, di/dt = 300 A/ms
F
Q1:
rr
I = 7.8 A, di/dt = 1000 A/ms
F
Q2:
Q
nC
rr
I = 7.8 A, di/dt = 1000 A/ms
F
51
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 70°C/W when mounted on
b) 70°C/W when mounted on
2
2
a 1 in pad of 2 oz copper.
a 1 in pad of 2 oz copper.
c) 135°C/W when mounted on
d) 135°C/W when mounted on
a minimum pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Q1: E of 32 mJ is based on starting T = 25_C; N−ch: L = 1 mH, I = 8 A, V = 80 V, V = 10 V. 100% test at L = 1 mH, I = 8.2 A.
AS
J
AS
DD
GS
AS
Q2: E of 32 mJ is based on starting T = 25_C; N−ch: L = 1 mH, I = 8 A, V = 80 V, V = 10 V. 100% test at L = 1 mH, I = 8.2 A.
AS
J
AS
DD
GS
AS
4. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal
& electro−mechanical application board design.
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4
NTTFD018N08LC
TYPICAL CHARACTERISTICS
40
40
35
V
DS
= 5 V
3.5 V
3.0 V
35
30
25
20
15
10
V
GS
= 10 V to 4 V
30
25
20
15
10
T = 25°C
J
2.5 V
4.5
5
0
5
0
T = 150°C
J
T = −55°C
J
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
35
30
25
20
180
160
140
120
100
80
T = 25°C
D
T = 25°C
J
J
I
= 7.8 A
V
= 4.5 V
= 10 V
GS
V
GS
60
15
10
5
40
20
0
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
100K
10K
1K
V
= 10 V
=7.8 A
GS
1.8
I
D
T = 150°C
J
1.6
1.4
1.2
1.0
0.8
0.6
T = 125°C
J
100
T = 85°C
J
10
1
−50
−25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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5
NTTFD018N08LC
TYPICAL CHARACTERISTICS
10K
1K
10
9
Q
G(TOT)
8
7
6
5
4
3
2
C
ISS
C
OSS
100
Q
Q
GD
GS
10
1
C
RSS
V
= 0 V
V
I
= 40 V
= 6.2 A
GS
DS
T = 25°C
J
D
1
0
f = 1 MHz
T = 25°C
J
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
100
V
V
= 4.5 V
= 40 V
GS
V
GS
= 0 V
DS
I
D
= 6.2 A
t
d(off)
1
10
t
d(on)
t
r
t
f
T = 150°C
T = 25°C T = −55°C
J J
J
1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10 ms
100 ms
25°C
10
V
GS
≤ 10 V
Single Pulse
T = 25°C
1
125°C
A
1 ms
10 ms
100 ms
1 s
R
= 135°C/W
q
JA
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.01
1
0.000001 0.00001
0.1
1
10
100
0.0001
T , TIME IN AVALANCHE (s)
AV
0.001
0.01
0.1
V
DS
, DRAIN−SOURCE VOLTAGE(V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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NTTFD018N08LC
TYPICAL CHARACTERISTICS
1000
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WQFN12 3.3X3.3, 0.65P
CASE 510CJ
ISSUE A
DATE 08 AUG 2022
GENERIC
MARKING DIAGRAM*
XXXX
AYWW
G
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13806G
WQFN12 3.3X3.3, 0.65P
PAGE 1 OF 1
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